SG572124FG8E8UU
May 26, 2006
Ordering Information
Part Numbers
SG572124FG8E8DB
Description
512Mx72 (4GB), DDR2, 240-pin DIMM, Registered, ECC,
512Mx4 Based (Stacked - two 256Mx4), DDR2-400-333,
30.00mm, 22Ω DQ termination, Green Module (RoHS
Compliant).
512Mx72 (4GB), DDR2, 240-pin DIMM, Registered, ECC,
512Mx4 Based (Stacked - two 256Mx4), DDR2-533-444,
30.00mm, 22Ω DQ termination, Green Module (RoHS
Compliant).
512Mx72 (4GB), DDR2, 240-pin DIMM, Registered, ECC,
512Mx4 Based (Stacked - two 256Mx4), DDR2-667-555,
30.00mm, 22Ω DQ termination, Green Module (RoHS
Compliant).
Module Speed
PC2-3200 @ CL 3.0
SG572124FG8E8DG
PC2-4200 @ CL 4.0
SG572124FG8E8IL
PC2-5300 @ CL 5.0
Corporate Headquarters:
P. O. Box 1757, Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
5 Kelvin Park South, Kelvin South, East Kilbride, G75 ORH, United Kingdom • Tel: +44-870-870-8747 • Fax: +44-870-870-8757
Asia/Pacific:
Plot 18, Lrg Jelawat 4, Kawasan Perindustrian Seberang Jaya 13700, Prai, Penang, Malaysia • Tel: +604-3992909 • Fax: +604-3992903
1
SG572124FG8E8UU
May 26, 2006
Revision History
• May 26, 2006
Corrected the OCD Program in the EMRS on page 14.
Changed the Ambient Operating temperature to 0 to +65°C on page 16.
Added the Case Operating temperature on page 16.
• September 12, 2005
Corrected the DLL Enable in the EMRS on page 14.
• August 24, 2005
Changed datasheet part number from SG572124FG8E8DU to SG572124FG8E8UU because of the addition of a
new Module Process Technology with different CAS Latencies.
Added SG572124FG8E8IL to the Ordering Information on page 1.
• April 25, 2005
Updated the current values for PC2-3200 on page 20.
Changed the title to say Device AC Operating Conditions on pages 22 & 23.
• March 2, 2005
Datasheet released.
Corporate Headquarters:
P. O. Box 1757, Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
5 Kelvin Park South, Kelvin South, East Kilbride, G75 ORH, United Kingdom • Tel: +44-870-870-8747 • Fax: +44-870-870-8757
Asia/Pacific:
Plot 18, Lrg Jelawat 4, Kawasan Perindustrian Seberang Jaya 13700, Prai, Penang, Malaysia • Tel: +604-3992909 • Fax: +604-3992903
2
SG572124FG8E8UU
May 26, 2006
4GByte (512Mx72) DDR2 SDRAM Module - 512Mx4 Based (Stacked - two 256Mx4)
240-pin DIMM, Registered, ECC
Features
• Standard
• Configuration
• Cycle Time
• CAS# Latency
:
:
:
:
JEDEC
ECC
5.0ns (DDR2-400)
3.75ns (DDR2-533)
3.0ns (DDR2-667)
3.0, 4.0 (DDR2-400/533)
4.0, 5.0 (DDR2-667)
0, 1.0, 2.0, 3.0 & 4.0
Read (CAS#) Latency - 1
4, 8
•
•
•
•
•
•
•
•
•
Burst Type
:
Sequential/Interleave
No. of Internal
Banks per SDRAM :
8
Operating Voltage :
1.8V
Refresh
:
8K/64ms
Device Physicals :
Stacked FBGA
Lead Finish
:
Gold
Length x Height
:
133.35mm x 30.00mm
No. of sides
:
Double-sided
Mating Connector (Examples)
Vertical
:
Molex - 87705-0021
• Posted CAS#/Additive
Latency (AL)
:
• Write Latency (WL)
:
• Burst Length
:
240-Pin DDR2 DIMM Pin List
Pin Pin
No. Name
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
V
REF
V
SS
DQ0
DQ1
V
SS
DQS0#
DQS0
V
SS
DQ2
DQ3
V
SS
DQ8
DQ9
V
SS
DQS1#
DQS1
V
SS
RESET#
NC
V
SS
Pin Pin
No. Name
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
DQ19
V
SS
DQ24
DQ25
V
SS
DQS3#
DQS3
V
SS
DQ26
DQ27
V
SS
CB0
CB1
V
SS
DQS8#
DQS8
V
SS
CB2
CB3
V
SS
Pin Pin
No. Name
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
A4
V
DDQ
A2
V
DD
V
SS
V
SS
V
DD
DU
V
DD
A10/AP
BA0
V
DDQ
WE#
CAS#
V
DDQ
CS1#
ODT1
V
DDQ
V
SS
DQ32
Pin Pin
No. Name
91
92
93
94
95
96
97
98
99
V
SS
DQS5#
DQS5
V
SS
DQ42
DQ43
V
SS
DQ48
DQ49
Pin Pin
No. Name
121 V
SS
122 DQ4
123 DQ5
124 V
SS
125 DQS9
126 DQS9#
127 V
SS
128 DQ6
129 DQ7
130 V
SS
131 DQ12
132 DQ13
133 V
SS
134 DQS10
135 DQS10#
136 V
SS
137 DU
138 DU
139 V
SS
140 DQ14
Pin Pin
No. Name
151 V
SS
152 DQ28
153 DQ29
154 V
SS
155 DQS12
156 DQS12#
157 V
SS
158 DQ30
159 DQ31
160 V
SS
161 CB4
162 CB5
163 V
SS
164 DQS17
165 DQS17#
166 V
SS
167 CB6
168 CB7
169 V
SS
170 V
DDQ
Pin Pin
No. Name
181 V
DDQ
182 A3
183 A1
184 V
DD
185 CK0
186 CK0#
187 V
DD
188 A0
189 V
DD
190 BA1
191 V
DDQ
192 RAS#
193 CS0#
194 V
DDQ
195 ODT0
196 A13
197 V
DD
198 V
SS
199 DQ36
200 DQ37
Pin Pin
No. Name
211 DQS14
212 DQS14#
213 V
SS
214 DQ46
215 DQ47
216 V
SS
217 DQ52
218 DQ53
219 V
SS
220 DU
221 DU
222 V
SS
223 DQS15
224 DQS15#
225 V
SS
226 DQ54
227 DQ55
228 V
SS
229 DQ60
230 DQ61
100 V
SS
101 SA2
102 NC
103 V
SS
104 DQS6#
105 DQS6
106 V
SS
107 DQ50
108 DQ51
109 V
SS
110 DQ56
(All specifications of this module are subject to change without notice.)
Corporate Headquarters:
P. O. Box 1757, Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
5 Kelvin Park South, Kelvin South, East Kilbride, G75 ORH, United Kingdom • Tel: +44-870-870-8747 • Fax: +44-870-870-8757
Asia/Pacific:
Plot 18, Lrg Jelawat 4, Kawasan Perindustrian Seberang Jaya 13700, Prai, Penang, Malaysia • Tel: +604-3992909 • Fax: +604-3992903
3
SG572124FG8E8UU
May 26, 2006
240-pin DDR2 DIMM Pin List (Contd.)
Pin Pin
No. Name
21
22
23
24
25
26
27
28
29
30
DQ10
DQ11
V
SS
DQ16
DQ17
V
SS
DQS2#
DQS2
V
SS
DQ18
Pin Pin
No. Name
51
52
53
54
55
56
57
58
59
60
V
DDQ
CKE0
V
DD
BA2
DU
V
DDQ
A11
A7
V
DD
A5
Pin Pin
No. Name
81
82
83
84
85
86
87
88
89
90
DQ33
V
SS
DQS4#
DQS4
V
SS
DQ34
DQ35
V
SS
DQ40
DQ41
Pin Pin
No. Name
111 DQ57
112 V
SS
113 DQS7#
114 DQS7
115 V
SS
116 DQ58
117 DQ59
118 V
SS
119 SDA
120 SCL
Pin Pin
No. Name
141 DQ15
142 V
SS
143 DQ20
144 DQ21
145 V
SS
146 DQS11
147 DQS11#
148 V
SS
149 DQ22
150 DQ23
Pin Pin
No. Name
171 CKE1
172 V
DD
173 A15 (NC)
174 A14 (NC)
175 V
DDQ
176 A12
177 A9
178 V
DD
179 A8
180 A6
Pin Pin
No. Name
201 V
SS
202 DQS13
203 DQS13#
204 V
SS
205 DQ38
206 DQ39
207 V
SS
208 DQ44
209 DQ45
210 V
SS
Pin Pin
No. Name
231 V
SS
232 DQS16
233 DQS16#
234 V
SS
235 DQ62
236 DQ63
237 V
SS
238 V
DDSPD
239 SA0
240 SA1
Pin Description Table
Symbol
CK0
Type
SSTL_18
Polarity
Positive
Edge
Negative
Edge
Active High
Function
Positive line of the differential pair of system clock inputs. (All DDR2 SDRAM address and
control inputs are sampled on the rising edge of their associated clocks. Output data is ref-
erenced at the crossings of the clocks.)
Negative line of the differential pair of system clock inputs.
On-Die Termination: ODT when high enables termination resistance internal to the DDR2
SDRAM. When enabled, ODT is only applied to each of the following pins: DQ, DQS, and
DM. The ODT input will be ignored if disabled in Extended Mode Register (EMRS).
Activates the DDR2 SDRAM CLK signal when high and deactivates the CLK signal when
low. By deactivating the clocks, CKE low initiates the Power Down mode, or the Self
Refresh mode.
Enables the associated DDR2 SDRAM command decoder when low and disables decoder
when high. When decoder is disabled, new commands are ignored but previous operations
continue.
When sampled at the positive rising edge of the clock, CAS#, RAS#, and WE# define the
operations to be executed by the SDRAM.
Bank Address define to which bank an Activate, Read, Write or Precharge command is
being applied. Bank address also determines if the Mode Register or Extended Mode Reg-
ister is to be accessed during a MRS or EMRS cycle.
CK0#
ODT0, ODT1
SSTL_18
SSTL_18
CKE0, CKE1
SSTL_18
Active High
CS0#, CS1#
SSTL_18
Active Low
RAS#, CAS#,
WE#
BA0~BA2
SSTL_18
SSTL_18
Active Low
-
Corporate Headquarters:
P. O. Box 1757, Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
5 Kelvin Park South, Kelvin South, East Kilbride, G75 ORH, United Kingdom • Tel: +44-870-870-8747 • Fax: +44-870-870-8757
Asia/Pacific:
Plot 18, Lrg Jelawat 4, Kawasan Perindustrian Seberang Jaya 13700, Prai, Penang, Malaysia • Tel: +604-3992909 • Fax: +604-3992903
4
SG572124FG8E8UU
May 26, 2006
Pin Description Table (Contd.)
Symbol
A0~A9,
A10/AP,
A11~A13
Type
SSTL_18
Polarity
-
Function
During a Bank Activate command cycle, A0-A13 defines the row address (RA0-RA13)
when sampled at the rising clock edge.
During a Read or Write command cycle, A0-A9, A11 defines the column address (CA0-
CA9, CA11) when sampled at the rising clock edge. In addition to the column address,
A10/AP is used to invoke autoprecharge operation at the end of the burst read or write
cycle. If AP is high, autoprecharge is selected and BA0~BA2 defines the bank to be pre-
charged. If AP is low, autoprecharge is disabled.
During a Precharge command cycle, A10/AP is used in conjunction with BA0~BA2 to con-
trol which bank(s) to precharge. If AP is high, all banks will be precharged regardless of the
state of BA0~BA2. If AP is low, BA0~BA2 are used to define which bank to precharge. The
address inputs also provide the op-code during Mode Register Set commands.
Data and Check Bit Input/Output pins.
DDR2 SDRAM differential data strobe for input and output data.
DDR2 SDRAM differential data strobe for input and output data.
Slave Address Select for EEPROM. These pins are used to configure the presence-detect
device.
Serial Bus Data Line for EEPROM. SDA is a bidirectional pin used to transfer addresses
and data into and out of the presence-detect portion of the module. A resistor must be con-
nected from the SDA bus line to V
DD
to act as pull up on the system board.
Serial Bus Clock for EEPROM. SCL is used to synchronize the presence-detect data trans-
fer to and from the module. A resistor may be connected from the SCL bus line to V
DD
to
act as pull up on the system board.
Register and PLL control pin. When low, all register outputs will be driven low and the PLL
clocks to the DRAM and register will be set to low levels (the PLL will remain synchronized
with the input clock, if within spec range).
SDRAM positive power supply. 1.8V±0.1V
Power supply return (ground).
SDRAM I/O reference supply.
SDRAM I/O Driver positive power supply.1.8V±0.1V
Serial EEPROM positive power supply (wired to a separate power pin at the connector
which supports operation from 1.7V to 3.6V).
No Connection.
Do not use.
DQ0~DQ63
CB0~CB7
DQS0~DQS17
DQS0#~DQS17#
SA0~SA2
SDA
SSTL_18
SSTL_18
SSTL_18
LVTTL
LVTTL
-
Positive
Edge
Negative
Edge
-
-
SCL
LVTTL
-
RESET#
LV-
CMOS
Supply
Supply
Supply
Supply
Supply
-
-
Active Low
V
DD
V
SS
V
REF
V
DDQ
V
DDSPD
NC
DU
-
-
-
-
-
-
-
Corporate Headquarters:
P. O. Box 1757, Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
5 Kelvin Park South, Kelvin South, East Kilbride, G75 ORH, United Kingdom • Tel: +44-870-870-8747 • Fax: +44-870-870-8757
Asia/Pacific:
Plot 18, Lrg Jelawat 4, Kawasan Perindustrian Seberang Jaya 13700, Prai, Penang, Malaysia • Tel: +604-3992909 • Fax: +604-3992903
5
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