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HN4C05JU-B

产品描述TRANSISTOR 400 mA, 12 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-2L1A, USV, 5 PIN, BIP General Purpose Small Signal
产品类别分立半导体    晶体管   
文件大小316KB,共4页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
下载文档 详细参数 选型对比 全文预览

HN4C05JU-B概述

TRANSISTOR 400 mA, 12 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-2L1A, USV, 5 PIN, BIP General Purpose Small Signal

HN4C05JU-B规格参数

参数名称属性值
厂商名称Toshiba(东芝)
包装说明SMALL OUTLINE, R-PDSO-G5
针数5
Reach Compliance Codeunknown
ECCN代码EAR99
最大集电极电流 (IC)0.4 A
集电极-发射极最大电压12 V
配置COMMON EMITTER, 2 ELEMENTS
最小直流电流增益 (hFE)500
JESD-30 代码R-PDSO-G5
JESD-609代码e0
元件数量2
端子数量5
最高工作温度125 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
极性/信道类型NPN
认证状态Not Qualified
表面贴装YES
端子面层TIN LEAD
端子形式GULL WING
端子位置DUAL
晶体管应用SWITCHING
晶体管元件材料SILICON
标称过渡频率 (fT)130 MHz

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HN4C05JU
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
HN4C05JU
Low Frequency Amplifier Applications
Muting Applications
Switching Applications
Low Saturation Voltage : VCE(sat)(1)=15mV (Typ.)
:@ I
C
= 10mA/ I
B
= 0.5mA)
High Collector Current : I
C
= 400mA(Max.)
Unit: mm
Absolute Maximum Ratings
(Ta = 25°C) (Q1, Q2 Common)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
*
T
j
Rating
15
12
5
400
50
200
125
Unit
V
V
V
mA
mA
mW
°C
1.BASE1
2.EMITTER
3.BASE2
4.COLLECTOR2
5.COLLECTOR1
(B1)
(E)
(B2)
(C2)
(C1)
JEDEC
JEITA
Storage temperature range
T
stg
−55
to 125
°C
TOSHIBA
2-2L1A
Weight: 0.0062g (Typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Total rating. Power dissipation per element should not exceed 130mW.
Electrical Characteristics
(Ta = 25°C) (Q1, Q2 Common)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
"ON" resistance
Turn on time
Switching time
Storage time
Fall down time
Symbol
I
CBO
I
EBO
h
FE
(Note)
V
CE (sat)(1)
V
CE (sat)(2)
V
BE(sat)
f
T
C
ob
R
on
t
on
t
stg
t
f
D uty cycle
Test Condition
V
CB
=15V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 2V, I
C
= 10mA
I
C
= 10mA, I
B
= 0.5mA
I
C
= 200mA, I
B
= 10mA
V
CE
= 200mA, I
C
= 10mA
V
CE
= 2V, I
C
= 10mA
V
CB
= 10V, I
E
= 0, f = 1MHz
,I
B
= 1mA,V
in
=1V
rms
,f=1kHz
I.P
.
O .P.
Min
300
80
Typ.
15
110
0.87
130
4.2
0.9
85
170
40
Max
0.1
0.1
1000
30
250
1.2
Unit
μA
μA
mV
V
MHz
pF
Ω
ns
(Note) hFE Classifications A:300 to 600, B:500 to 1000
Start of commercial production
1999-11
1
2014-03-01

HN4C05JU-B相似产品对比

HN4C05JU-B HN4C05JU-A
描述 TRANSISTOR 400 mA, 12 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-2L1A, USV, 5 PIN, BIP General Purpose Small Signal TRANSISTOR 400 mA, 12 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-2L1A, USV, 5 PIN, BIP General Purpose Small Signal
厂商名称 Toshiba(东芝) Toshiba(东芝)
包装说明 SMALL OUTLINE, R-PDSO-G5 SMALL OUTLINE, R-PDSO-G5
针数 5 5
Reach Compliance Code unknown unknown
ECCN代码 EAR99 EAR99
最大集电极电流 (IC) 0.4 A 0.4 A
集电极-发射极最大电压 12 V 12 V
配置 COMMON EMITTER, 2 ELEMENTS COMMON EMITTER, 2 ELEMENTS
最小直流电流增益 (hFE) 500 300
JESD-30 代码 R-PDSO-G5 R-PDSO-G5
JESD-609代码 e0 e0
元件数量 2 2
端子数量 5 5
最高工作温度 125 °C 125 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE
极性/信道类型 NPN NPN
认证状态 Not Qualified Not Qualified
表面贴装 YES YES
端子面层 TIN LEAD TIN LEAD
端子形式 GULL WING GULL WING
端子位置 DUAL DUAL
晶体管应用 SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON
标称过渡频率 (fT) 130 MHz 130 MHz

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