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CMS14(TE12L,Q)

产品描述DIODE SCHOTTKY 60V 2A M-FLAT
产品类别分立半导体    二极管   
文件大小140KB,共5页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
标准
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CMS14(TE12L,Q)概述

DIODE SCHOTTKY 60V 2A M-FLAT

CMS14(TE12L,Q)规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Toshiba(东芝)
Reach Compliance Codeunknown

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CMS14
TOSHIBA Schottky Barrier Diode
CMS14
Switching Mode Power Supply Applications
(Output voltage:
≤12
V)
DC/DC Converter Applications
Forward voltage: V
FM
= 0.58 V (max)
Average forward current: I
F (AV)
= 2.0 A
Repetitive peak reverse voltage: V
RRM
= 60 V
Suitable for compact assembly due to small surface-mount package
“M−FLAT
TM
” (Toshiba package name)
Unit: mm
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Repetitive peak reverse voltage
Average forward current
Non-repetitive peak surge current
Junction temperature
Storage temperature range
Symbol
V
RRM
I
F (AV)
I
FSM
T
j
T
stg
Rating
60
2.0 (Note 1)
40 (50 Hz)
−40~150
−40~150
Unit
V
A
A
°C
°C
Note 1: Tℓ
=
112°C
Device mounted on a ceramic board
Board size: 50 mm
×
50 mm
Soldering size: 2 mm
×
2 mm
Board thickness: 0.64 t
Rectangular waveform (α
=
180°), V
R
=
30 V
JEDEC
JEITA
TOSHIBA
3-4E1A
Weight: 0.023 g (typ.)
Note 2: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Peak forward voltage
Peak repetitive reverse current
Junction capacitance
Symbol
V
FM (1)
V
FM (2)
I
RRM (1)
I
RRM (2)
C
j
Test Condition
I
FM
=
1.0 A (pulse test)
I
FM
=
2.0 A (pulse test)
V
RRM
=
5 V (pulse test)
V
RRM
=
60 V (pulse test)
V
R
=
10 V, f
=
1.0 MHz
Device mounted on a ceramic board
(board size: 50 mm
×
50 mm)
(soldering land: 2 mm
×
2 mm)
(board thickness: 0.64 t)
Thermal resistance
(junction to ambient)
R
th (j-a)
Device mounted on a glass-epoxy board
(board size: 50 mm
×
50 mm)
(soldering land: 6 mm
×
6 mm)
(board thickness: 1.6 t)
Device mounted on a glass-epoxy board
(board size: 50 mm
×
50 mm)
(soldering land: 2.1 mm
×
1.4 mm)
(board thickness: 1.6 t)
Thermal resistance
(junction to lead)
R
th (j-ℓ)
Min
Typ.
0.45
0.53
0.6
25
77
Max
0.58
200
60
Unit
V
μA
pF
135
°C/W
210
16
°C/W
1
2006-11-13
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