Power Field-Effect Transistor, 9.5A I(D), 20V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8
| 参数名称 | 属性值 |
| 厂商名称 | Integrated Circuit Systems（IDT ） |
| 零件包装代码 | SOT |
| 包装说明 | SMALL OUTLINE, R-PDSO-G8 |
| 针数 | 8 |
| Reach Compliance Code | unknown |
| ECCN代码 | EAR99 |
| 配置 | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 20 V |
| 最大漏极电流 (ID) | 9.5 A |
| 最大漏源导通电阻 | 0.02 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码 | R-PDSO-G8 |
| 元件数量 | 1 |
| 端子数量 | 8 |
| 工作模式 | ENHANCEMENT MODE |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 极性/信道类型 | P-CHANNEL |
| 最大脉冲漏极电流 (IDM) | 76 A |
| 认证状态 | Not Qualified |
| 表面贴装 | YES |
| 端子形式 | GULL WING |
| 端子位置 | DUAL |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| AF4409PSL | AF4409PS | AF4409PSLA | AF4409PSA | |
|---|---|---|---|---|
| 描述 | Power Field-Effect Transistor, 9.5A I(D), 20V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8 | Power Field-Effect Transistor, 9.5A I(D), 20V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | Power Field-Effect Transistor, 9.5A I(D), 20V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8 | Power Field-Effect Transistor, 9.5A I(D), 20V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 |
| 厂商名称 | Integrated Circuit Systems（IDT ） | Integrated Circuit Systems（IDT ） | Integrated Circuit Systems（IDT ） | Integrated Circuit Systems（IDT ） |
| 零件包装代码 | SOT | SOT | SOT | SOT |
| 包装说明 | SMALL OUTLINE, R-PDSO-G8 | SMALL OUTLINE, R-PDSO-G8 | SMALL OUTLINE, R-PDSO-G8 | SMALL OUTLINE, R-PDSO-G8 |
| 针数 | 8 | 8 | 8 | 8 |
| Reach Compliance Code | unknown | unknown | unknown | unknown |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 20 V | 20 V | 20 V | 20 V |
| 最大漏极电流 (ID) | 9.5 A | 9.5 A | 9.5 A | 9.5 A |
| 最大漏源导通电阻 | 0.02 Ω | 0.02 Ω | 0.02 Ω | 0.02 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码 | R-PDSO-G8 | R-PDSO-G8 | R-PDSO-G8 | R-PDSO-G8 |
| 元件数量 | 1 | 1 | 1 | 1 |
| 端子数量 | 8 | 8 | 8 | 8 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| 极性/信道类型 | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL |
| 最大脉冲漏极电流 (IDM) | 76 A | 76 A | 76 A | 76 A |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | YES | YES | YES | YES |
| 端子形式 | GULL WING | GULL WING | GULL WING | GULL WING |
| 端子位置 | DUAL | DUAL | DUAL | DUAL |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON |
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