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NE32584C-SL

产品描述Transistor,
产品类别分立半导体    晶体管   
文件大小74KB,共12页
制造商NEC(日电)
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NE32584C-SL概述

Transistor,

NE32584C-SL规格参数

参数名称属性值
厂商名称NEC(日电)
包装说明,
Reach Compliance Codeunknown
最大漏极电流 (Abs) (ID)0.09 A
FET 技术METAL SEMICONDUCTOR
最高工作温度150 °C
极性/信道类型N-CHANNEL
功耗环境最大值0.165 W

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DATA SHEET
DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE32584C
C to Ku BAND SUPER LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
DESCRIPTION
The NE32584C is a Hetero Junction FET that utilizes the
hetero junction to create high mobility electrons. Its excellent
low noise and high associated gain make it suitable for DBS,
TVRO and another commercial systems.
1.78 ±0.2
1
L
L
PACKAGE DIMENSIONS
(Unit: mm)
• Super Low Noise Figure & High Associated Gain
NF = 0.45 dB TYP., G
a
= 12.5 dB TYP. at f = 12 GHz
• Gate Length : L
g
d
0.2
P
m
• Gate Width .. : W
g
= 200
P
m
1.78 ±0.2
D
2
L
3
L
4
ORDERING INFORMATION
SUPPLYING
FORM
STICK
Tape & reel
1000 pcs./reel
Tape & reel
5000 pcs./reel
PART NUMBER
NE32584C-SL
NE32584C-T1
LEAD LENGTH
L = 1.7 mm MIN.
L = 1.0
r
0.2 mm
L = 1.0
r
0.2 mm
MARKING
1.7 MAX.
0.1
D
0.5 TYP.
NE32584C-T1A
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
q
C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Total Power Dissipation
Channel Temperature
Storage Temperature
V
DS
V
GS
I
D
I
G
P
tot
T
ch
T
stg
4.0
–3.0
I
DSS
100
165
150
–65 to +150
V
V
mA
1.
2.
3.
4.
Source
Drain
Source
Gate
P
A
mW
qC
qC
RECOMMENDED OPERATING CONDITION (T
A
= 25
q
C)
CHARACTERISTIC
Drain to Source Voltage
Drain Current
Input Power
SYMBOL
V
DS
I
D
P
in
MIN.
TYP.
2
10
MAX.
3
20
0
Unit
V
mA
dBm
Document No. P12275EJ2V0DS00 (2nd edition)
(Previous No. TC-2515)
Date Published February 1997 N
Printed in Japan
©
0.5 TYP.
FEATURES
1994

NE32584C-SL相似产品对比

NE32584C-SL NE32584C-T1 NE32584C-T1A
描述 Transistor, RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Hetero-junction FET, RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-junction FET,
厂商名称 NEC(日电) NEC(日电) NEC(日电)
Reach Compliance Code unknown compliant unknown
FET 技术 METAL SEMICONDUCTOR HETERO-JUNCTION HETERO-JUNCTION
极性/信道类型 N-CHANNEL N-CHANNEL N-CHANNEL
其他特性 - LOW NOISE LOW NOISE
配置 - SINGLE SINGLE
最小漏源击穿电压 - 3 V 3 V
最大漏极电流 (ID) - 0.02 A 0.02 A
最高频带 - KU BAND KU BAND
JESD-30 代码 - X-CXMW-F4 O-CRDB-F4
元件数量 - 1 1
端子数量 - 4 4
工作模式 - DEPLETION MODE DEPLETION MODE
封装主体材料 - CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
封装形状 - UNSPECIFIED ROUND
封装形式 - MICROWAVE DISK BUTTON
最小功率增益 (Gp) - 11 dB 11 dB
认证状态 - Not Qualified Not Qualified
表面贴装 - YES YES
端子形式 - FLAT FLAT
端子位置 - UNSPECIFIED RADIAL
晶体管应用 - AMPLIFIER AMPLIFIER
晶体管元件材料 - GALLIUM ARSENIDE SILICON
Base Number Matches - 1 1

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