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HN58X2532NI: 产品描述4KX8 SPI BUS SERIAL EEPROM, PDSO8, PLASTIC, SON-8; 产品类别存储存储; 文件大小257KB，共32页; 制造商Renesas(瑞萨电子); 官网地址https://www.renesas.com/

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HN58X2532NI概述

4KX8 SPI BUS SERIAL EEPROM, PDSO8, PLASTIC, SON-8

HN58X2532NI规格参数

参数名称	属性值
是否Rohs认证	不符合
厂商名称	Renesas(瑞萨电子)
零件包装代码	SON
包装说明	VSON, FL8,.15,25
针数	8
Reach Compliance Code	unknown
ECCN代码	EAR99
最大时钟频率 (fCLK)	3 MHz
数据保留时间-最小值	10
耐久性	100000 Write/Erase Cycles
JESD-30 代码	R-PDSO-N8
JESD-609代码	e0
长度	3.6 mm
内存密度	32768 bit
内存集成电路类型	EEPROM
内存宽度	8
功能数量	1
端子数量	8
字数	4096 words
字数代码	4000
工作模式	SYNCHRONOUS
最高工作温度	85 °C
最低工作温度	-40 °C
组织	4KX8
封装主体材料	PLASTIC/EPOXY
封装代码	VSON
封装等效代码	FL8,.15,25
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE, VERY THIN PROFILE
并行/串行	SERIAL
峰值回流温度（摄氏度）	NOT SPECIFIED
电源	2/5 V
认证状态	Not Qualified
座面最大高度	0.8 mm
串行总线类型	SPI
最大待机电流	0.000003 A
最大压摆率	0.0035 mA
最大供电电压 (Vsup)	5.5 V
最小供电电压 (Vsup)	1.8 V
标称供电电压 (Vsup)	2.5 V
表面贴装	YES
技术	CMOS
温度等级	INDUSTRIAL
端子面层	Tin/Lead (Sn/Pb)
端子形式	NO LEAD
端子节距	0.65 mm
端子位置	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED
宽度	3 mm
最长写入周期时间 (tWC)	8 ms
写保护	HARDWARE/SOFTWARE

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To all our customers

Regarding the change of names mentioned in the document, such as Hitachi

Electric and Hitachi XX, to Renesas Technology Corp.

The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas

Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)

Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand

names are mentioned in the document, these names have in fact all been changed to Renesas

Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and

corporate statement, no changes whatsoever have been made to the contents of the document, and

these changes do not constitute any alteration to the contents of the document itself.

Renesas Technology Home Page: http://www.renesas.com

Renesas Technology Corp.

Customer Support Dept.

April 1, 2003

Cautions

Keep safety first in your circuit designs!

1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better

and more reliable, but there is always the possibility that trouble may occur with them. Trouble with

semiconductors may lead to personal injury, fire or property damage.

Remember to give due consideration to safety when making your circuit designs, with appropriate

measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or

(iii) prevention against any malfunction or mishap.

Notes regarding these materials

1. These materials are intended as a reference to assist our customers in the selection of the Renesas

Technology Corporation product best suited to the customer's application; they do not convey any

license under any intellectual property rights, or any other rights, belonging to Renesas Technology

Corporation or a third party.

2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any

third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or

circuit application examples contained in these materials.

3. All information contained in these materials, including product data, diagrams, charts, programs and

algorithms represents information on products at the time of publication of these materials, and are

subject to change by Renesas Technology Corporation without notice due to product improvements or

other reasons. It is therefore recommended that customers contact Renesas Technology Corporation

or an authorized Renesas Technology Corporation product distributor for the latest product information

before purchasing a product listed herein.

The information described here may contain technical inaccuracies or typographical errors.

Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss

rising from these inaccuracies or errors.

Please also pay attention to information published by Renesas Technology Corporation by various

means, including the Renesas Technology Corporation Semiconductor home page

(http://www.renesas.com).

4. When using any or all of the information contained in these materials, including product data, diagrams,

charts, programs, and algorithms, please be sure to evaluate all information as a total system before

making a final decision on the applicability of the information and products. Renesas Technology

Corporation assumes no responsibility for any damage, liability or other loss resulting from the

information contained herein.

5. Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device

or system that is used under circumstances in which human life is potentially at stake. Please contact

Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor

when considering the use of a product contained herein for any specific purposes, such as apparatus or

systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.

6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in

whole or in part these materials.

7. If these products or technologies are subject to the Japanese export control restrictions, they must be

exported under a license from the Japanese government and cannot be imported into a country other

than the approved destination.

Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the

country of destination is prohibited.

8. Please contact Renesas Technology Corporation for further details on these materials or the products

contained therein.

HN58X2532NI相似产品对比

	HN58X2532NI	HN58X2532FPI	HN58X2532TI	HN58X2564FPI	HN58X2564NI	HN58X2564TI
描述	4KX8 SPI BUS SERIAL EEPROM, PDSO8, PLASTIC, SON-8	4KX8 SPI BUS SERIAL EEPROM, PDSO8, 0.150 INCH, PLASTIC, SOP-8	4KX8 SPI BUS SERIAL EEPROM, PDSO8, PLASTIC, TSSOP-8	8KX8 SPI BUS SERIAL EEPROM, PDSO8, 0.150 INCH, PLASTIC, SOP-8	8KX8 SPI BUS SERIAL EEPROM, PDSO8, PLASTIC, SON-8	8KX8 SPI BUS SERIAL EEPROM, PDSO8, PLASTIC, TSSOP-8
是否Rohs认证	不符合	不符合	不符合	不符合	不符合	不符合
厂商名称	Renesas(瑞萨电子)	Renesas(瑞萨电子)	Renesas(瑞萨电子)	Renesas(瑞萨电子)	Renesas(瑞萨电子)	Renesas(瑞萨电子)
零件包装代码	SON	SOIC	SOIC	SOIC	SON	SOIC
包装说明	VSON, FL8,.15,25	0.150 INCH, PLASTIC, SOP-8	PLASTIC, TSSOP-8	0.150 INCH, PLASTIC, SOP-8	VSON, FL8,.15,25	PLASTIC, TSSOP-8
针数	8	8	8	8	8	8
Reach Compliance Code	unknown	compliant	compliant	compliant	unknown	compliant
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
最大时钟频率 (fCLK)	3 MHz	3 MHz	3 MHz	3 MHz	3 MHz	3 MHz
数据保留时间-最小值	10	10	10	10	10	10
耐久性	100000 Write/Erase Cycles	100000 Write/Erase Cycles	100000 Write/Erase Cycles	100000 Write/Erase Cycles	100000 Write/Erase Cycles	100000 Write/Erase Cycles
JESD-30 代码	R-PDSO-N8	R-PDSO-G8	R-PDSO-G8	R-PDSO-G8	R-PDSO-N8	R-PDSO-G8
JESD-609代码	e0	e0	e0	e0	e0	e0
长度	3.6 mm	4.89 mm	4.4 mm	4.89 mm	3.6 mm	4.4 mm
内存密度	32768 bit	32768 bit	32768 bit	65536 bit	65536 bit	65536 bit
内存集成电路类型	EEPROM	EEPROM	EEPROM	EEPROM	EEPROM	EEPROM
内存宽度	8	8	8	8	8	8
功能数量	1	1	1	1	1	1
端子数量	8	8	8	8	8	8
字数	4096 words	4096 words	4096 words	8192 words	8192 words	8192 words
字数代码	4000	4000	4000	8000	8000	8000
工作模式	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
最高工作温度	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C
最低工作温度	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C
组织	4KX8	4KX8	4KX8	8KX8	8KX8	8KX8
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	VSON	SOP	TSSOP	SOP	VSON	TSSOP
封装等效代码	FL8,.15,25	SOP8,.25	TSSOP8,.25	SOP8,.25	FL8,.15,25	TSSOP8,.25
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE, VERY THIN PROFILE	SMALL OUTLINE	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	SMALL OUTLINE	SMALL OUTLINE, VERY THIN PROFILE	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
并行/串行	SERIAL	SERIAL	SERIAL	SERIAL	SERIAL	SERIAL
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
电源	2/5 V	2/5 V	2/5 V	2/5 V	2/5 V	2/5 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	0.8 mm	1.73 mm	1.1 mm	1.73 mm	0.8 mm	1.1 mm
串行总线类型	SPI	SPI	SPI	SPI	SPI	SPI
最大待机电流	0.000003 A	0.000003 A	0.000003 A	0.000003 A	0.000003 A	0.000003 A
最大压摆率	0.0035 mA	0.0035 mA	0.0035 mA	0.0035 mA	0.0035 mA	0.0035 mA
最大供电电压 (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
最小供电电压 (Vsup)	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V
标称供电电压 (Vsup)	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V
表面贴装	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
端子面层	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
端子形式	NO LEAD	GULL WING	GULL WING	GULL WING	NO LEAD	GULL WING
端子节距	0.65 mm	1.27 mm	0.65 mm	1.27 mm	0.65 mm	0.65 mm
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
宽度	3 mm	3.9 mm	3 mm	3.9 mm	3 mm	3 mm
最长写入周期时间 (tWC)	8 ms	8 ms	8 ms	8 ms	8 ms	8 ms
写保护	HARDWARE/SOFTWARE	HARDWARE/SOFTWARE	HARDWARE/SOFTWARE	HARDWARE/SOFTWARE	HARDWARE/SOFTWARE	HARDWARE/SOFTWARE
是否无铅	-	含铅	含铅	含铅	-	含铅

HN58X2532NI

HN58X2532NI概述

HN58X2532NI规格参数

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