PD - 91804E
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (LCC-18)
Product Summary
Part Number Radiation Level
IRHE9230
100K Rads (Si)
IRHE93230
300K Rads (Si)
R
DS(on)
0.80Ω
0.80Ω
I
D
-4.0A
-4.0A
IRHE9230
200V, P-CHANNEL
REF: MIL-PRF-19500/630
®
™
RAD-Hard HEXFET
MOSFET TECHNOLOGY
QPL Part Number
JANSR2N7390U
JANSF2N7390U
International Rectifier’s RAD-Hard
TM
HEXFET
®
MOSFET
technology provides high performance power MOSFETs
for space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been characterized
for both Total Dose and Single Event Effects (SEE). The
combination of low Rdson and low gate charge reduces
the power losses in switching applications such as DC to
DC converters and motor control. These devices retain
all of the well established advantages of MOSFETs such
as voltage control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
LCC - 18
Features:
n
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Low R
DS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Surface Mount
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
➁
Avalanche Current
➀
Repetitive Avalanche Energy
➀
Peak Diode Recovery dv/dt
➂
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
For footnotes refer to the last page
300 ( for 5s)
0.42 (Typical)
-4.0
-2.4
-16
25
0.2
±20
171
-4.0
2.5
-27
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
g
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1
2/20/02
IRHE9230
Pre-Irradiation
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
∆BV
DSS /∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source
On-State Resistance
VGS(th)
Gate Threshold Voltage
g fs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
-200
—
—
—
-2.0
2.5
—
—
—
—
—
—
—
—
—
—
—
—
Typ Max Units
—
-0.25
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.1
—
—
0.80
0.92
-4.0
—
-25
-250
-100
100
45
10
25
30
30
75
65
—
V
V/°C
Ω
V
S( )
µA
Ω
Test Conditions
VGS =0 V, ID = -1.0mA
Reference to 25°C, ID = -1.0mA
VGS = -12V, ID = -2.4A
VGS = -12V, ID = -4.0A
VDS = VGS, ID = -1.0mA
VDS > -15V, IDS = -2.4A
VDS= -160V,VGS=0V
VDS = -160V
VGS = 0V, TJ = 125°C
VGS = -20V
VGS = 20V
VGS = -12V, ID = -4.0A
VDS = -50V
VDD = -100V, ID = -4.0A,
RG = 7.5Ω
IGSS
IGSS
Qg
Q gs
Q gd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
nA
nC
ns
nH
Measured from the center of
drain pad to center of source pad
VGS = 0V, VDS = -25V
f = 1.0MHz
Ciss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
1200
190
45
—
—
—
pF
Source-Drain Diode Ratings and Characteristics
Parameter
IS
ISM
VSD
trr
Q RR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
➀
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min Typ Max Units
—
—
—
—
—
—
—
—
—
—
-4.0
-16
-5.0
400
1.6
Test Conditions
A
V
nS
µC
T
j
= 25°C, IS = -4.0A, VGS = 0V
➃
Tj = 25°C, IF = -4.0A, di/dt
≥
-100A/µs
VDD
≤
-25V
➃
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJPCB
Junction-to-Case
Junction-to-PC Board
Min Typ Max
—
—
—
19
5.0
—
Units
°C/W
Test Conditions
Solder to a copper clad PC Board
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
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Radiation Characteristics
Pre-Irradiation
IRHE9230
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
➄➅
Parameter
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
R
DS(on)
V
SD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
➃
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
➃
On-State Resistance (TO-3)
Static Drain-to-Source
➃
On-State Resistance (LCC-18)
Diode Forward Voltage
➃
100K Rads(Si)
1
300K Rads (Si)
2
Units
V
nA
µA
Ω
Ω
V
Test Conditions
V
GS
= 0V, I
D
= -1.0mA
V
GS
= V
DS
, I
D
= -1.0mA
V
GS
= -20V
V
GS
= 20 V
V
DS
=-160V, V
GS
=0V
V
GS
= -12V, I
D
=-2.4A
V
GS
= -12V, I
D
=-2.4A
V
GS
= 0V, IS = -4.0A
Min
-200
- 2.0
—
—
—
—
—
—
Max
—
- 4.0
-100
100
-25
???
0.80
-5.0
Min
-200
-2.0
—
—
—
—
—
—
Max
—
-5.0
-100
100
-25
???
0.80
-5.0
1. Part number IRHE9230 (JANSR2N7390U)
2. Part number IRHE93230 (JANSF2N7390U)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
Cu
Br
LET
MeV/(mg/cm ))
28
36.8
2
Energy
(MeV)
285
305
Range
(µm)
43
39
V
DS(V)
@
V
GS
=0V @
V
GS
=5V @
V
GS
=10V
-200
-200
-200
-200
-200
-160
@
V
GS
=15V @
V
GS
=20V
-200
—
-75
—
-250
-200
VDS
-150
-100
-50
0
0
5
10
VGS
15
20
Cu
Br
Fig a.
Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHE9230
Pre-Irradiation
100
-I
D
, Drain-to-Source Current (A)
-I
D
, Drain-to-Source Current (A)
VGS
TOP
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
100
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
TOP
10
10
-5.0V
-5.0V
1
1
10
20µs PULSE WIDTH
T = 25 C
J
°
100
1
1
20µs PULSE WIDTH
T = 150 C
J
°
10
100
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.5
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= -4.0A
-I
D
, Drain-to-Source Current (A)
2.0
T
J
= 25
°
C
10
1.5
T
J
= 150
°
C
1.0
0.5
1
5.0
V DS = -50V
20µs PULSE WIDTH
7.0
7.5
5.5
6.0
6.5
8.0
0.0
-60 -40 -20
V
GS
= -12V
0
20
40
60
80 100 120 140 160
-V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
4
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Pre-Irradiation
IRHE9230
2000
1600
-V
GS
, Gate-to-Source Voltage (V)
V
GS
=
C
iss
=
C
rss
=
C
oss
=
0V,
f = 1MHz
C
gs
+ C
gd ,
C
ds
SHORTED
C
gd
C
ds
+ C
gd
20
I
D
= -4.0A
16
V
DS
=-160V
V
DS
=-100V
V
DS
=-40V
C, Capacitance (pF)
1200
C
iss
12
800
8
400
C
oss
C
rss
4
0
1
10
100
0
0
10
20
FOR TEST CIRCUIT
SEE FIGURE 13
40
50
30
60
-V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
-I
SD
, Reverse Drain Current (A)
-I
D
, Drain Current (A)
I
10us
10
10
T
J
= 150
°
C
100us
1ms
1
1
T
J
= 25
°
C
V
GS
= 0 V
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.1
0.5
0.1
T
C
= 25 ° C
T
J
= 150 ° C
Single Pulse
1
10
100
10ms
1000
-V
SD
,Source-to-Drain Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
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