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CMF03(T2L

产品描述Rectifier Diode
产品类别分立半导体    二极管   
文件大小453KB,共4页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
下载文档 详细参数 选型对比 全文预览

CMF03(T2L概述

Rectifier Diode

CMF03(T2L规格参数

参数名称属性值
厂商名称Toshiba(东芝)
Reach Compliance Codeunknown
应用FAST RECOVERY
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)2.5 V
JESD-30 代码R-PDSO-F2
最大非重复峰值正向电流10 A
元件数量1
相数1
端子数量2
最高工作温度125 °C
最低工作温度-40 °C
最大输出电流0.5 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
最大重复峰值反向电压900 V
最大反向电流50 µA
最大反向恢复时间0.1 µs
反向测试电压900 V
表面贴装YES
端子形式FLAT
端子位置DUAL

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CMF03
TOSHIBA Fast Recovery Diode Silicon Diffused Type
CMF03
High-Speed Rectification (Fast recovery)
Radio-Frequency Rectification in Switching Regulators
DC-DC Converters
Repetitive peak reverse voltage
Average forward current
Peak forward voltage
Very fast reverse-recovery time
: V
RRM
= 900 V
: I
F (AV)
= 0.5 A
: V
FM
= 2.5 V (max)
: t
rr
= 100 ns (max)
Unit: mm
Suitable for high-density board assembly due to the use of a small
Toshiba Nickname: M−FLAT
TM
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristic
Repetitive peak reverse voltage
Average forward current
Non-repetitive peak forward surge current
Junction temperature
Storage temperature range
Symbol
V
RRM
I
F(AV)
I
FSM
T
j
T
stg
Rating
900
0.5 (Note 1)
10 (50 Hz)
−40
to 125
−40
to 150
Unit
V
A
A
°C
°C
ANODE
CATHODE
JEDEC
JEITA
TOSHIBA
3-4E1S
Note 1: T
=
102°C
Rectangular waveform (α
=
180°)
Weight: 0.023 g (typ.)
Note 2: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta
=
25°C)
Characteristic
Peak forward voltage
Repetitive peak reverse current
Reverse recovery time
Forward recovery time
Symbol
V
FM
I
RRM
t
rr
t
fr
Test Condition
I
FM
=
0.5 A (pulse test)
V
RRM
=
900 V (pulse test)
I
F
= 1 A, di/dt = -30 A/µs
I
F
= 1 A
Device mounted on a ceramic board
board size
50 mm
×
50 mm
soldering land size
2 mm
×
2 mm
board thickness
0.64 mm
Thermal resistance
R
th(j-a)
Device mounted on a glass-epoxy board
board size
50 mm
×
50 mm
soldering land size
6 mm
×
6 mm
board thickness
1.6 mm
Device mounted on a glass-epoxy board
board size
50 mm
×
50 mm
soldering land size
2.1 mm
×
1.4 mm
board thickness
1.6 mm
Thermal resistance (junction to lead)
R
th(j-ℓ)
Min
Typ.
550
Max
2.5
50
100
60
Unit
V
μA
ns
ns
135
°C/W
210
16
°C/W
Start of commercial production
1
2006-12
2019-03-07

CMF03(T2L相似产品对比

CMF03(T2L CMF03(T2L,TEM,Q)
描述 Rectifier Diode Rectifier Diode
厂商名称 Toshiba(东芝) Toshiba(东芝)
Reach Compliance Code unknown unknown
应用 FAST RECOVERY FAST RECOVERY
配置 SINGLE SINGLE
二极管元件材料 SILICON SILICON
二极管类型 RECTIFIER DIODE RECTIFIER DIODE
最大正向电压 (VF) 2.5 V 2.5 V
JESD-30 代码 R-PDSO-F2 R-PDSO-F2
最大非重复峰值正向电流 10 A 10 A
元件数量 1 1
相数 1 1
端子数量 2 2
最高工作温度 125 °C 125 °C
最低工作温度 -40 °C -40 °C
最大输出电流 0.5 A 0.5 A
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE
最大重复峰值反向电压 900 V 900 V
最大反向电流 50 µA 50 µA
最大反向恢复时间 0.1 µs 0.1 µs
反向测试电压 900 V 900 V
表面贴装 YES YES
端子形式 FLAT FLAT
端子位置 DUAL DUAL

 
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