November 1995
2N7000 / 2N7002 / NDS7002A
N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode field effect transistors
are produced using Fairchild's proprietary, high cell density,
DMOS technology. These products have been designed to
minimize on-state resistance while provide rugged, reliable,
and fast switching performance. They can be used in most
applications requiring up to 400mA DC and can deliver
pulsed currents up to 2A. These products are particularly
suited for low voltage, low current applications such as small
servo motor control, power MOSFET gate drivers, and other
switching applications.
Features
High density cell design for low R
DS(ON)
.
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capability.
___________________________________________________________________________________________
D
G
D
G
S
TO-92
2N7000
S
(TO-236AB)
2N7002/NDS7002A
Absolute Maximum Ratings
Symbol
Parameter
T
A
= 25°C unless otherwise noted
2N7000
2N7002
NDS7002A
Units
V
DSS
Drain-Source Voltage
60
60
V
V
V
V
DGR
V
GSS
Drain-Gate Voltage (R
GS
< 1 M
Ω
)
Gate-Source Voltage - Continuous
- Non Repetitive (tp < 50µs)
±
20
±
40
200
500
400
3.2
-55 to 150
300
115
800
200
1.6
280
1500
300
2.4
-65 to 150
I
D
P
D
T
J
,T
STG
T
L
Maximum Drain Current - Continuous
- Pulsed
Maximum Power Dissipation
Derated above 25
o
C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering
Purposes, 1/16" from Case for 10 Seconds
mA
mW
mW/°C
°C
°C
THERMAL CHARACTERISTICS
R
θ
JA
Thermal Resistance, Junction-to-Ambient
312.5
625
417
°C/W
© 1997 Fairchild Semiconductor Corporation
2N7000.SAM Rev. A1
Electrical Characteristics
T
Symbol
Parameter
OFF CHARACTERISTICS
A
= 25°C unless otherwise noted
Conditions
Typ
e
Min
Typ
Max
Units
BV
DSS
I
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
V
GS
= 0 V, I
D
= 10 µA
V
DS
= 48 V, V
GS
= 0 V
T
J
=125°C
V
DS
= 60 V, V
GS
= 0 V
T
J
=125°C
All
2N7000
60
1
1
V
µA
mA
µA
mA
nA
nA
nA
nA
2N7002
NDS7002A
2N7000
2N7002
NDS7002A
2N7000
2N7002
NDS7002A
1
0.5
10
100
-10
-100
I
GSSF
Gate - Body Leakage, Forward
V
GS
= 15 V, V
DS
= 0 V
V
GS
= 20 V, V
DS
= 0 V
I
GSSR
Gate - Body Leakage, Reverse
V
GS
= -15 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
ON CHARACTERISTICS
(Note 1)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250 µA
2N7000
2N7002
NDS7002A
2N7000
0.8
1
2.1
2.1
1.2
1.9
1.8
3
2.5
5
9
5.3
7.5
13.5
7.5
13.5
2
3.5
3
5
2.5
0.4
3.75
1.5
1
0.15
V
R
DS(ON)
Static Drain-Source On-Resistance V
GS
= 10 V, I
D
= 500 mA
T
J
=125°C
V
GS
= 4.5 V, I
D
= 75 mA
V
GS
= 10 V, I
D
= 500 mA
T
J
=100°C
V
GS
= 5.0 V, I
D
= 50 mA
T
J
=100C
V
GS
= 10 V, I
D
= 500 mA
T
J
=125°C
V
GS
= 5.0 V, I
D
= 50 mA
T
J
=125°C
Ω
2N7002
1.2
1.7
1.7
2.4
NDS7002
A
1.2
2
1.7
2.8
V
DS(ON)
Drain-Source On-Voltage
V
GS
= 10 V, I
D
= 500 mA
V
GS
= 4.5 V, I
D
= 75 mA
V
GS
= 10 V, I
D
= 500mA
V
GS
= 5.0 V, I
D
= 50 mA
V
GS
= 10 V, I
D
= 500mA
V
GS
= 5.0 V, I
D
= 50 mA
2N7000
0.6
0.14
0.6
0.09
0.6
0.09
V
2N7002
NDS7002A
2N7000.SAM Rev. A1
Electrical Characteristics
T
Symbol
Parameter
A
= 25
o
C unless otherwise noted
Conditions
Typ
e
Min
Typ
Max
Units
ON CHARACTERISTICS
Continued
(Note 1)
I
D(ON)
On-State Drain Current
V
GS
= 4.5 V, V
DS
= 10 V
V
GS
= 10 V, V
DS
> 2 V
DS(on)
V
GS
= 10 V, V
DS
> 2 V
DS(on)
2N7000
2N7002
NDS7002A
2N7000
2N7002
NDS7002A
75
500
500
100
80
80
600
2700
2700
320
320
320
20
11
4
50
25
5
10
mA
g
FS
Forward Transconductance
V
DS
= 10 V, I
D
= 200 mA
V
DS
> 2 V
DS(on)
, I
D
= 200 mA
V
DS
> 2 V
DS(on)
, I
D
= 200 mA
mS
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
t
on
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
All
All
All
pF
pF
pF
ns
V
DD
= 15 V, R
L
= 25
Ω
,
I
D
= 500 mA, V
GS
= 10 V,
R
GEN
= 25
V
DD
= 30 V, R
L
= 150
Ω
,
I
D
= 200 mA, V
GS
= 10 V,
R
GEN
= 25
Ω
2N7000
2N700
2
NDS7002A
20
t
off
Turn-Off Time
V
DD
= 15 V, R
L
= 25
Ω
,
I
D
= 500 mA, V
GS
= 10 V,
R
GEN
= 25
V
DD
= 30 V, R
L
= 150
Ω
,
I
D
= 200 mA, V
GS
= 10 V,
R
GEN
= 25
Ω
2N7000
10
ns
2N700
2
NDS7002
A
20
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
I
SM
V
SD
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward
Voltage
V
GS
= 0 V, I
S
= 115 mA
(Note 1)
V
GS
= 0 V, I
S
= 400 mA
(Note 1)
2N7002
NDS7002A
2N7002
NDS7002A
2N7002
NDS7002
A
115
280
0.8
1.5
0.88
0.88
1.5
1.2
mA
A
V
Note:
1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
2N7000.SAM Rev. A1
Typical Electrical Characteristics
2N7000 / 2N7002 / NDS7002A
2
3
V
GS
= 10V
, DRAIN-SOURCE CURRENT (A)
1 .5
9.0
8.0
7.0
6.0
R
DS(on)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
2 .5
V
GS
=4.0V
4 .5
5 .0
6 .0
2
1
7 .0
1 .5
5.0
0 .5
8 .0
9 .0
10
4.0
3.0
0
1
2
3
V
DS
, DRAIN-SOURCE VOLTAGE (V)
4
5
1
I
0
D
0 .5
0
0 .4
0 .8
1 .2
I
D
, DRA IN CURRENT (A)
1 .6
2
Figure 1. On-Region Characteristics
Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current
2
3
V
GS
= 10V
DRAIN-SOURCE ON-RESISTANCE
V
GS
= 10V
DRAIN-SOURCE ON-RESISTANCE
2 .5
1.75
I
D
= 500m A
R
DS(on)
, NORMALIZED
R
DS(ON)
, NORMALIZED
1.5
2
TJ = 1 2 5 ° C
1.25
1 .5
25°C
1
1
-55°C
0 .5
0.75
0.5
-5 0
-2 5
0
25
50
75
100
T , JUNCTION T EMPERATURE (°C)
J
125
150
0
0
0 .4
0 .8
1 .2
I
D
, DRAIN CURRENT (A)
1 .6
2
Figure 3. On-Resistance Variation
with Temperature
Figure 4. On-Resistance Variation with Drain
Current and Temperature
2
1 .1
V
th
, NORMALIZED
GATE-SOURCE THRESHOLD VOLTAGE
V
DS
= 10V
1.6
I
D
, DRAIN CURRENT (A)
T J = -55°C
25°C
125°C
1 .0 5
V
DS
= V
GS
I
D
= 1 mA
1
1.2
0 .9 5
0.8
0 .9
0.4
0 .8 5
0
0
2
V
GS
4
6
8
, GATE TO SOURCE VOLTAGE (V)
10
0 .8
-50
-25
0
25
50
75
100
T
J
, JUNCTION TEM PERATURE (°C)
125
150
Figure 5. Transfer Characteristics
Figure 6. Gate Threshold Variation with
Temperature
2N7000.SAM Rev. A1
Typical Electrical Characteristics
(continued)
2N7000 / 2N7002 /NDS7002A
1.1
2
DRAIN-SOURCE BREAKDOWN VOLTAGE
I
D
= 250µA
I
S
, REVERSE DRAIN CURRENT (A)
1.075
1.05
1.025
1
0.975
0.95
0.925
-50
1
0 .5
V
GS
= 0V
BV
DSS
, NORMALIZED
TJ = 1 2 5 ° C
0 .1
0 .0 5
25°C
-5 5 ° C
0 .0 1
0 .0 0 5
-25
0
25
50
75
100
T
J
, JUNCTION TEM PERATURE (°C)
125
150
0 .0 0 1
0 .2
0 .4
V
SD
0 .6
0 .8
1
1 .2
, BODY DIODE FORW A RD VOLTAGE (V)
1 .4
Figure 7. Breakdown Voltage Variation
with Temperature
Figure 8. Body Diode Forward Voltage Variation with
60
40
10
V
DS
= 2 5 V
C iss
20
V
GS
, GATE-SOURCE VOLTAGE (V)
8
CAPACITANCE (pF)
C oss
10
6
I
D
= 5 0 0 m A
4
5
C rss
f = 1 MHz
V
GS
= 0V
1
2
V
DS
3
5
10
20
, DRAIN TO SOURCE VOLTAGE (V)
30
50
2
2
280m A
115m A
1
0
0
0 .4
0 .8
1 .2
Q
g
, GATE CHARGE (nC)
1 .6
2
Figure 9. Capacitance Characteristics
Figure 10. Gate Charge Characteristics
V
DD
t
d(on)
t
on
t
r
90%
t
off
t
d(off)
90%
t
f
V
IN
D
R
L
V
OUT
DUT
Output, Vout
V
GS
10%
10%
90%
R
GEN
Inverted
G
Input, Vin
S
10%
50%
50%
Pulse Width
Figure 11.
Figure 12. Switching Waveforms
2N7000.SAM Rev. A1
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