MCR100 Series
Sensitive Gate
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
PNPN devices designed for high volume, line-powered consumer
applications such as relay and lamp drivers, small motor controls, gate
drivers for larger thyristors, and sensing and detection circuits.
Supplied in an inexpensive plastic TO-226AA package which is
readily adaptable for use in automatic insertion equipment.
Features
http://onsemi.com
SCRs
0.8 A RMS
100 thru 600 V
G
A
K
•
Sensitive Gate Allows Triggering by Microcontrollers and Other
•
•
•
•
•
•
•
Logic Circuits
Blocking Voltage to 600 V
On−State Current Rating of 0.8 A RMS at 80°C
High Surge Current Capability
−
10 A
Minimum and Maximum Values of IGT, VGT and IH Specified
for Ease of Design
Immunity to dV/dt
−
20 V/msec Minimum at 110°C
Glass-Passivated Surface for Reliability and Uniformity
Pb−Free Packages are Available*
TO−92
CASE 29
STYLE 10
12
1
2
3
STRAIGHT LEAD
BULK PACK
3
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAM
MCR
100−x
AYWWG
G
x
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
1
2
3
Cathode
Gate
Anode
ORDERING INFORMATION
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2010
See detailed ordering and shipping information on page 5 of
this data sheet.
February, 2010
−
Rev. 10
1
Publication Order Number:
MCR100/D
MCR100 Series
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Peak Repetitive Off−State Voltage (Notes 1 and 2)
(T
J
=
*40
to 110°C, Sine Wave, 50 to 60 Hz; R
GK
= 1 kW)
Symbol
V
DRM,
V
RRM
Value
Unit
V
100
200
400
600
0.8
10
0.415
0.1
0.01
1.0
5.0
−40
to 110
−40
to 150
A
A
A
2
s
W
W
A
V
°C
°C
MCR100−3
MCR100−4
MCR100−6
MCR100−8
On-State RMS Current, (T
C
= 80°C) 180° Conduction Angles
Peak Non-Repetitive Surge Current, (1/2 Cycle, Sine Wave, 60 Hz, T
J
= 25°C)
Circuit Fusing Consideration, (t = 8.3 ms)
Forward Peak Gate Power, (T
A
= 25°C, Pulse Width
v
1.0
m
s)
Forward Average Gate Power, (T
A
= 25°C, t = 8.3 ms)
Forward Peak Gate Current, (T
A
= 25°C, Pulse Width
v
1.0
m
s)
Reverse Peak Gate Voltage, (T
A
= 25°C, Pulse Width
v
1.0
m
s)
Operating Junction Temperature Range @ Rate V
RRM
and V
DRM
Storage Temperature Range
I
T(RMS)
I
TSM
I
2
t
P
GM
P
G(AV)
I
GM
V
GRM
T
J
T
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
2. See ordering information for exact device number options.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,Junction−to−Case
Junction−to−Ambient
Lead Solder Temperature
(t1/16″ from case, 10 secs max)
Symbol
R
qJC
R
qJA
T
L
Max
75
200
260
Unit
°C/W
°C
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
Symbol
I
DRM
, I
RRM
Min
Typ
Max
Unit
mA
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current (Note 3)
T
C
= 25°C
(V
D
= Rated V
DRM
and V
RRM
; R
GK
= 1 kW)
T
C
= 110°C
−
−
−
−
−
−
−
−
−
−
20
−
−
−
−
40
0.5
−
0.6
−
0.62
−
35
−
10
100
1.7
200
5.0
10
10
15
0.8
1.2
−
50
ON CHARACTERISTICS
Peak Forward On−State Voltage
*
(I
TM
= 1.0 A Peak @ T
A
= 25°C)
Gate Trigger Current (Note 4)
(V
AK
= 7.0 Vdc, R
L
= 100
W)
T
C
= 25°C
V
TM
I
GT
I
H
I
L
V
GT
V
mA
mA
mA
V
Holding Current (Note 3)
T
C
= 25°C
(V
AK
= 7.0 Vdc, Initiating Current = 20 mA, R
GK
= 1 kW) T
C
=
−40°C
Latch Current (Note 4)
(V
AK
= 7.0 V, Ig = 200
mA)
Gate Trigger Voltage (Note 4)
(V
AK
= 7.0 Vdc, R
L
= 100
W)
T
C
= 25°C
T
C
=
−40°C
T
C
= 25°C
T
C
=
−40°C
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off−State Voltage
(V
D
= Rated V
DRM
, Exponential Waveform, R
GK
= 1 kW,T
J
= 110°C)
Critical Rate of Rise of On−State Current
(I
PK
= 20 A; Pw = 10
msec;
diG/dt = 1 A/msec, Igt = 20 mA)
*Indicates Pulse Test: Pulse Width
≤
1.0 ms, Duty Cycle
≤
1%.
3. R
GK
= 1000
W
included in measurement.
4. Does not include R
GK
in measurement.
dV/dt
di/dt
V/ms
A/ms
http://onsemi.com
2
MCR100 Series
Voltage Current Characteristic of SCR
+ Current
Anode +
V
TM
on state
I
RRM
at V
RRM
I
H
Symbol
V
DRM
I
DRM
V
RRM
I
RRM
V
TM
I
H
Parameter
Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak on State Voltage
Holding Current
Reverse Blocking Region
(off state)
Reverse Avalanche Region
Anode
−
+ Voltage
I
DRM
at V
DRM
Forward Blocking Region
(off state)
100
GATE TRIGGER VOLTAGE (VOLTS)
95
90
GATE TRIGGER CURRENT (
m
A)
80
70
60
50
40
30
20
10
−40 −25 −10
5
20 35 50 65 80
T
J
, JUNCTION TEMPERATURE (°C)
110
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
−40 −25 −10
5
20 35 50
65 80
T
J
, JUNCTION TEMPERATURE (°C)
95
110
Figure 1. Typical Gate Trigger Current versus
Junction Temperature
Figure 2. Typical Gate Trigger Voltage versus
Junction Temperature
http://onsemi.com
3
MCR100 Series
1000
1000
100
LATCHING CURRENT (
m
A)
95
110
HOLDING CURRENT (
m
A)
100
10
−40 −25 −10
5
20 35 50 65 80
T
J
, JUNCTION TEMPERATURE (°C)
10
−40 −25 −10
5
20 35 50 65 80
T
J
, JUNCTION TEMPERATURE (°C)
95
110
Figure 3. Typical Holding Current versus
Junction Temperature
Figure 4. Typical Latching Current versus
Junction Temperature
TC, MAXIMUM ALLOWABLE CASE TEMPERATURE (
°
C)
I T, INSTANTANEOUS ON-STATE CURRENT (AMPS)
120
110
100
90
80
70
60
50
40
0
0.1
30°
60°
90°
120°
0.5
180°
DC
10
MAXIMUM @ T
J
= 25°C
MAXIMUM @ T
J
= 110°C
1
0.2
0.3
0.4
I
T(RMS)
, RMS ON-STATE CURRENT (AMPS)
0.1
0.5 0.8 1.1 1.4 1.7 2.0 2.3 2.6 2.9 3.2 3.5
V
T
, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
Figure 5. Typical RMS Current Derating
Figure 6. Typical On−State Characteristics
http://onsemi.com
4
MCR100 Series
ORDERING INFORMATION
Device
MCR100−003
MCR100−004
MCR100−006
MCR100−008
MCR100−3RL
MCR100−6RL
MCR100−6RLRA
MCR100−6RLRM
MCR100−6ZL1
MCR100−8RL
MCR100−3G
MCR100−4G
MCR100−6G
MCR100−8G
MCR100−3RLG
MCR100−6RLG
MCR100−6RLRAG
MCR100−4RLRMG
MCR100−6RLRMG
MCR100−6ZL1G
MCR100−8RLG
2000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
2000 / Tape & Ammo Pack
TO−92 (TO−226)
(Pb−Free)
2000 / Tape & Reel
5000 Units / Box
2000 / Tape & Ammo Pack
2000 / Tape & Reel
TO−92 (TO−226)
5000 Units / Box
Package Code
Shipping
†
2000 / Tape & Reel
http://onsemi.com
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
