MUN5335DW1,
NSBC123JPDXV6,
NSBC123JPDP6
Complementary Bias
Resistor Transistors
R1 = 2.2 kW, R2 = 47 kW
NPN and PNP Transistors with Monolithic
Bias Resistor Network
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base-emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space.
Features
(3)
R
1
Q
1
Q
2
R
2
(4)
(5)
R
1
(6)
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PIN CONNECTIONS
(2)
R
2
(1)
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
S and NSV Prefix for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AEC-Q101 Qualified and PPAP Capable
These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(T
A
= 25C both polarities Q
1
(PNP) & Q
2
(NPN), unless otherwise noted)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
−
Continuous
Input Forward Voltage
Input Reverse Voltage
Symbol
V
CBO
V
CEO
I
C
V
IN(fwd)
V
IN(rev)
Max
50
50
100
12
5
Unit
Vdc
Vdc
mAdc
Vdc
Vdc
MARKING DIAGRAMS
6
SOT−363
CASE 419B
1
35 M
G
G
SOT−563
CASE 463A
1
35 M
G
G
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1
ORDERING INFORMATION
Device
MUN5335DW1T1G,
SMUN5335DW1T1G
MUN5335DW1T2G,
SMUN5335DW1T2G
NSBC123JPDXV6T1G,
NSVB123JPDXV6T1G
NSBC123JPDXV6T5G
NSBC123JPDP6T5G
Package
SOT−363
SOT−363
SOT−563
SOT−563
SOT−963
Shipping
†
3,000/Tape & Reel
3,000/Tape & Reel
4,000/Tape & Reel
8,000/Tape & Reel
8,000/Tape & Reel
35/D
M
G
= Specific Device Code
= Date Code*
= Pb-Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
†For information on tape and reel specifications, including part orientation and
tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Semiconductor Components Industries, LLC, 2012
September, 2012
−
Rev. 0
1
Publication Order Number:
DTC123JP/D
D
SOT−963
CASE 527AD
M
G
G
MUN5335DW1, NSBC123JPDXV6, NSBC123JPDP6
THERMAL CHARACTERISTICS
Characteristic
MUN5335DW1 (SOT−363) ONE JUNCTION HEATED
Total Device Dissipation
T
A
= 25C
Derate above 25C
Thermal Resistance,
Junction to Ambient
MUN5335DW1 (SOT−363) BOTH JUNCTION HEATED
(Note 3)
Total Device Dissipation
T
A
= 25C
Derate above 25C
Thermal Resistance,
Junction to Ambient
Thermal Resistance,
Junction to Lead
Junction and Storage Temperature Range
NSBC123JPDXV6 (SOT−563) ONE JUNCTION HEATED
Total Device Dissipation
T
A
= 25C
Derate above 25C
Thermal Resistance,
Junction to Ambient
NSBC123JPDXV6 (SOT−563) BOTH JUNCTION HEATED
(Note 3)
Total Device Dissipation
T
A
= 25C
Derate above 25C
Thermal Resistance,
Junction to Ambient
Junction and Storage Temperature Range
NSBC123JPDP6 (SOT−963) ONE JUNCTION HEATED
Total Device Dissipation
T
A
= 25C
Derate above 25C
Thermal Resistance,
Junction to Ambient
NSBC123JPDP6 (SOT−963) BOTH JUNCTION HEATED
(Note 3)
Total Device Dissipation
T
A
= 25C
Derate above 25C
Thermal Resistance,
Junction to Ambient
Junction and Storage Temperature Range
1.
2.
3.
4.
5.
FR−4 @ Minimum Pad.
FR−4 @ 1.0
1.0 Inch Pad.
Both junction heated values assume total power is sum of two equally powered channels.
FR−4 @ 100 mm
2
, 1 oz. copper traces, still air.
FR−4 @ 500 mm
2
, 1 oz. copper traces, still air.
(Note 4)
(Note 5)
(Note 4)
(Note 5)
(Note 4)
(Note 5)
P
D
339
408
2.7
3.3
369
306
−55
to +150
MW
mW/C
C/W
(Note 4)
(Note 5)
(Note 4)
(Note 5)
(Note 4)
(Note 5)
P
D
231
269
1.9
2.2
540
464
MW
mW/C
C/W
(Note 1)
(Note 1)
(Note 1)
P
D
500
4.0
250
−55
to +150
mW
mW/C
C/W
C
(Note 1)
(Note 1)
(Note 1)
P
D
357
2.9
350
mW
mW/C
C/W
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
P
D
250
385
2.0
3.0
493
325
188
208
−55
to +150
mW
mW/C
C/W
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
P
D
187
256
1.5
2.0
670
490
mW
mW/C
C/W
Symbol
Max
Unit
R
qJA
R
qJA
R
qJL
C/W
T
J
, T
stg
C
R
qJA
R
qJA
T
J
, T
stg
R
qJA
R
qJA
T
J
, T
stg
C
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2
MUN5335DW1, NSBC123JPDXV6, NSBC123JPDP6
ELECTRICAL CHARACTERISTICS
(T
A
= 25C both polarities Q
1
(PNP) & Q
2
(NPN), unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector-Base Cutoff Current
(V
CB
= 50 V, I
E
= 0)
Collector-Emitter Cutoff Current
(V
CE
= 50 V, I
B
= 0)
Emitter-Base Cutoff Current
(V
EB
= 6.0 V, I
C
= 0)
Collector-Base Breakdown Voltage
(I
C
= 10
mA,
I
E
= 0)
Collector-Emitter Breakdown Voltage (Note 6)
(I
C
= 2.0 mA, I
B
= 0)
ON CHARACTERISTICS
DC Current Gain (Note 6)
(I
C
= 5.0 mA, V
CE
= 10 V)
Collector-Emitter Saturation Voltage (Note 6)
(I
C
= 10 mA, I
B
= 0.3 mA)
Input Voltage (Off)
(V
CE
= 5.0 V, I
C
= 100
mA)
(NPN)
(V
CE
= 5.0 V, I
C
= 100
mA)
(PNP)
Input Voltage (On)
(V
CE
= 0.2 V, I
C
= 5.0 mA) (NPN)
(V
CE
= 0.2 V, I
C
= 5.0 mA) (PNP)
Output Voltage (On)
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 kW)
Output Voltage (Off)
(V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 kW)
Input Resistor
Resistor Ratio
6. Pulsed Condition: Pulse Width = 300 ms, Duty Cycle
2%.
h
FE
V
CE(sat)
V
i(off)
80
−
−
−
−
−
−
4.9
1.5
0.038
140
−
0.6
0.6
0.8
0.8
−
−
2.2
0.047
−
0.25
−
−
−
−
0.2
−
2.9
0.056
V
Vdc
I
CBO
I
CEO
I
EBO
V
(BR)CBO
V
(BR)CEO
−
−
−
50
50
−
−
−
−
−
100
500
0.2
−
−
nAdc
nAdc
mAdc
Vdc
Vdc
Symbol
Min
Typ
Max
Unit
V
i(on)
Vdc
V
OL
V
OH
R1
R
1
/R
2
Vdc
Vdc
kW
400
P
D
, POWER DISSIPATION (mW)
350
300
250
200
150
100
50
0
−50
−25
0
25
50
75
100
125
150
(1) (2) (3)
(1) SOT−363; 1.0
1.0 Inch Pad
(2) SOT−563; Minimum Pad
(3) SOT−963; 100 mm
2
, 1 oz. Copper Trace
AMBIENT TEMPERATURE (C)
Figure 1. Derating Curve
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3
MUN5335DW1, NSBC123JPDXV6, NSBC123JPDP6
TYPICAL CHARACTERISTICS
−
NPN TRANSISTOR
MUN5335DW1, NSBC123JPDXV6
V
CE(sat)
, COLLECTOR−EMITTER VOLTAGE (V)
1
I
C
/I
B
= 10
75C
h
FE
, DC CURRENT GAIN
1000
75C
100
V
CE
= 10 V
0.1
−25C
0.01
25C
T
A
=
−25C
25C
10
0.001
0
10
20
40
30
I
C
, COLLECTOR CURRENT (mA)
50
1
1
10
I
C
, COLLECTOR CURRENT (mA)
100
Figure 2. V
CE(sat)
vs. I
C
3.6
I
C
, COLLECTOR CURRENT (mA)
3.2
C
ob
, CAPACITANCE (pF)
2.8
2.4
2
1.6
1.2
0.8
0.4
0
0
10
20
30
40
50
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
f = 10 kHz
I
E
= 0 A
T
A
= 25C
100
10
1
0.1
0.01
Figure 3. DC Current Gain
25C
75C
T
A
=
−25C
0.001
V
O
= 5 V
0
1
2
3
4
5
6
7
V
in
, INPUT VOLTAGE (V)
8
9
10
Figure 4. Output Capacitance
10
Figure 5. Output Current vs. Input Voltage
V
in
, INPUT VOLTAGE (V)
75C
1
25C
T
A
=
−25C
V
O
= 0.2 V
0.1
0
10
20
30
40
I
C
, COLLECTOR CURRENT (mA)
50
Figure 6. Input Voltage vs. Output Current
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4
MUN5335DW1, NSBC123JPDXV6, NSBC123JPDP6
TYPICAL CHARACTERISTICS
−
PNP TRANSISTOR
MUN5335DW1, NSBC123JPDXV6
V
CE(sat)
, COLLECTOR−EMITTER VOLTAGE (V)
1
I
C
/I
B
= 10
h
FE
, DC CURRENT GAIN
1000
25C
V
CE
= 10 V
25C
150C
0.1
100
150C
−55C
10
−55C
0.01
0
30
10
20
40
I
C
, COLLECTOR CURRENT (mA)
50
1
1
10
I
C
, COLLECTOR CURRENT (mA)
100
Figure 7. V
CE(sat)
vs. I
C
7
I
C
, COLLECTOR CURRENT (mA)
6
C
ob
, CAPACITANCE (pF)
5
4
3
2
1
0
0
10
20
30
40
50
f = 10 kHz
I
E
= 0 A
T
A
= 25C
100
150C
10
1
0.1
0.01
Figure 8. DC Current Gain
−55C
25C
0.001
V
O
= 5 V
0
1
2
3
V
in
, INPUT VOLTAGE (V)
4
V
R
, REVERSE BIAS VOLTAGE (V)
Figure 9. Output Capacitance
10
Figure 10. Output Current vs. Input Voltage
V
in
, INPUT VOLTAGE (V)
25C
1
−55C
150C
V
O
= 0.2 V
0.1
0
10
20
30
40
I
C
, COLLECTOR CURRENT (mA)
50
Figure 11. Input Voltage vs. Output Current
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