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1N4006G

产品描述SILICON, SIGNAL DIODE
产品类别半导体    分立半导体   
文件大小51KB,共2页
制造商CTC [Compact Technology Corp.]
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1N4006G概述

SILICON, SIGNAL DIODE

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Compact Technology
1N4001G thru 1N4007G
REVERSE VOLTAGE
- 50
to
1000
Volts
FORWARD CURRENT
- 1.0
Ampere
GLASS PASSIVATED JUNCTION RECTIFIERS
FEATURES
Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
High temperature metallurgically bonded construction
Glass passivated cavity-free junction
Capable of meeting environmental standards of
MIL-S-19500
1.0 ampere operation at T
A
=75 with no thermal runaway
A
DO-41
B
A
C
D
MECHANICAL DATA
Case : JEDEC DO-41 molded plastic
Polarity : Color band denotes cathode
Weight : 0.012 ounces, 0.34 grams
Mounting position : Any
Dim.
A
B
Min.
25.4
4.20
0.70
2.00
DO-41
Max.
-
5.20
0.90
C
2.70
D
All Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current
SYMBOL
1N4001G 1N4002G 1N4003G 1N4004G1N4005G1N4006G 1N4007G
UNIT
V
RRM
V
RMS
V
DC
I
(AV)
50
35
50
100
70
100
200
140
200
400
280
400
1.0
600
420
600
800
560
800
1000
700
1000
V
V
V
A
@T
A
=
75 C
Peak Forward Surge Current
8.3ms single half sine-wave
super imposed on rated load (JEDEC Method)
Maximum forward Voltage at 1.0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Junction
Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
Operating Temperature Range
Storage Temperature Range
I
FSM
V
F
I
R
C
J
R
0JA
30
1.1
5
50
10
55
-55 to +150
-55 to +150
A
V
uA
@T
J
=25 C
@T
J
=100 C
pF
C/W
T
J
T
STG
C
C
NOTES : 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Thermal Resistance Junction to Ambient.
3.Thermal Resistance Junction to Case at 9.5mm Lead Length.PCB Mounted JEDEC Registered Value.
CTC0166 Ver.
2.0
1
of 2
1N4001G thru 1N4007G

1N4006G相似产品对比

1N4006G 1N4001G 1N4007G 1N4002G 1N4005G 1N4003G
描述 SILICON, SIGNAL DIODE 1 A, 50 V, SILICON, SIGNAL DIODE, DO-204AL 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41 SIGNAL DIODE 1 A, 600 V, SILICON, SIGNAL DIODE, DO-41 SIGNAL DIODE
状态 - ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE
二极管类型 - 信号二极管 信号二极管 SIGNAL DIODE SIGNAL DIODE 信号二极管

 
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