SURFACE MOUNT NPN SILICON
HIGH FREQUENCY TRANSISTOR
FEATURES
• LOW PHASE NOISE DISTORTION
• LOW NOISE:
1.5 dB at 2.0 GHz
• LOW VOLTAGE OPERATION
• LARGE ABSOLUTE MAXIMUM COLLECTOR
CURRENT:
I
C
MAX = 100 mA
• AVAILABLE IN SIX LOW COST PLASTIC SURFACE
MOUNT PACKAGE STYLES
• ALSO AVAILABLE IN CHIP FORM
18 (SOT 343 STYLE)
NE688
SERIES
19 (3 PIN ULTRA SUPER
MINI MOLD)
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NE 883 9
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NEC's NE688 series of NPN epitaxial silicon transistors are
designed for low cost amplifier and oscillator applications. Low
noise figures, high gain and high current capability equate to
wide dynamic range and excellent linearity. NE688's low
phase noise distortion and high fT make it an excellent choice
for oscillator applications up to 5 GHz. The NE688 series is
available in six different low cost plastic surface mount pack-
age styles, and in chip form.
30 (SOT 323 STYLE)
33 (SOT 23 STYLE)
39 (SOT 143 STYLE)
39R (SOT 143R STYLE)
(T
A
= 25°C)
EIAJ
2
REGISTERED
PART NUMBER
1
NUMBER
PACKAGE OUTLINE
NE68818
2SC5194
18
NE68819
2SC5195
19
NE68830
2SC5193
30
NE68833
2SC5191
33
f
T
f
T
NF
MIN
NF
MIN
|S
21E
|
|S
21E
|
h
FE
2
2
DESCRIPTION
NE68839/39R
2SC5192/92R
39
SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX
Gain Bandwidth Product at
V
CE
= 1V, I
C
= 3 mA, f = 2.0 GHz
Gain Bandwidth Product at
V
CE
= 3V, I
C
= 20 mA, f = 2.0 GHz
Minimum Noise Figure at
V
CE
= 1 V, I
C
= 3 mA, f = 2.0 GHz
Minimum Noise Figure at
V
CE
= 3 V, I
C
= 7 mA, f = 2.0 GHz
Insertion Power Gain at
V
CE
= 1V, I
C
= 3 mA, f = 2.0 GHz
Insertion Power Gain at
V
CE
= 3V, I
C
= 20 mA, f = 2.0 GHz
Forward Current Gain
3
at
V
CE
= 1 V, I
C
= 3 mA
Collector Cutoff Current
at V
CB
= 5 V, I
E
= 0 mA
Emitter Cutoff Current
at V
EB
= 1 V, I
C
= 0 mA
Feedback Capacitance at
V
CB
= 1 V, I
E
= 0 mA, f = 1 MHz
Total Power Dissipation
Thermal Resistance
(Junction to Ambient)
GHz
4
5
4.5
5
4
4.5
9
4
4.5
4
4.5
9
GHz
dB
10
9.5
8.5
1.7
2.5
1.7
2.5
1.7
2.5
1.7
2.5
1.7
2.5
dB
1.5
1.5
1.5
1.5
1.5
dB
3.0 4.0
3.0
4.0
8
2.5
3.5
2.5
3.5
4.0
4.5
9
dB
8.5
6.5
6.5
80
160
80
160
80
160
80
160
80
160
100
100
I
CBO
I
EBO
C
RE4
P
T
R
TH(J-A)
nA
nA
pF
mW
°C/W
100
100
0.65 0.8
150
833
0.7
100
100
0.8
125
1000
100
100
0.75 0.85
150
833
100
100
0.75 0.85
200
625
0.65 0.8
200
625
R
TH(J-C)
Thermal Resistance(Junction to Case)
°C/W
Notes:
1. Precaution: Devices are ESD sensitive. Use proper handling procedures.
2. Electronic Industrial Association of Japan.
3. Pulsed measurement, PW
≤
350
μs,
duty cycle
≤
2%.
4. The emitter terminal should be connected to the ground terminal of
the 3 terminal capacitance bridge.
California Eastern Laboratories
NE688 SERIES
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25°C)
SYMBOLS
V
CBO
V
CEO
V
EBO
I
C
T
J
T
STG
PARAMETERS
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Operating Junction
Temperature
Storage Temperature
UNITS
V
V
V
mA
°C
°C
RATINGS
9
6
2.0
100
150
-65 to +150
Notes:
1. Operation in excess of any one of these parameters may result
in permanent damage.
TYPICAL PERFORMANCE CURVES
(T
A
= 25°C)
NE68818, NE68830
D.C. POWER DERATING CURVE
200
150
NE68819
D.C. POWER DERATING CURVE
Free Air
Total Power Dissipation, P
T
(mW)
Free Air
Total Power Dissipation, P
T
(mW)
100
100
50
0
0
50
100
150
0
0
50
100
150
Ambient Temperature T
A
(°C)
Ambient Temperature T
A
(°C)
NE68833, NE68839
D.C. POWER DERATING CURVE
30
Free Air
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
200
μA
25
Total Power Dissipation, P
T
(mW)
200
Collector Current, I
C
(mA)
180
μA
160
μA
20
140
μA
120
μA
15
100
μA
80
μA
60
μA
100
10
5
40
μA
I
B
= 20
μA
0
0
50
100
150
0
0
2.5
5
7
Ambient Temperature T
A
(°C)
Collector to Emitter Voltage, V
CE
(V)
NE688 SERIES
TYPICAL PERFORMANCE CURVES
(TA = 25°C)
NE68833
INSERTION GAIN vs. COLLECTOR CURRENT
8
f = 2 GHz
V
CE
= 3 V
NE68833
NOISE FIGURE vs. COLLECTOR CURRENT
5
f = 2 GHz
4
Insertion Power Gain, |S
21e
|
2
(dB)
6
V
CE
= 1 V
Noise Figure, NF (dB)
3
4
V
CE
= 3 V
2
2
1
V
CE
= 1 V
0
1
2
5
10
20
50
100
0
1
2
5
10
20
50
100
Collector Current, I
C
(mA)
Collector Current, I
C
(mA)
D.C. CURRENT GAIN vs.
COLLECTOR CURRENT
200
V
CE
= 1 V
NE68839
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
10
f = 2 GHz
Gain Bandwidth Product, f
T
(GHz)
V
CE
= 3 V
8
V
CE
= 1 V
6
DC Current Gain, h
FE
100
4
2
0
0.1 0.2
0.5
1
2
5
10
20
50
100
0
1
2
5
10
20
50
100
Collector Current, I
C
(mA)
Collector Current, I
C
(mA)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
50
V
CE
= 1 V
NE68830
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
f = 1 MHz
Collector Current, I
C
(mA)
20
10
5
2
1
0.5
0.2
0.1
0.05
0.02
0.01
Feed-back Capacitance, C
RE
(pF)
1
1.0
0.5
0.1
0
0.5
1
5
10
20
Base to Emitter Voltage, V
BE
(V)
Collector to Base Voltage, V
CB
(V)
NE688 SERIES
TYPICAL SCATTERING PARAMETERS
(T
A
= 25°C)
.8
.6
.4
1
90˚
1.5
2
135˚
S
11
5 GHz
S
22
5 GHz
3
4
5
10
20
45˚
.2
0
.2
.4
.6
.8
1
1.5
2
3
4 5
10 20
S
22
0.1 GHz
-.2
-3
-.4
-2
-.6
-.8
-1
-1.5
S
21
180˚ 5 GHz
S
12
0.1 GHz
.25
0˚
S
12
5 GHz
-20
-10
S
11
-5
0.1 GHz
-4
S
21
0.1 GHz
1
Coordinates in Ohms
Frequency in GHz
(V
CE
= 0.5 V, I
C
= 0.5 mA)
225˚
270˚
315˚
NE68819
V
CE
= 0.5 V, I
C
= 0.5 mA
FREQUENCY
GHz
0.1
0.4
0.8
1.0
1.5
2.0
2.5
3.0
MAG
0.976
0.890
0.764
0.726
0.691
0.685
0.689
0.693
S
11
ANG
-16.300
-62.900
-108.300
-125.500
-159.300
174.200
150.800
129.200
MAG
1.892
1.635
1.250
1.098
0.859
0.715
0.618
0.554
S
21
ANG
164.300
125.300
86.900
72.100
43.500
22.600
6.500
-5.300
MAG
0.061
0.203
0.283
0.294
0.276
0.233
0.184
0.159
S
12
ANG
77.700
47.300
18.500
8.100
-10.800
-21.800
-23.000
-8.700
MAG
0.990
0.892
0.757
0.716
0.654
0.626
0.607
0.592
S
22
ANG
-9.700
-34.600
-56.300
-64.300
-81.500
-97.700
-115.400
-136.300
K
0.096
0.229
0.428
0.518
0.722
0.946
1.257
1.553
MAG
1
(dB)
14.916
9.060
6.451
5.723
4.931
4.870
2.208
1.042
V
CE
= 1.0 V, I
C
= 1.0 mA
0.1
0.4
0.8
1.0
1.5
2.0
2.5
3.0
4.0
5.0
0.955
0.846
0.705
0.666
0.624
0.612
0.610
0.612
0.633
0.660
-18.200
-68.100
-114.900
-132.000
-165.000
169.600
147.400
127.000
87.700
50.700
3.606
2.975
2.125
1.825
1.363
1.102
0.948
0.850
0.731
0.634
164.000
127.000
92.400
79.400
53.900
34.300
17.600
3.100
-22.000
-42.500
0.047
0.153
0.205
0.210
0.200
0.181
0.171
0.189
0.312
0.434
77.800
47.200
21.600
13.300
0.700
-3.100
1.400
9.500
7.300
-14.500
0.985
0.851
0.685
0.636
0.565
0.529
0.503
0.478
0.464
0.542
-10.600
-37.000
-58.000
-65.100
-79.600
-92.900
-107.600
-125.400
-175.100
135.800
0.083
0.197
0.384
0.480
0.727
1.002
1.241
1.295
1.058
1.022
18.849
12.888
10.156
9.390
8.335
7.576
4.481
3.271
2.229
0.747
V
CE
= 3.0 V, I
C
= 3.0 mA
0.1
0.4
0.8
1.0
1.5
2.0
2.5
3.0
4.0
5.0
0.902
0.706
0.558
0.528
0.496
0.484
0.480
0.485
0.518
0.579
-25.000
-86.100
-133.100
-148.700
-177.500
161.200
142.700
125.800
91.200
56.600
9.548
6.729
4.185
3.477
2.465
1.924
1.613
1.425
1.187
0.985
160.300
119.100
89.200
78.800
57.900
40.800
25.100
10.500
-17.200
-43.600
0.035
0.098
0.123
0.129
0.143
0.162
0.189
0.224
0.313
0.396
75.900
44.700
29.300
26.300
23.100
22.300
21.100
17.800
4.600
-14.900
0.964
0.708
0.500
0.448
0.383
0.349
0.324
0.295
0.256
0.342
-15.500
-47.700
-66.200
-71.400
-80.700
-89.300
-98.900
-112.300
-159.100
147.600
0.085
0.288
0.552
0.673
0.911
1.068
1.127
1.115
1.030
0.973
24.358
18.367
15.318
14.306
12.365
9.158
7.147
5.973
4.721
3.957
V
CE
= 3.0 V, I
C
= 7.0 mA
0.1
0.4
0.8
1.0
1.5
2.0
2.5
3.0
4.0
5.0
Note:
1.Gain Calculations:
MAG =
|S
21
|
|S
12
|
0.786
0.542
0.450
0.434
0.420
0.411
0.410
0.413
0.460
0.533
-39.600
-113.500
-156.200
-169.300
167.100
149.700
134.000
120.000
89.000
54.800
18.403
9.834
5.452
4.445
3.072
2.376
1.974
1.726
1.412
1.176
151.700
106.700
82.100
73.700
55.700
40.500
25.900
12.000
-14.800
-40.600
0.031
0.073
0.097
0.109
0.143
0.180
0.220
0.262
0.347
0.413
72.000
44.700
40.800
40.500
38.100
33.900
27.700
19.900
1.500
-18.700
0.903
0.506
0.320
0.281
0.231
0.203
0.179
0.154
0.137
0.255
-25.500
-65.400
-82.200
-86.600
-93.200
-99.000
-106.000
-119.300
177.100
127.900
0.118
0.487
0.797
0.894
1.016
1.069
1.078
1.067
1.024
0.996
27.735
21.294
17.498
16.104
12.550
9.601
7.824
6.606
5.143
4.545
(
K
±
K
2
- 1
).
When K
≤
1, MAG is undefined and MSG values are used. MSG =
2
2
2
|S
21
|
, K = 1 + |
Δ
| - |S
11
| - |S
22
|
,
Δ
= S
11
S
22
- S
21
S
12
|S
12
|
2 |S
12
S
21
|
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
NE688 SERIES
TYPICAL SCATTERING PARAMETERS
(T
A
= 25°C)
NE68819
V
CE
= 3.0 V, I
C
= 20 mA
FREQUENCY
GHz
0.1
0.4
0.8
1.0
1.5
2.0
2.5
3.0
4.0
5.0
MAG
0.538
0.385
0.358
0.352
0.345
0.335
0.334
0.334
0.396
0.483
S
11
ANG
-68.800
-146.900
-179.500
170.400
152.000
137.400
124.900
112.100
83.800
50.200
MAG
32.261
11.973
6.233
5.038
3.447
2.649
2.189
1.904
1.544
1.294
S
21
ANG
136.000
94.900
76.200
69.100
53.400
39.400
25.600
12.300
-13.400
-38.000
MAG
0.023
0.053
0.090
0.109
0.157
0.206
0.255
0.302
0.390
0.453
S
12
ANG
64.800
57.300
57.600
56.000
49.400
41.200
32.000
22.000
0.900
-20.200
MAG
0.741
0.302
0.191
0.169
0.139
0.120
0.101
0.081
0.100
0.236
S
22
ANG
-42.000
-81.000
-94.800
-98.300
-102.200
-104.900
-108.700
-124.300
147.600
112.500
K
0.322
0.818
0.984
1.014
1.040
1.048
1.041
1.036
1.012
0.997
MAG
1
(dB)
31.469
23.539
18.405
15.931
12.192
9.756
8.090
6.829
5.314
4.558
V
CE
= 5.0 V, I
C
= 10 mA
0.1
0.4
0.8
1.0
1.5
2.0
2.5
3.0
4.0
5.0
Note:
1.Gain Calculations:
MAG =
|S
21
|
|S
12
|
0.717
0.466
0.383
0.371
0.356
0.349
0.346
0.349
0.403
0.485
-44.700
-119.600
-161.000
-173.600
163.800
146.600
131.700
118.200
87.800
53.100
22.801
10.924
5.912
4.804
3.304
2.545
2.110
1.842
1.503
1.262
147.800
103.000
80.300
72.300
55.300
40.600
26.300
12.700
-13.400
-38.900
0.029
0.063
0.093
0.108
0.149
0.192
0.237
0.282
0.369
0.437
68.600
49.200
48.100
47.600
43.800
37.800
30.200
21.500
1.900
-18.800
0.867
0.442
0.279
0.246
0.206
0.183
0.163
0.140
0.113
0.229
-28.800
-67.400
-81.500
-84.900
-89.800
-94.100
-99.400
-111.400
-179.400
127.200
0.210
0.609
0.886
0.954
1.029
1.055
1.055
1.045
1.015
0.992
28.956
22.390
18.033
16.482
12.415
9.785
8.057
6.851
5.349
4.606
(
K
±
K
2
- 1
).
When K
≤
1, MAG is undefined and MSG values are used. MSG =
2
2
2
|S
21
|
, K = 1 + |
Δ
| - |S
11
| - |S
22
|
,
Δ
= S
11
S
22
- S
21
S
12
|S
12
|
2 |S
12
S
21
|
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
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