THIS DOCUMENT IS FOR MAINTENANCE
PURPOSES ONLY AND IS NOT
RECOMMENDED FOR NEW DESIGNS
MA5101
MARCH 1995
DS3579-3.2
MA5101
RADIATION HARD 256 x 4 BIT STATIC RAM
The MA5101 1k Static RAM is configured as 256 x 4 bits and
manufactured using CMOS-SOS high performance, radiation hard,
3µm technology.
The design uses a 6 transistor cell and has full static operation with
no clock or timing strobe required. Address input buffers are deselected
when CE is in the low state and minimum standby current is drawn.
FEATURES
s
3µm CMOS-SOS Technology
s
Latch-up Free
s
Fast Access Time 90ns Typical
s
Total Dose 10
6
Rad(Si)
s
Transient Upset >10
10
Rad(Si)/sec
s
SEU <10
-10
Errors/bitday
s
Single 5V Supply
s
Three State Output
s
Low Standby Current 10µA Typical
s
-55°C to +125°C Operation
Operation Mode
Read
Write
Output Disable
Standby
CS
L
L
L
H
X
CE
H
H
H
X
L
OE WE
L
X
H
X
X
H
L
H
X
X
I/O
D OUT
D IN
High Z
High Z
X
Power
ISB1
ISB2
s
All Inputs and Outputs Fully TTL or CMOS
Compatible
s
Fully Static Operation
Figure 1: Truth Table
CE
CS
WE
D11
D12
D13
D14
OE
Figure 2: Block Diagram
1
MA5101
CHARACTERISTICS AND RATINGS
Symbol
V
CC
V
I
T
A
T
S
Parameter
Supply Voltage
Input Voltage
Operating Temperature
Storage Temperature
Min.
-0.5
-0.3
-55
-65
Max.
7
V
DD
+0.3
125
150
Units
V
V
°C
°C
Stresses above those listed may cause permanent
damage to the device. This is a stress rating only and
functlonal operation of the device at these condltions,
or at any other condition above those indicated in the
operations section of this specification, is not Implied
Exposure to absolute maxlmum rating conditions for
extended perlods may affect device reliability.
Figure 3: Absolute Maximum Ratings
Notes for Tables 4 and 5:
1. Characteristics apply to pre radiation at T
A
= -55°C to +125°C with V
DD
= 5V ±10% and to post 100k Rad(Si) total dose
radiation at T
A
= 25°C with V
DD
= 5V ±10% (characteristics at higher radiation levels available on request).
2. Worst case at T
A
= +125°C, guaranteed but not tested at T
A
= -55°C.
GROUP A SUBGROUPS 1, 2, 3.
Symbol
V
DD
V
lH
V
lL
V
OH
V
OL
I
LI
I
LO
I
DD
Parameter
Supply voltage
Input High Voltage
Input Low Voltage
Output High Voltage
Output Low Voltage
Input Leakage Current (note 2)
Output Leakage Current (note 2)
Dynamic Operating Current
Conditions
-
-
-
I
OH1
= -1mA
I
OL
= 2mA
V
IN
= V
DD
or V
SS
all inputs
= V
DD
/2, V
OUT
= 0 to V
DD
CS
= V
IL
, f
RC
= 1MHz, CE, A
0-7
switching, outputs open, all other
inputs V
DD
CE = 0.2V
CS
= V
SS
, CE = V
DD
- 0.2V
Figure 4: Electrical Characteristics
Min.
4.5
V
DD
/2
V
SS
2.4
-
-
-
-
Typ.
5.0
-
-
-
-
-
-
10
Max.
5.5
V
DD
0.8
-
0.4
±10
±20
15
Units
V
V
V
V
V
µA
µA
mA
I
SB
I
SB
Standby Supply Current
Selected Supply Current
-
-
10
20
1000
30
µA
mA
Symbol
V
DR
I
DDR
Parameter
V
CC
for Data Retention
Data Retention Current
Conditions
CE = V
SS
CE = V
SS
, V
DR
= 2.0V
Figure 5: Data Retention Characteristics
Min.
2.0
-
Typ.
-
5
Max.
-
750
Units
V
µA
2
MA5101
AC CHARACTERISTICS
Conditions of Test for Tables 5 and 6:
1. Input pulse = V
SS
to 3.0V.
2. Times measurement reference level = 1.5V.
3. Input Rise and Fall times
≤5ns.
4. Output load 1TTL gate and CL = 60pF.
5. Transition is measured at ±500mV from steady state.
6. This parameter is sampled and not 100% tested.
Notes for Tables 6 and 7:
Characteristics apply to pre-radiation at T
A
= -55°C to +125°C with V
DD
= 5V±10% and to post 100k
Rad(Si) total dose radiation at T
A
= 25°C with V
DD
= 5V ±10%. GROUP A SUBGROUPS 9, 10, 11.
Symbol
T
AVAVR
T
AVQV
T
EHQV
T
SLQV
T
EHQX
(5,6)
T
SLQX
(5,6)
T
ELQZ
(5,6)
T
SHQZ
(5,6)
T
AXQX
T
GLQV
T
GLQX
(5,6)
T
GHQZ
(5,6)
Parameter
Read Cycle Time
Address Access Time
Chip Select Access Time
Chip Enable Access Time
Chip Selection to Output in Low Z
Chip Enable to Output in Low Z
Chip Deselection to Output in High Z
Chip Disable to Output in High Z
Output Hold from Address Change
Output Enable Access Time
Output Enable to Output in Low Z
Output Enable to Output in High Z
Figure 6: Read Cycle AC Electrical Characteristics
Min
140
-
-
-
10
10
0
0
10
-
10
0
Max
-
130
140
140
-
-
60
60
-
70
-
60
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Symbol
T
AVAVW
T
EHWH
T
SLWH
T
AVWH
T
AVWL
T
WLWH
T
WHAV
T
WLQZ
(5,6)
T
DVWH
T
WHDX
T
WHQX
(5,6)
T
EHWL
T
SLWL
Parameter
Write Cycle Tlme
Chip Selection to End of Write
Chip Enable to End of Write
Address Valid to End of Write
Address Set Up Time
Write Pulse Width
Write Recovery Time
Wnte to Output in High Z
Data to Write Time Overlap
Data Hold from Write
Output Active from End to Write
Chip Enable to Write Low
Chip Selection to Write Low
Figure 7: Write Cycle AC Electrical Characteristics
Min
140
80
80
80
20
50
5
0
30
10
5
25
25
Max
-
-
-
-
-
-
-
60
-
-
-
-
-
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
3
MA5101
Symbol
C
IN
C
OUT
Parameter
Input Capacitance
Output Capacitance
Conditions
V
l
= 0V
V
I/O
= 0V
Min.
-
-
Typ.
6
8
Max.
10
12
Units
pF
pF
Note: T
A
= 25°C and f = 1MHz. Data obtained by characterisation or analysis; not routinely measured.
Figure 8: Capacitance
Symbol
F
T
Parameter
Basic Functionality
Conditions
V
DD
= 4.5V - 5.5V, FREQ = 1MHz
V
IL
= V
SS
, V
IH
= V
DD
, V
OL
≤
1.5V, V
OH
≥
1.5V
TEMP = -55°C to +125°C, GPS PATTERN SET
GROUP A SUBGROUPS 7, 8A, 8B
Figure 9: Functionality
Subgroup
1
2
3
7
8A
8B
9
10
11
Definition
Static characteristics specified in Tables 4 and 5 at +25°C
Static characteristics specified in Tables 4 and 5 at +125°C
Static characteristics specified in Tables 4 and 5 at -55°C
Functional characteristics specified in Table 9 at +25°C
Functional characteristics specified in Table 9 at +125°C
Functional characteristics specified in Table 9 at -55°C
Switching characteristics specified in Tables 6 and 7 at +25°C
Switching characteristics specified in Tables 6 and 7 at +125°C
Switching characteristics specified in Tables 6 and 7 at -55°C
Figure 10: Definition of Subgroups
4
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