Datasheet> 器件分类 > 分立半导体> 晶体管> NE721S01-T1BK

NE721S01-T1BK: 产品描述RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, PLASTIC PACKAGE-4; 产品类别分立半导体晶体管; 文件大小174KB，共12页; 制造商NEC(日电)

下载文档详细参数选型对比全文预览

NE721S01-T1BK概述

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, PLASTIC PACKAGE-4

NE721S01-T1BK规格参数

参数名称	属性值
厂商名称	NEC(日电)
包装说明	DISK BUTTON, O-PRDB-F4
针数	4
Reach Compliance Code	unknown
外壳连接	SOURCE
配置	SINGLE
最小漏源击穿电压	5 V
FET 技术	METAL SEMICONDUCTOR
最高频带	X BAND
JESD-30 代码	O-PRDB-F4
元件数量	1
端子数量	4
工作模式	DEPLETION MODE
封装主体材料	PLASTIC/EPOXY
封装形状	ROUND
封装形式	DISK BUTTON
极性/信道类型	N-CHANNEL
认证状态	Not Qualified
表面贴装	YES
端子形式	FLAT
端子位置	RADIAL
晶体管应用	AMPLIFIER
晶体管元件材料	GALLIUM ARSENIDE

文档预览

下载PDF文档

全文
预览

NE721S01-T1BK相似产品对比

	NE721S01-T1BK	NE721S01-T1K	NE721S01-T1BN	NE721S01-T1BM	NE721S01-T1M	NE721S01-T1N
描述	RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, PLASTIC PACKAGE-4	RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, PLASTIC PACKAGE-4	RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, PLASTIC PACKAGE-4	RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, PLASTIC PACKAGE-4	RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, PLASTIC PACKAGE-4	RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, PLASTIC PACKAGE-4
包装说明	DISK BUTTON, O-PRDB-F4	DISK BUTTON, O-PRDB-F4	DISK BUTTON, O-PRDB-F4	DISK BUTTON, O-PRDB-F4	DISK BUTTON, O-PRDB-F4	DISK BUTTON, O-PRDB-F4
针数	4	4	4	4	4	4
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
外壳连接	SOURCE	SOURCE	SOURCE	SOURCE	SOURCE	SOURCE
配置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
最小漏源击穿电压	5 V	5 V	5 V	5 V	5 V	5 V
FET 技术	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR
最高频带	X BAND	X BAND	X BAND	X BAND	X BAND	X BAND
JESD-30 代码	O-PRDB-F4	O-PRDB-F4	O-PRDB-F4	O-PRDB-F4	O-PRDB-F4	O-PRDB-F4
元件数量	1	1	1	1	1	1
端子数量	4	4	4	4	4	4
工作模式	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
封装形式	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON
极性/信道类型	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	YES	YES	YES	YES	YES	YES
端子形式	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT
端子位置	RADIAL	RADIAL	RADIAL	RADIAL	RADIAL	RADIAL
晶体管应用	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
晶体管元件材料	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE
厂商名称	NEC(日电)	-	NEC(日电)	NEC(日电)	NEC(日电)	NEC(日电)

推荐资源

器件捷径: E0 E1 E2 E3 E4 E5 E6 E7 E8 E9 EA EB EC ED EE EF EG EH EI EJ EK EL EM EN EO EP EQ ER ES ET EU EV EW EX EY EZ F0 F1 F2 F3 F4 F5 F6 F7 F8 F9 FA FB FC FD FE FF FG FH FI FJ FK FL FM FN FO FP FQ FR FS FT FU FV FW FX FY FZ G0 G1 G2 G3 G4 G5 G6 G7 G8 G9 GA GB GC GD GE GF GG GH GI GJ GK GL GM GN GO GP GQ GR GS GT GU GV GW GX GZ H0 H1 H2 H3 H4 H5 H6 H7 H8 HA HB HC HD HE HF HG HH HI HJ HK HL HM HN HO HP HQ HR HS HT HU HV HW HX HY HZ I1 I2 I3 I4 I5 I6 I7 IA IB IC ID IE IF IG IH II IK IL IM IN IO IP IQ IR IS IT IU IV IW IX J0 J1 J2 J6 J7 JA JB JC JD JE JF JG JH JJ JK JL JM JN JP JQ JR JS JT JV JW JX JZ K0 K1 K2 K3 K4 K5 K6 K7 K8 K9 KA KB KC KD KE KF KG KH KI KJ KK KL KM KN KO KP KQ KR KS KT KU KV KW KX KY KZ

热门器件

开源项目推荐更多

热门活动更多

热门文章更多

技术资料推荐更多