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“Standard”:
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(Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majority-
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(Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.
DATA SHEET
NPN SILICON GERMANIUM RF TRANSISTOR
NESG2021M05
NPN SiGe RF TRANSISTOR FOR
LOW NOISE, HIGH-GAIN AMPLIFICATION
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05)
FEATURES
• The device is an ideal choice for low noise, high-gain at low current amplifications
NF = 0.9 dB TYP., G
a
= 18.0 dB TYP. @ V
CE
= 2 V, I
C
= 3 mA, f = 2 GHz
NF = 1.3 dB TYP., G
a
= 10.0 dB TYP. @ V
CE
= 2 V, I
C
= 3 mA, f = 5.2 GHz
• Maximum stable power gain: MSG = 22.5 dB TYP. @ V
CE
= 3 V, I
C
= 10 mA, f = 2 GHz
• High breakdown voltage technology for SiGe Tr. adopted: V
CEO
(absolute maximum ratings) = 5.0 V
• Flat-lead 4-pin thin-type super minimold (M05) package
ORDERING INFORMATION
Part Number
NESG2021M05
NESG2021M05-T1
Quantity
50 pcs (Non reel)
3 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 3 (Collector), Pin 4 (Emitter) face the perforation side of the tape
Remark
To order evaluation samples, contact your nearby sales office.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
°
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
Note
Ratings
13.0
5.0
1.5
35
175
150
−65
to +150
Unit
V
V
V
mA
mW
°C
°C
T
j
T
stg
2
Note
Mounted on 1.08 cm
×
1.0 mm (t) glass epoxy PCB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10188EJ02V0DS (2nd edition)
Date Published March 2003 CP(K)
Printed in Japan
The mark
•
shows major revised points.
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NEC Compound Semiconductor Devices 2002, 2003
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