FMBS549
FMBS549
NC
C
E
Package: SuperSOT-6 single
Mark : .S1
B
C
C
Pin 1
PNP Low Saturation Transistor
ThIs device is designed with high current gain and low saturation voltage with collector currents up to
2A continous. Sourced from process PB.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J,
T
STG
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
T
A
= 25°C unless otherwise noted
Value
30
35
5
1
2
-55 to +150
Units
V
V
V
A
A
°C
Collector Current- Continuous
- Peak Pulse Current
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJA
T
A
= 25°C unless otherwise noted
Characteristics
Total Device Dissipation*
Thermal Resistance, Junction to Ambient, total
*
Device mounted on a 1 in2
pad of 2 oz copper.
Max
700
180
Units
mW
°C/W
©
1999 Fairchild Semiconductor
fmbs549.lwp Rev A PrPB
FMBS549
PNP Low Saturation transistor
(continued)
Electrical Characteristics
Symbol
Parameter
T
A
= 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
Collector to Emitter Voltage
Collector to Base Voltage
Emitter to Base Voltage
Collector Cutoff Current
Emitter Cutoff Current
Ic = 10 mA
Ic = 100 uA
Ie = 100 uA
Vcb = 30 V
Vcb = 30 V, Ta= 100C
Veb = 4 V
30
35
5
100
10
100
V
V
V
nA
uA
nA
ON CHARACTERISTICS
h
FE
DC Current Gain
Vce =
Vce =
Vce =
Vce =
Vce =
2V,
2V,
2V,
2V,
0.8V,
Ic =
Ic =
Ic =
Ic =
Ic =
50 mA
500 mA
1A
2A
500 m A
70
100
80
40
100
-
300
V
CE(sat)
Collector-Emitter Saturation Voltage
Ic = 250 mA,
Ic = 500 mA,
Ic = 1 A,
Ic = 2 A,
Ib = 25 mA
Ib = 50 mA
Ib = 100 mA
Ib = 200 mA
200
350
500
750
1.25
1
mV
mV
mV
mV
V
V
V
BE(sat)
V
BE(on)
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Ic = 1 A, Ib = 100 mA
Ic = 1 A, Vce = 2 V
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
f
T
Current Gain - Bandwidth Product
Vcb = 10V, f = 1MHz
Vce = 5 V, Ic = 100mA, f = 100MHz
100
25
pF
MHz
©
1999 Fairchild Semiconductor
fmbs549.lwp Rev A PrPB
SuperSOT
TM
-6 Tape and Reel Data and Package Dimensions
SSOT-6 Packaging
Configuration:
Figur e 1.0
Packaging Description:
Customize Label
Anti static Cover Tape
SSOT-6 parts are shipped in tape. The carrier tape is
made from a dissipative (carbon filled) polycarbonate
resin. The cover tape is a multilayer film (Heat Activated
Adhesive in nature) primarily composed of polyester film,
adhesive layer, sealant, and anti-static sprayed agent.
These reeled parts in standard option are shipped with
3,000 units per 7" or 177cm diameter reel. The reels are
dark blue in color and is made of polystyrene plastic (anti-
static coated). Other option comes in 10,000 units per 13"
or 330cm diameter reel. This and some other options are
described in the Packaging Information table.
These full reels are individually barcode labeled and
placed inside a pizza box (illustrated in figure 1.0) made of
recyclable corrugated brown paper with a Fairchild logo
printing. One pizza box contains three reels maximum.
And these pizza boxes are placed inside a barcode
labeled shipping box which comes in different sizes
depending on the number of parts shipped.
F63TNR
Label
Embossed
Carrier Tape
631
631
SSOT-6 Packaging Information
Packaging Option
Packaging type
Qty per Reel/Tube/Bag
Reel Size
Box Dimension (mm)
Max qty per Box
Weight per unit (gm)
Weight per Reel (kg)
Note/Comments
Standard
(no f l ow c ode )
631
631
631
Pin 1
D87Z
TNR
10,000
13"
343x343x64
30,000
0.0158
0.4700
TNR
3,000
7" Dia
184x187x47
9,000
0.0158
0.1440
SSOT-6 Unit Orientation
343mm x 342mm x 64mm
Intermediate box fo r D87Z Option
F63TNR Label
F63TNR
Label
F63TNR Label sa mpl e
184mm x 187mm x 47mm
Pizza Box fo r Standar d Opti on
F63TNR
Label
LOT: CBVK741B019
FSID: FDC633N
QTY: 3000
SPEC:
SSOT-6 Tape Leader and Trailer
Configuration:
Figur e 2.0
D/C1: D9842
D/C2:
QTY1:
QTY2:
SPEC REV:
CPN:
N/F: F
(F63TNR)3
Carrier Tape
Cover Tape
Comp onent s
Traile r Tape
300mm mi nimum or
75 empty poc kets
Lead er Tape
500mm mi nimum or
125 emp ty poc kets
1998 Fairchild Semiconductor Corporation
August 1999, Rev. C
SuperSOT
TM
-6 Tape and Reel Data and Package Dimensions, continued
SSOT-6 Embossed Carrier Tape
Configuration:
Figure 3.0
T
E1
P0
D0
F
K0
Wc
B0
E2
W
Tc
A0
P1
D1
User Direction of Feed
Dimensions are in millimeter
Pkg type
SSOT-6
(8mm)
A0
3.23
+/-0.10
B0
3.18
+/-0.10
W
8.0
+/-0.3
D0
1.55
+/-0.05
D1
1.125
+/-0.125
E1
1.75
+/-0.10
E2
6.25
min
F
3.50
+/-0.05
P1
4.0
+/-0.1
P0
4.0
+/-0.1
K0
1.37
+/-0.10
T
0.255
+/-0.150
Wc
5.2
+/-0.3
Tc
0.06
+/-0.02
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
rotational and lateral movement requirements (see sketches A, B, and C).
20 deg maximum
Typical
component
cavity
center line
0.5mm
maximum
B0
20 deg maximum component rotation
0.5mm
maximum
Sketch A (Side or Front Sectional View)
Component Rotation
A0
Sketch B (Top View)
Typical
component
center line
Sketch C (Top View)
Component lateral movement
SSOT-6 Reel Configuration:
Figure 4.0
Component Rotation
W1 Measured at Hub
Dim A
Max
Dim A
max
Dim N
See detail AA
7" Diameter Option
B Min
Dim C
See detail AA
W3
Dim D
min
13" Diameter Option
W2 max Measured at Hub
DETAIL AA
Dimensions are in inches and millimeters
Tape Size
8mm
Reel
Option
7" Dia
Dim A
7.00
177.8
13.00
330
Dim B
0.059
1.5
0.059
1.5
Dim C
512 +0.020/-0.008
13 +0.5/-0.2
512 +0.020/-0.008
13 +0.5/-0.2
Dim D
0.795
20.2
0.795
20.2
Dim N
2.165
55
4.00
100
Dim W1
0.331 +0.059/-0.000
8.4 +1.5/0
0.331 +0.059/-0.000
8.4 +1.5/0
Dim W2
0.567
14.4
0.567
14.4
Dim W3 (LSL-USL)
0.311 – 0.429
7.9 – 10.9
0.311 – 0.429
7.9 – 10.9
8mm
13" Dia
July 1999, Rev. C
SuperSOT
TM
-6 Tape and Reel Data and Package Dimensions, continued
SuperSOT -6 (FS PKG Code 31, 33)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.0158
1998 Fairchild Semiconductor Corporation
September 1998, Rev. A