DDR DRAM, 256MX72, 0.255ns, CMOS, ROHS COMPLIANT, DIMM-240
| HMT125R7BFR4A-H9 | HMT112R7BFR8A-H9 | HMT112R7BFR8A-G7 | HMT125R7BFR8A-H9 | HMT125R7BFR4A-G7 | HMT125R7BFR8A-G7 | HMT151R7BFR8A-G7 | HMT151R7BFR4A-G7 | |
|---|---|---|---|---|---|---|---|---|
| 描述 | DDR DRAM, 256MX72, 0.255ns, CMOS, ROHS COMPLIANT, DIMM-240 | 240pin DDR3L SDRAM Registered DIMM | 240pin DDR3L SDRAM Registered DIMM | 240pin DDR3L SDRAM Registered DIMM | 240pin DDR3L SDRAM Registered DIMM | 240pin DDR3L SDRAM Registered DIMM | 240pin DDR3L SDRAM Registered DIMM | 240pin DDR3L SDRAM Registered DIMM |
| 是否Rohs认证 | - | 符合 | 符合 | 符合 | 符合 | 符合 | 符合 | 符合 |
| 厂商名称 | - | SK Hynix(海力士) | SK Hynix(海力士) | SK Hynix(海力士) | SK Hynix(海力士) | SK Hynix(海力士) | SK Hynix(海力士) | SK Hynix(海力士) |
| 零件包装代码 | - | DIMM | DIMM | DIMM | DIMM | DIMM | DIMM | DIMM |
| 包装说明 | - | DIMM, DIMM240,40 | DIMM, DIMM240,40 | DIMM, DIMM240,40 | DIMM, DIMM240,40 | DIMM, DIMM240,40 | DIMM, DIMM240,40 | DIMM, DIMM240,40 |
| 针数 | - | 240 | 240 | 240 | 240 | 240 | 240 | 240 |
| Reach Compliance Code | - | compli | compli | compli | compliant | compliant | compli | compli |
| ECCN代码 | - | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 访问模式 | - | SINGLE BANK PAGE BURST | SINGLE BANK PAGE BURST | DUAL BANK PAGE BURST | DUAL BANK PAGE BURST | DUAL BANK PAGE BURST | FOUR BANK PAGE BURST | DUAL BANK PAGE BURST |
| 最长访问时间 | - | 0.255 ns | 0.3 ns | 0.255 ns | 0.3 ns | 0.3 ns | 0.3 ns | 0.3 ns |
| 其他特性 | - | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH |
| 最大时钟频率 (fCLK) | - | 667 MHz | 533 MHz | 667 MHz | 533 MHz | 533 MHz | 533 MHz | 533 MHz |
| I/O 类型 | - | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
| JESD-30 代码 | - | R-XDMA-N240 | R-XDMA-N240 | R-XDMA-N240 | R-XDMA-N240 | R-XDMA-N240 | R-XDMA-N240 | R-XDMA-N240 |
| JESD-609代码 | - | e1 | e1 | e1 | e1 | e1 | e1 | e1 |
| 内存密度 | - | 9663676416 bi | 9663676416 bi | 19327352832 bi | 19327352832 bit | 19327352832 bit | 38654705664 bi | 38654705664 bi |
| 内存集成电路类型 | - | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM |
| 内存宽度 | - | 72 | 72 | 72 | 72 | 72 | 72 | 72 |
| 功能数量 | - | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端口数量 | - | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | - | 240 | 240 | 240 | 240 | 240 | 240 | 240 |
| 字数 | - | 134217728 words | 134217728 words | 268435456 words | 268435456 words | 268435456 words | 536870912 words | 536870912 words |
| 字数代码 | - | 128000000 | 128000000 | 256000000 | 256000000 | 256000000 | 512000000 | 512000000 |
| 工作模式 | - | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
| 最高工作温度 | - | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C |
| 组织 | - | 128MX72 | 128MX72 | 256MX72 | 256MX72 | 256MX72 | 512MX72 | 512MX72 |
| 输出特性 | - | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 封装主体材料 | - | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
| 封装代码 | - | DIMM | DIMM | DIMM | DIMM | DIMM | DIMM | DIMM |
| 封装等效代码 | - | DIMM240,40 | DIMM240,40 | DIMM240,40 | DIMM240,40 | DIMM240,40 | DIMM240,40 | DIMM240,40 |
| 封装形状 | - | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | - | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY |
| 峰值回流温度（摄氏度） | - | 260 | 260 | 260 | 260 | 260 | 260 | 260 |
| 电源 | - | 1.35 V | 1.35 V | 1.35 V | 1.35 V | 1.35 V | 1.35 V | 1.35 V |
| 认证状态 | - | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 刷新周期 | - | 8192 | 8192 | 8192 | 8192 | 8192 | 8192 | 8192 |
| 自我刷新 | - | YES | YES | YES | YES | YES | YES | YES |
| 最大待机电流 | - | 0.318 A | 0.318 A | 0.408 A | 0.408 A | 0.408 A | 0.588 A | 0.588 A |
| 最大压摆率 | - | 2.159 mA | 1.889 mA | 2.474 mA | 3.104 mA | 2.159 mA | 2.744 mA | 3.644 mA |
| 最大供电电压 (Vsup) | - | 1.45 V | 1.45 V | 1.45 V | 1.45 V | 1.45 V | 1.45 V | 1.45 V |
| 最小供电电压 (Vsup) | - | 1.283 V | 1.283 V | 1.283 V | 1.283 V | 1.283 V | 1.283 V | 1.283 V |
| 标称供电电压 (Vsup) | - | 1.35 V | 1.35 V | 1.35 V | 1.35 V | 1.35 V | 1.35 V | 1.35 V |
| 表面贴装 | - | NO | NO | NO | NO | NO | NO | NO |
| 技术 | - | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | - | OTHER | OTHER | OTHER | OTHER | OTHER | OTHER | OTHER |
| 端子面层 | - | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Silver/Copper (Sn/Ag/Cu) |
| 端子形式 | - | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD |
| 端子节距 | - | 1 mm | 1 mm | 1 mm | 1 mm | 1 mm | 1 mm | 1 mm |
| 端子位置 | - | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
| 处于峰值回流温度下的最长时间 | - | 20 | 20 | 20 | 20 | 20 | 20 | 20 |
ARM技术
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