SURFACE MOUNT NPN SILICON
HIGH FREQUENCY TRANSISTOR
FEATURES
• LOW NOISE:
1.3 dB AT 2.0 GHz
• LOW VOLTAGE OPERATION
• EASY TO MATCH
• HIGH GAIN BANDWIDTH PRODUCT:
f
T
of 13 GHz
• AVAILABLE IN SIX LOW COST PLASTIC SURFACE
MOUNT PACKAGE STYLES
18 (SOT 343 STYLE)
NE687
SERIES
19 (3 PIN ULTRA SUPER
MINI MOLD)
ers
DESCRIPTION
mb ot
T E: a r t n u e n
NO g p
ar
gn.
E
et
AS
in
esi
LE
ow tashe ew d
P
oll
n
f
a
for
he th is d
for ffice
T
ed
om mend ales o
fr
ELECTRICAL CHARACTERISTICS
om call s
rec se
le a ls:
P
tai 30
de 87
E6
N
733
68
NE 8739
NE 6 8 7 3 9 R
E6
N
The NE687 series of NPN epitaxial silicon transistors are
designed for low cost, low noise applications. Excellent perfor-
mance at low voltage/low current makes this series an ideal
choice for portable wireless applications at 1.6, 1.9 and 2.4
GHz. The NE687 die is available in six different low cost plastic
surface mount package styles.
30 (SOT 323 STYLE)
33 (SOT 23 STYLE)
39 (SOT 143 STYLE)
(T
A
= 25°C)
PART NUMBER
1
EIAJ
2
REGISTERED NUMBER
PACKAGE OUTLINE
NE68718
2SC5185
18
NE68719
2SC5186
19
NE68730
2SC5184
30
NE68733
2SC5182
33
SYMBOLS
f
T
f
T
NF
MIN
NF
MIN
|S
21e
|
2
39R (SOT 143R STYLE)
NE68739/39R
2SC5183/83R
39/39R
PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX
GHz
GHz
dB
dB
10
8
13
9
11
9
9
11
9
9
12
7.5
7
10
8.5
1.3
1.3
10
8.5
140
100
100
0.4
0.8
90
625
2.0
2.0
|S
21e
|
h
FE
2
I
CBO
I
EBO
C
RE4
P
T
R
TH(J-A)
R
TH(J-C)
Gain Bandwidth Product at
V
CE
= 2 V, I
C
= 20 mA, f = 2.0 GHz
Gain Bandwidth Product at
V
CE
= 1 V, I
C
= 10 mA, f = 2.0 GHz
Minimum Noise Figure at
V
CE
= 2 V, I
C
= 3 mA, f = 2.0 GHz
Minimum Noise Figure at
V
CE
= 1 V, I
C
= 3 mA, f = 2.0 GHz
Insertion Power Gain at
V
CE
= 2V, I
C
=20 mA, f = 2.0 GHz
Insertion Power Gain at
V
CE
= 1V, I
C
=10 mA, f = 2.0 GHz
Forward Current Gain
3
at
V
CE
= 2 V, I
C
= 20 mA
Collector Cutoff Current
at V
CB
= 5 V, I
E
= 0 mA
Emitter Cutoff Current
at V
EB
= 1 V, I
C
= 0 mA
Feedback Capacitance at
V
CB
= 2 V, I
E
= 0 mA, f = 1 MHz
Total Power Dissipation
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Case)
11
7
7
7
10
1.3
1.3
11
9
2.0
2.0
1.3
1.3
10
2.0
2.0
1.3
1.3
2.0
2.0
1.3
1.3
2.0
2.0
dB
dB
8
8.5
6
7
8.5
7
8.5
7.5
7
7.5
70
7.5
6
7.5
6
7.5
140
70
140
70
140
70
140
70
nA
nA
pF
mW
°C/W
°C/W
0.3
100
100
0.6
90
833
0.4
100
100
0.8
90
1250
0.4
100
100
0.8
90
833
0.4
100
100
0.8
90
625
Notes:
3. Pulsed measurement, PW
≤
350
µs,
duty cycle
≤
2%.
1. Precaution: Devices are ESD sensitive. Use proper handling procedures. 4. The emitter terminal should be connected to the ground terminal
2. Electronic Industrial Association of Japan.
of the 3 terminal capacitance bridge.
California Eastern Laboratories
NE687 SERIES
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25°C)
SYMBOLS
V
CBO
V
CEO
V
EBO
I
C
T
J
T
STG
PARAMETERS
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Operating Junction
Temperature
Storage Temperature
UNITS
V
V
V
mA
°C
°C
RATINGS
5
3
2
30
150
-65 to +150
V
CE =
1.0 V
,
I
C =
3.0 mA
500
800
1000
1500
2000
1.10
1.19
1.25
1.36
1.50
17.66
14.48
12.93
9.61
7.52
18.60
15.10
13.40
10.30
8.10
20.30
16.70
15.00
11.90
9.80
6.70
0.47
0.39
0.34
0.29
0.24
0.40
0.35
0.31
0.26
0.23
0.02
0.06
0.08
0.12
0.14
0.18
15
33
45
57
73
12
24
33
44
58
-170
171
172
178
-175
-160
0.28
1.20
0.28
0.27
0.27
0.30
0.22
0.26
0.28
0.28
0.23
0.15
0.28
0.24
0.24
0.23
NE68730
TYPICAL NOISE PARAMETERS
(TA = 25˚C)
FREQ.
(MHz)
NF
OPT
(dB)
G
A
(dB)
Γ
OPT
MAG
ANG
Rn/50
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
V
CE =
2.0 V
,
I
C =
3.0 mA
500
1.10
800
1.19
1000
1.25
1500
1.36
2000
1.50
V
CE =
2.0 V
,
I
C =
20.0 mA
500
800
1000
1500
2000
2500
2.00
2.06
2.10
2.20
2.34
2.46
NE68718
TYPICAL NOISE PARAMETERS
(T
A
= 25˚C)
FREQ.
(MHz)
NF
OPT
(dB)
G
A
(dB)
Γ
OPT
MAG
ANG
Rn/50
V
CE =
0.5 V
,
I
C =
0.5 mA
500
1.10
13.07
800
1.31
11.23
1000
1.41
9.36
V
CE =
1.0 V
,
I
C =
1.0 mA
500
0.93
800
1.08
1000
1.20
1500
1.48
2000
1.72
V
CE =
1.0 V
,
I
C =
3 mA
500
1.10
800
1.15
1000
1.20
1500
1.38
2000
1.60
2500
1.82
3000
2.00
V
CE =
2 V
,
I
C =
3 mA
500
1.10
800
1.15
1000
1.20
1500
1.38
2000
1.60
2500
1.82
3000
2.00
V
CE =
2 V
,
I
C =
10 mA
500
800
1000
1500
2000
2500
3000
1.60
1.62
1.65
1.73
1.80
2.00
2.19
16.53
13.44
12.21
8.53
6.50
18.68
15.74
13.90
10.63
8.43
7.04
5.84
19.83
16.61
14.85
11.83
9.49
8.16
6.93
22.57
18.75
16.91
13.52
11.17
9.48
8.18
0.72
0.67
0.65
0.63
0.59
0.55
0.46
0.37
0.48
0.40
0.36
0.28
0.21
0.14
0.16
0.50
0.42
0.38
0.29
0.23
0.14
0.13
0.13
0.11
0.09
0.07
0.06
0.08
0.13
30
54
67
27
47
62
83
107
23
48
58
81
104
151
-167
21
39
48
74
91
135
177
19
48
67
100
143
-161
-133
1.00
0.65
0.55
0.56
0.39
0.36
0.34
0.28
0.28
0.25
0.24
0.21
0.20
0.18
0.13
0.26
0.26
0.25
0.24
0.22
0.20
0.12
0.27
0.26
0.25
0.24
0.22
0.20
0.16
NE68739
TYPICAL NOISE PARAMETERS
(T
A
= 25˚C)
FREQ.
(MHz)
NF
OPT
(dB)
G
A
(dB)
Γ
OPT
MAG
ANG
Rn/50
V
CE =
0.5 V
,
I
C =
0.5 mA
500
1.23
800
1.37
1000
1.45
V
CE =
1.0 V
,
I
C =
3.0 mA
500
800
1000
1500
2000
2500
1.07
1.13
1.18
1.30
1.50
1.66
15.7
10.9
8.7
18.0
14.8
13.2
10.5
8.0
7.0
18.6
15.5
14.0
11.2
9.3
7.8
6.6
21.2
17.6
16.0
12.9
10.6
9.0
7.7
0.77
0.71
0.60
0.48
0.39
0.32
0.23
0.12
0.16
0.46
0.37
0.32
0.20
0.12
0.14
0.23
0.08
0.14
0.16
0.21
0.26
0.31
0.46
36
46
64
30
49
60
76
120
-172
26
38
46
66
113
177
-157
-150
-138
-134
-127
-123
-121
-114
0.61
0.61
0.50
0.31
0.28
0.26
0.24
0.20
0.15
0.28
0.28
0.26
0.25
0.19
0.17
0.10
0.22
0.17
0.17
0.24
0.25
0.25
0.24
V
CE =
2.0 V
,
I
C =
3.0 mA
500
1.07
800
1.13
1000
1.18
1500
1.30
2000
1.50
2500
1.66
3000
1.86
V
CE =
2.0 V
,
I
C =
20.0 mA
500
800
1000
1500
2000
2500
3000
1.93
1.95
2.00
2.15
2.30
2.40
2.52
NE687 SERIES
TYPICAL PERFORMANCE CURVES
(TA = 25°)
NE68718, NE68730
D.C. POWER DERATING CURVE
150
150
NE68719
D.C. POWER DERATING CURVE
Total Power Dissipation, P
T
(mW)
100
90
Total Power Dissipation, P
T
(mW)
FREE AIR
FREE AIR
100
90
50
50
0
0
50
100
150
0
0
50
100
150
Ambient Temperature, T
A
(°C)
Ambient Temperature, T
A
(°C)
NE68733, NE68739
D.C. POWER DERATING CURVE
150
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
25
Total Power Dissipation, P
T
(mW)
FREE AIR
Collector Current, I
C
(mA)
20
200
µA
180
µA
160
µA
140
µA
120
µA
100
90
15
10
100
µA
80
µA
60
µA
40
µA
I
B
= 20
µA
50
5
0
0
50
100
150
0
0
2.2
2.4
2.6
Ambient Temperature, T
A
(°C)
Collector to Emitter Voltage, V
CE
(V)
NE687 SERIES
TYPICAL PERFORMANCE CURVES
(TA = 25°C)
NE68718
INSERTION GAIN vs.
COLLECTOR CURRENT
14
f = 2 GHz
NE68733
NOISE FIGURE vs.
COLLECTOR CURRENT
4
f = 2 GHz
Insertion Power Gain, |S
21e
|
2
(dB)
12
10
2V
V
CE
= 1 V
Noise Figure, NF (dB)
3
2
V
CE
= 1 V
V
CE
= 2 V
8
1
6
4
1
2
5
10
20 30
100
0
1
2
5
10
20
100
Collector Current, I
C
(mA)
Collector Current, I
C
(mA)
NE68718
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
16
f = 2 GHz
14
D.C. CURRENT GAIN vs.
COLLECTOR CURRENT
500
200
Gain Bandwidth Product, f
T
(GHz)
D.C. Current Gain, h
FE
12
10
2V
V
CE
= 1 V
100
V
CE
= 2 V
V
CE
= 1 V
50
8
6
20
4
2
10
1
2
5
10
20
50
100
1
2
5
10
20 30
50
100
Collector Current, I
C
(mA)
Collector Current, I
C
(mA)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
50
V
CE
= 2V
NE68730
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
0.6
f = 1 MHz
40
Feed-back Capacitance, C
RE
(pF)
0
0.5
1.0
Collector Current, I
C
(mA)
0.5
30
0.4
20
0.3
10
0.2
1.0
2.0
3.0
4.0
5.0
Base to Emitter Voltage, V
BE
(V)
Collector to Base Voltage, V
CB
(V)
NE687 SERIES
TYPICAL SCATTERING PARAMETERS
(T
A
= 25°C)
.8
.6
.4
3
.2
1
90˚
1.5
2
135˚
S
22
5 GHz
4
5
45˚
S
22
10
0.1 GHz
20
0
.2
.4
.6
.8
1
1.5
2
3
4 5
10 20
S
11
5 GHz
-.2
S
11
0.1 GHz
-20
-10
-5
-4
S
21
180˚ 5 GHz
S
12
0.1 GHz
S
21
0.1 GHz
0˚
S
12
5 GHz
315˚
-3
-.4
-2
-.6
-.8
-1
NE68718
V
CE
= 1.0 V, I
C
= 1.0 mA
-1.5
Coordinates in Ohms
Frequency in GHz
(V
CE
= 1 V, I
C
= 1 mA)
225˚
2.5
270˚
FREQUENCY
GHz
0.1
0.4
0.8
1.0
1.5
2.0
2.5
3.0
4.0
5.0
MAG
0.962
0.893
0.755
0.689
0.559
0.481
0.440
0.417
0.434
0.512
S
11
ANG
-8.100
-38.800
-73.500
-89.000
-124.000
-154.200
178.000
152.500
103.700
63.400
MAG
3.385
3.278
2.809
2.566
2.063
1.704
1.461
1.288
1.083
0.929
S
21
ANG
168.800
144.800
114.700
101.800
74.800
52.700
33.400
16.800
-13.500
-42.700
MAG
0.023
0.091
0.152
0.170
0.192
0.197
0.195
0.195
0.215
0.270
S
12
ANG
81.800
62.800
40.300
31.300
13.700
2.300
-5.200
-9.700
-14.400
-23.500
MAG
0.993
0.944
0.831
0.776
0.666
0.599
0.560
0.531
0.473
0.410
S
22
ANG
-6.700
-25.400
-45.900
-54.200
-71.100
-84.300
-96.200
-107.700
-133.500
-174.700
K
0.122
0.160
0.321
0.399
0.593
0.787
0.968
1.131
1.264
1.201
MAG
1
(dB)
21.678
15.566
12.667
11.788
10.312
9.370
8.746
5.997
3.931
2.658
V
CE
= 1.0 V, I
C
= 3.0 mA
0.1
0.4
0.8
1.0
1.5
2.0
2.5
3.0
4.0
5.0
0.872
0.710
0.501
0.438
0.354
0.321
0.312
0.311
0.361
0.461
-14.000
-60.600
-104.700
-122.100
-159.700
170.800
145.400
123.000
83.600
51.700
8.998
7.542
5.258
4.463
3.211
2.502
2.064
1.777
1.438
1.206
165.400
130.500
99.100
87.700
65.100
46.800
30.300
15.400
-12.600
-40.100
0.023
0.079
0.114
0.124
0.144
0.164
0.186
0.210
0.263
0.315
80.600
55.100
37.200
32.100
24.100
18.400
12.900
6.800
-7.700
-25.300
0.971
0.807
0.595
0.527
0.425
0.377
0.352
0.334
0.280
0.211
-11.300
-39.500
-61.600
-68.900
-82.000
-92.400
-101.800
-111.500
-136.000
177.500
0.117
0.288
0.543
0.653
0.875
1.025
1.112
1.160
1.163
1.140
25.924
19.799
16.639
15.562
13.483
10.866
8.414
6.851
4.930
3.560
V
CE
= 1.0 V, I
C
= 10.0 mA
0.1
0.4
0.8
1.0
1.5
2.0
2.5
3.0
4.0
5.0
0.645
0.392
0.270
0.252
0.234
0.234
0.235
0.242
0.300
0.414
-29.400
-95.800
-144.400
-161.700
164.600
140.600
121.100
103.100
73.800
47.400
21.295
12.537
7.101
5.792
3.980
3.042
2.489
2.127
1.705
1.421
155.400
110.900
85.100
76.200
58.000
42.500
27.900
14.200
-12.200
-38.700
0.019
0.055
0.085
0.100
0.136
0.174
0.212
0.249
0.318
0.374
74.200
55.600
50.500
48.600
42.200
34.400
25.600
16.000
-4.300
-25.800
0.892
0.541
0.347
0.303
0.249
0.226
0.215
0.207
0.161
0.141
-21.300
-57.100
-73.800
-79.000
-89.300
-98.900
-107.400
-117.800
-151.100
133.500
0.247
0.618
0.884
0.948
1.037
1.069
1.079
1.080
1.065
1.054
30.495
23.578
19.219
17.628
13.489
10.825
8.983
7.590
5.736
4.375
V
CE
= 2.0 V, I
C
= 3.0 mA
0.1
0.4
0.8
1.0
1.5
2.0
2.5
3.0
4.0
5.0
Note:
1.Gain Calculations:
MAG =
|S
21
|
|S
12
|
0.881
0.736
0.527
0.454
0.344
0.294
0.274
0.264
0.306
0.407
-12.200
-52.900
-92.900
-109.000
-144.400
-174.000
159.700
136.200
94.100
59.500
9.094
7.869
5.706
4.901
3.575
2.789
2.308
1.980
1.605
1.356
166.600
134.300
103.400
91.900
69.100
50.900
34.500
19.800
-7.800
-35.700
0.017
0.066
0.099
0.109
0.128
0.146
0.166
0.189
0.241
0.296
79.500
58.400
40.800
35.700
27.300
21.700
16.500
11.100
-2.400
-19.700
0.977
0.844
0.653
0.586
0.485
0.434
0.410
0.393
0.343
0.264
-9.600
-34.300
-54.800
-61.700
-74.400
-84.700
-94.000
-103.600
-126.700
-167.400
0.142
0.280
0.521
0.629
0.847
1.002
1.087
1.134
1.130
1.102
27.283
20.764
17.607
16.529
14.461
12.525
9.632
7.975
6.042
4.663
(
K
±
K
2
- 1
).
When K
≤
1, MAG is undefined and MSG values are used. MSG =
2
2
2
|S
21
|
, K = 1 + |
∆
| - |S
11
| - |S
22
|
,
∆
= S
11
S
22
- S
21
S
12
|S
12
|
2 |S
12
S
21
|
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
