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DATA SHEET
SILICON POWER MOS FET
NE5520379A
3.2 V OPERATION SILICON RF POWER LDMOS FET
FOR GSM/DCS DUAL-BAND PHONE TRANSMISSION AMPLIFIERS
DESCRIPTION
The NE5520379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier
for 3.2 V GSM 900 handsets. Dies are manufactured using our NEWMOS technology and housed in a surface mount
package. This device can deliver 34.6 dBm output power with 68% power efficiency at 915 MHz under the 2.8 V
supply voltage.
FEATURES
• High output power
: P
out
= 35.5 dBm TYP. (V
DS
= 3.2 V, V
GS
= 2.5 V, f = 915 MHz, P
in
= 25 dBm)
: P
out
= 33.0 dBm TYP. (V
DS
= 3.2 V, V
GS
= 2.5 V, f = 1 785 MHz, P
in
= 25 dBm)
• High power added efficiency :
η
add
= 65% TYP. (V
DS
= 3.2 V, V
GS
= 2.5 V, f = 915 MHz, P
in
= 25 dBm)
:
η
add
= 35% TYP. (V
DS
= 3.2 V, V
GS
= 2.5 V, f = 1 785 MHz, P
in
= 25 dBm)
• High linear gain
• Surface mount package
• Single supply
: G
L
= 16.0 dB TYP. (V
DS
= 3.2 V, V
GS
= 2.5 V, f = 915 MHz, P
in
= 10 dBm)
: G
L
= 8.5 dB TYP. (V
DS
= 3.2 V, V
GS
= 2.5 V, f = 1 785 MHz, P
in
= 10 dBm)
: 5.7
×
5.7
×
1.1 mm MAX.
: V
DS
= 2.8 to 6.0 V
APPLICATIONS
• Digital cellular phones
• Others
: 3.2 V GSM/DCS Dual-Band handsets
: General purpose amplifiers for 1.6 to 2.0 GHz TDMA applications
ORDERING INFORMATION
Part Number
NE5520379A-T1
Package
79A
Marking
A3
Supplying Form
• 12 mm wide embossed taping
• Gate pin face the perforation side of the tape
• Qty 1 kpcs/reel
• 12 mm wide embossed taping
• Gate pin face the perforation side of the tape
• Qty 5 kpcs/reel
NE5520379A-T1A
Remark
To order evaluation samples, contact your nearby sales office.
Part number for sample order: NE5520379A
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10122EJ03V0DS (3rd edition)
Date Published July 2003 CP(K)
Printed in Japan
The mark
shows major revised points.
NEC Compound Semiconductor Devices 2000, 2003
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