Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . E
AS
Operating and Storage Temperature . . . . . . . . . . . .T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . T
L
Package Body for 10s, See TB334 . . . . . . . . . . . . . . . T
pkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
TEST CONDITIONS
I
D
= 250µA, V
GS
= 0V, (Figure 10)
500
450
V
GS(TH)
I
DSS
V
GS
= V
DS
, I
D
= 250µA
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V,
T
J
= 125
o
C
2.0
-
-
-
-
-
-
-
-
-
4.0
25
250
V
V
V
µA
µA
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
IRF420, IRF422
IRF421, IRF423
Gate Threshold Voltage
Zero Gate Voltage Drain Current
On-State Drain Current (Note 2)
IRF420, IRF421
IRF422, IRF423
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
IRF420, IRF421
IRF422, IRF423
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
I
D(ON)
V
DS
> I
D(ON)
x r
DS(ON)MAX
, V
GS
= 10V
(Figure 7)
2.5
2.2
-
-
-
-
-
±100
A
A
nA
I
GSS
r
DS(ON)
V
GS
=
±20V
I
D
= 1.4A, V
GS
= 10V, (Figures 8, 9)
-
-
-
gfs
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(TOT)
Q
gs
Q
gd
V
GS
= 10V, I
D
≈
2.5A, V
DS
= 0.8 x Rated BV
DSS,
I
G(REF)
= 1.5mA, (Figures 14, 19, 20)
Gate Charge is Essentially Independent of
Operating Temperature
V
DS
≥
10V, I
D
= 2.0A, (Figure 12)
V
DD
= 250V, I
D
≈
2.5A, R
G
= 18Ω, R
L
= 96Ω,
V
GS
= 10V, (Figures 17, 18) MOSFET Switching
Times are Essentially Independent of Operating
Temperature
1.5
-
-
-
-
-
2.5
3.0
2.3
10
12
28
12
11
3.0
4.0
-
15
18
42
18
19
Ω
Ω
S
ns
ns
ns
ns
nC
-
-
5
6
-
-
nC
nC
5-2
IRF420, IRF421, IRF422, IRF423
Electrical Specifications
PARAMETER
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
T
C
= 25
o
C, Unless Otherwise Specified
(Continued)
SYMBOL
C
ISS
C
OSS
C
RSS
L
D
Measured between the
Contact Screw on the
Flange that is Closer to
Source and Gate Pins
and the Center of Die.
Measured from the
Source Lead, 6mm
(0.25in) from the Flange
and Source Bonding
Pad.
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances.
D
L
D
G
L
S
S
TEST CONDITIONS
V
DS
= 25V, V
GS
= 0V, f = 1MHz, (Figure 11)
MIN
-
-
-
-
TYP
300
75
20
5.0
MAX
-
-
-
-
UNITS
pF
pF
pF
nH
Internal Source Inductance
L
S
-
12.5
-
nH
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
R
θJC
R
θJA
Free Air Operation
-
-
-
-
2.5
30
o
C/W
o
C/W
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulse Source to Drain Current
(Note 3)
SYMBOL
I
SD
I
SDM
TEST CONDITIONS
Modified MOSFET
Symbol Showing the
Integral Reverse P-N
Junction Diode
D
MIN
-
-
TYP
-
-
MAX
2.5
10
UNITS
A
A
G
S
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovered Charge
NOTES:
V
SD
t
rr
Q
RR
T
J
= 25
o
C, I
SD
= 2.5A, V
GS
= 0V, (Figure 13)
T
J
= 25
o
C, I
SD
= 2.5A, dI
SD
/dt = 100A/µs
T
J
= 25
o
C, I
SD
= 2.5A, dI
SD
/dt = 100A/µs
-
130
0.57
-
270
1.2
1.4
540
2.3
V
ns
µC
2. Pulse test: pulse width
≤
300µs, duty cycle
≤
2%.
3. Repetitive rating: pulse width limited by max junction temperature. See Transient Thermal Impedance curve (Figure 3).
“tensymetry”这个词在《韦伯斯特词典》中没有解释，但在医学界却广为人知。由Tensys Medical Systems公司开发的tensymetry是一种使用生物机械、电气、软件工程的专有组合技术。利用这三种强大的技术，你可在手术室内对病人的心跳血压进行精确、连续、实时和非侵入性测量。 该技术结出的果实就是该公司的T-line Tensymeter产品。该产品线的最新进展是去年...[详细]
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