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HYB314175BJL-50

产品描述EDO DRAM, 256KX16, 50ns, CMOS, PDSO40, 0.400 INCH, PLASTIC, SOJ-40
产品类别存储    存储   
文件大小1MB,共24页
制造商Infineon(英飞凌)
官网地址http://www.infineon.com/
下载文档 详细参数 选型对比 全文预览

HYB314175BJL-50概述

EDO DRAM, 256KX16, 50ns, CMOS, PDSO40, 0.400 INCH, PLASTIC, SOJ-40

HYB314175BJL-50规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称Infineon(英飞凌)
零件包装代码SOJ
包装说明0.400 INCH, PLASTIC, SOJ-40
针数40
Reach Compliance Codeunknown
ECCN代码EAR99
访问模式FAST PAGE WITH EDO
最长访问时间50 ns
其他特性RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH
I/O 类型COMMON
JESD-30 代码R-PDSO-J40
JESD-609代码e0
长度26.16 mm
内存密度4194304 bit
内存集成电路类型EDO DRAM
内存宽度16
功能数量1
端口数量1
端子数量40
字数262144 words
字数代码256000
工作模式ASYNCHRONOUS
最高工作温度70 °C
最低工作温度
组织256KX16
输出特性3-STATE
封装主体材料PLASTIC/EPOXY
封装代码SOJ
封装等效代码SOJ40,.44
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)NOT SPECIFIED
电源3.3 V
认证状态Not Qualified
刷新周期512
座面最大高度3.68 mm
自我刷新YES
最大待机电流0.0002 A
最大压摆率0.125 mA
最大供电电压 (Vsup)3.6 V
最小供电电压 (Vsup)3 V
标称供电电压 (Vsup)3.3 V
表面贴装YES
技术CMOS
温度等级COMMERCIAL
端子面层Tin/Lead (Sn/Pb)
端子形式J BEND
端子节距1.27 mm
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
宽度10.3 mm

文档预览

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3.3V 256 K x 16-Bit EDO-DRAM
3.3V 256 K x 16-Bit EDO-DRAM
(Low power version with Self Refresh)
HYB 314175BJ-50/-55/-60
HYB 314175BJL-50/-55/-60
Preliminary Information
262 144 words by 16-bit organization
0 to 70
°C
operating temperature
Fast access and cycle time
RAS access time:
50 ns (-50 version)
55 ns (-55 version)
60 ns (-60 version)
CAS access time:
13ns (-50 & -55 version)
15 ns (-60 version)
Cycle time:
89 ns (-50 version)
94 ns (-55 version)
104 ns (-60 version)
Hype page mode (EDO) cycle time
20 ns (-50 & -55 version)
25 ns (-60 version)
High data rate
50 MHz (-50 & -55 version)
40 MHz (-60 version)
Single + 3.3 V (±0.3 V) supply with a built-
in VBB generator
Low Power dissipation
max. 450 mW active (-50 version)
max. 432 mW active (-55 version)
max. 378 mW active (-60 version)
Standby power dissipation
7.2 mW standby (TTL)
3.6 mW max. standby (CMOS)
0.72 mW max. standby (CMOS) for
Low Power Version
Output unlatched at cycle end allows two-
dimensional chip selection
Read, write, read-modify write, CAS-
before-RAS refresh, RAS-only refresh,
hidden-refresh and hyper page (EDO)
mode capability
2 CAS / 1 WE control
Self Refresh (L-Version)
All inputs and outputs TTL-compatible
512 refresh cycles / 16 ms
512 refresh cycles / 128 ms
Low Power Version only
Plastic Packages:
P-SOJ-40-1 400mil width
The HYB 314175BJ/BJL is the new generation dynamic RAM organized as 262 144 words by
16-bit. The HYB 314175BJ/BJL utilizes CMOS silicon gate process as well as advanced circuit
techniques to provide wide operation margins, both internally and for the system user. Multiplexed
address inputs permit the HYB 314175BJ/BJL to be packed in a standard plastic 400mil wide
P-SOJ-40-1 package. This package size provides high system bit densities and is compatible with
commonly used automatic testing and insertion equipment. System oriented features include Self
Refresh (L-Version), single + 3.3 V (± 0.3 V) power supply, direct interfacing with high performance
logic device families.
Semiconductor Group
1
7.96

HYB314175BJL-50相似产品对比

HYB314175BJL-50 HYB314175BJ-50 HYB314175BJL-55 HYB314175BJ-60 HYB314175BJ-55 HYB314175BJL-60
描述 EDO DRAM, 256KX16, 50ns, CMOS, PDSO40, 0.400 INCH, PLASTIC, SOJ-40 EDO DRAM, 256KX16, 50ns, CMOS, PDSO40, 0.400 INCH, PLASTIC, SOJ-40 EDO DRAM, 256KX16, 55ns, CMOS, PDSO40, 0.400 INCH, PLASTIC, SOJ-40 EDO DRAM, 256KX16, 60ns, CMOS, PDSO40, 0.400 INCH, PLASTIC, SOJ-40 EDO DRAM, 256KX16, 55ns, CMOS, PDSO40, 0.400 INCH, PLASTIC, SOJ-40 EDO DRAM, 256KX16, 60ns, CMOS, PDSO40, 0.400 INCH, PLASTIC, SOJ-40
是否Rohs认证 不符合 不符合 不符合 不符合 不符合 不符合
厂商名称 Infineon(英飞凌) Infineon(英飞凌) Infineon(英飞凌) Infineon(英飞凌) Infineon(英飞凌) Infineon(英飞凌)
零件包装代码 SOJ SOJ SOJ SOJ SOJ SOJ
包装说明 0.400 INCH, PLASTIC, SOJ-40 0.400 INCH, PLASTIC, SOJ-40 0.400 INCH, PLASTIC, SOJ-40 0.400 INCH, PLASTIC, SOJ-40 0.400 INCH, PLASTIC, SOJ-40 0.400 INCH, PLASTIC, SOJ-40
针数 40 40 40 40 40 40
Reach Compliance Code unknown unknown unknown unknown unknown not_compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
访问模式 FAST PAGE WITH EDO FAST PAGE WITH EDO FAST PAGE WITH EDO FAST PAGE WITH EDO FAST PAGE WITH EDO FAST PAGE WITH EDO
最长访问时间 50 ns 50 ns 55 ns 60 ns 55 ns 60 ns
其他特性 RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH
I/O 类型 COMMON COMMON COMMON COMMON COMMON COMMON
JESD-30 代码 R-PDSO-J40 R-PDSO-J40 R-PDSO-J40 R-PDSO-J40 R-PDSO-J40 R-PDSO-J40
JESD-609代码 e0 e0 e0 e0 e0 e0
长度 26.16 mm 26.16 mm 26.16 mm 26.16 mm 26.16 mm 26.16 mm
内存密度 4194304 bit 4194304 bit 4194304 bit 4194304 bit 4194304 bit 4194304 bit
内存集成电路类型 EDO DRAM EDO DRAM EDO DRAM EDO DRAM EDO DRAM EDO DRAM
内存宽度 16 16 16 16 16 16
功能数量 1 1 1 1 1 1
端口数量 1 1 1 1 1 1
端子数量 40 40 40 40 40 40
字数 262144 words 262144 words 262144 words 262144 words 262144 words 262144 words
字数代码 256000 256000 256000 256000 256000 256000
工作模式 ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
最高工作温度 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C
组织 256KX16 256KX16 256KX16 256KX16 256KX16 256KX16
输出特性 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 SOJ SOJ SOJ SOJ SOJ SOJ
封装等效代码 SOJ40,.44 SOJ40,.44 SOJ40,.44 SOJ40,.44 SOJ40,.44 SOJ40,.44
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
电源 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
刷新周期 512 512 512 512 512 512
座面最大高度 3.68 mm 3.68 mm 3.68 mm 3.68 mm 3.68 mm 3.68 mm
自我刷新 YES NO YES NO NO YES
最大待机电流 0.0002 A 0.001 A 0.0002 A 0.001 A 0.001 A 0.0002 A
最大压摆率 0.125 mA 0.125 mA 0.12 mA 0.105 mA 0.12 mA 0.105 mA
最大供电电压 (Vsup) 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V
最小供电电压 (Vsup) 3 V 3 V 3 V 3 V 3 V 3 V
标称供电电压 (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
表面贴装 YES YES YES YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
端子面层 Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
端子形式 J BEND J BEND J BEND J BEND J BEND J BEND
端子节距 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
宽度 10.3 mm 10.3 mm 10.3 mm 10.3 mm 10.3 mm 10.3 mm

 
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