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CMF01(TE12L,Q)

产品描述Diode Switching 600V 2A 2-Pin M-FLAT T/R
产品类别分立半导体    二极管   
文件大小171KB,共4页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
标准
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CMF01(TE12L,Q)概述

Diode Switching 600V 2A 2-Pin M-FLAT T/R

CMF01(TE12L,Q)规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Toshiba(东芝)
Reach Compliance Codeunknown

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CMF01
TOSHIBA Fast Recovery Diode
Silicon Diffused Type
CMF01
Switching Mode Power Supply Applications
DC/DC Converter Applications
Repetitive peak reverse voltage: V
RRM
= 600 V
Average forward current: I
F (AV)
= 2.0 A
Forward voltage: V
FM
= 2.0 V (max)
Very fast reverse-recovery time: t
rr
= 100 ns (max.)
Suitable for high-density board assembly due to the use of a small
surface-mount package, M−FLAT
TM
Unit: mm
0.16
Characteristic
Repetitive peak reverse voltage
Average forward current
Peak one-cycle surge forward current
(non-repetitive)
Junction temperature
Storage temperature range
Symbol
V
RRM
I
F (AV)
I
FSM
T
j
T
stg
Rating
600
2.0 (Note 1)
30 (50 Hz)
−40
to 150
−40
to 150
Unit
V
A
A
°C
°C
1.75
±
0.1
+ 0.2
2.4
0.1
0.98
±
0.1
0 ~ 0.1
ANODE
CATHODE
JEDEC
JEITA
TOSHIBA
3-4E1A
Note 1: Tℓ =100°C
Device mounted on a ceramic board
Board size: 50 mm × 50 mm,
Soldering land size: 2 mm × 2 mm
Board thickness: 0.64 mm
Rectangular waveform (α = 180°)
Weight: 0.023 g (typ.)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2008-05-13
0.65
±
0.2
Absolute Maximum Ratings
(Ta
=
25°C)
3.8
±
0.1
4.7
±
0.2
0.65
±
0.2

 
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