LESHAN RADIO COMPANY, LTD.
Dual Bias Resistor Transistors
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a base–emitter resistor. These
digital transistors are designed to replace a single device and its external resistor bias network.
The BRT eliminates these individual components by integrating them into a single device. In
the LMUN5111DW1T1G series, two BRT devices are housed in the SOT–363 package which
is ideal for low–power surface mount applications where board space is at a premium.
. Simplifies Circuit Design
. Reduces Board Space
. Reduces Component Count
. Available in 8 mm, 7 inch/3000 Unit Tape and Reel
LMUN5111DW1T1G
Series
S-LMUN5111DW1T1G
Series
6
5
4
1
2
3
. We declare that the material of product compliance with RoHS requirements.
.S - Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
SC-88/SOT-363
Ordering Information
Device
LMUN5111DW1T1G Series
S-LMUN5111DW1T1G Series
LMUN5111DW1T3G Series
S-LMUN5111DW1T3G Series
Package
SC-88
SC-88
SC-88
SC-88
Shipping
3000/Tape&Reel
10000/Tape&Reel
6
5
4
Q
2
R
2
R
1
1
2
R
1
R
2
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted, common for Q
1
and Q
2
)
Rating
Symbol Value
Unit
Collector-Base Voltage
V
CBO
–50
Vdc
Collector-Emitter Voltage
V
CEO
–50
Vdc
Collector Current
I
C
–100 mAdc
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Symbol
Max
Unit
Total Device Dissipation
P
D
187 (Note 1.)
mW
256 (Note 2.)
T
A
= 25°C
1.5 (Note 1.)
mW/°C
Derate above 25°C
2.0 (Note 2.)
Thermal Resistance –
Junction-to-Ambient
Characteristic
(Both Junctions Heated)
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance –
Junction-to-Ambient
Thermal Resistance –
Junction-to-Lead
Junction and Storage
Temperature
1. FR–4 @ Minimum Pad
R
θJA
670 (Note 1.)
490 (Note 2.)
°C/W
Q
1
3
MARKING DIAGRAM
6
5
4
XX
1
2
3
xx = Device Marking
=
(See Page 2)
DEVICE MARKING
INFORMATION
See specific marking information in
the device marking table on page 2 of
this data sheet.
Symbol
P
D
Max
250 (Note 1.)
385 (Note 2.)
2.0 (Note 1.)
3.0 (Note 2.)
493 (Note 1.)
325 (Note 2.)
188 (Note 1.)
208 (Note 2.)
–55 to +150
Unit
mW
mW/°C
°C/W
°C/W
°C
R
θJA
R
θJL
T
J
, T
stg
2. FR–4 @ 1.0 x 1.0 inch Pad
Rev.A 1/19
LESHAN RADIO COMPANY, LTD.
LMUN5111DW1T1G
S-LMUN5111DW1T1G
Series
Series
DEVICE MARKING AND RESISTOR VALUES
Device
LMUN5111DW1T1G
LMUN5112DW1T1G
LMUN5113DW1T1G
LMUN5114DW1T1G
LMUN5115DW1T1G
LMUN5116DW1T1G
LMUN5130DW1T1G
LMUN5131DW1T1G
LMUN5132DW1T1G
LMUN5133DW1T1G
LMUN5134DW1T1G
LMUN5135DW1T1G
LMUN5136DW1T1G
LMUN5137DW1T1G
Package
SOT-363
SOT-363
SOT-363
SOT-363
SOT-363
SOT-363
SOT-363
SOT-363
SOT-363
SOT-363
SOT-363
SOT-363
SOT-363
SOT-363
Marking
0A
0B
0C
0D
0E
0F
0G
0H
0J
0K
0L
0M
0N
0P
R
1
(K)
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
100
47
R
2
(K)
10
22
47
47
Shipping
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
–
–
1.0
2.2
4.7
47
47
47
100
22
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted, common for Q
1
and Q
2
)
Characteristic
OFF CHARACTERISTICS
Collector‐Base Cutoff Current (V
CB
= -50 V, I
E
= 0)
Collector‐Emitter Cutoff Current (V
CE
= -50 V, I
B
= 0)
Emitter‐Base Cutoff Current
(V
EB
= -6.0 V, I
C
= 0)
LMUN5111DW1T1G
LMUN5112DW1T1G
LMUN5113DW1T1G
LMUN5114DW1T1G
LMUN5115DW1T1G
LMUN5116DW1T1G
LMUN5130DW1T1G
LMUN5131DW1T1G
LMUN5132DW1T1G
LMUN5133DW1T1G
LMUN5134DW1T1G
LMUN5135DW1T1G
LMUN5136DW1T1G
LMUN5137DW1T1G
I
CBO
I
CEO
I
EBO
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-50
-50
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-100
-500
-0.5
-0.2
-0.1
-0.2
-0.9
-1.9
-4.3
-2.3
-1.5
-0.18
-0.13
-0.2
-0.05
-0.13
-
-
nAdc
nAdc
mAdc
Symbol
Min
Typ
Max
Unit
Collector‐Base Breakdown Voltage (I
C
= -10
mA,
I
E
= 0)
Collector‐Emitter Breakdown Voltage (Note 3) (I
C
= -2.0 mA, I
B
= 0)
V
(BR)CBO
V
(BR)CEO
Vdc
Vdc
3. New resistor combinations. Updated curves to follow in subsequent data sheets.
4. Pulse Test: Pulse Width < 300
µs,
Duty Cycle < 2.0%
Rev.A 2/19
LESHAN RADIO COMPANY, LTD.
LMUN5111DW1T1G
S-LMUN5111DW1T1G
Series
Series
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted, common for Q
1
and Q
2
,)(Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
(Note 4.)
Collector‐Emitter Saturation Voltage
(I
C
= -10 mA, I
B
= -0.3 mA)
V
CE(sat)
LMUN5111DW1T1G
LMUN5112DW1T1G
LMUN5113DW1T1G
LMUN5114DW1T1G
LMUN5135DW1T1G
LMUN5136DW1T1G
LMUN5137DW1T1G
LMUN5130DW1T1G
LMUN5131DW1T1G
LMUN5115DW1T1G
LMUN5116DW1T1G
LMUN5132DW1T1G
LMUN5133DW1T1G
LMUN5134DW1T1G
LMUN5111DW1T1G
LMUN5112DW1T1G
LMUN5113DW1T1G
LMUN5114DW1T1G
LMUN5115DW1T1G
LMUN5116DW1T1G
LMUN5130DW1T1G
LMUN5131DW1T1G
LMUN5132DW1T1G
LMUN5133DW1T1G
LMUN5134DW1T1G
LMUN5135DW1T1G
LMUN5136DW1T1G
LMUN5137DW1T1G
LMUN5111DW1T1G
LMUN5112DW1T1G
LMUN5114DW1T1G
LMUN5115DW1T1G
LMUN5116DW1T1G
LMUN5130DW1T1G
LMUN5131DW1T1G
LMUN5132DW1T1G
LMUN5133DW1T1G
LMUN5134DW1T1G
LMUN5135DW1T1G
LMUN5113DW1T1G
LMUN5136DW1T1G
LMUN5137DW1T1G
V
OH
-4.9
-4.9
-4.9
-4.9
-4.9
-4.9
-4.9
-4.9
-4.9
-4.9
-4.9
-4.9
-4.9
-4.9
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
h
FE
-
-
-
-
-
-
-
-
-
-
-
-
-
-
35
60
80
80
160
160
3.0
8.0
15
80
80
80
80
80
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
60
100
140
140
250
250
5.0
15
27
140
130
140
130
140
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-0.25
-0.25
-0.25
-0.25
-0.25
-0.25
-0.25
-0.25
-0.25
-0.25
-0.25
-0.25
-0.25
-0.25
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Vdc
-0.2
-0.2
-0.2
-0.2
-0.2
-0.2
-0.2
-0.2
-0.2
-0.2
-0.2
-0.2
-0.2
-0.2
Vdc
Vdc
(I
C
= -10 mA, I
B
= -5 mA)
(I
C
= -10 mA, I
B
= -1 mA)
DC Current Gain
(V
CE
= -10 V, I
C
= -5.0 mA)
Output Voltage (on)
(V
CC
= -5.0 V, V
B
= -2.5 V, R
L
= 1.0 kW)
V
OL
(V
CC
= -5.0 V, V
B
= -3.5 V, R
L
= 1.0 kW)
(V
CC
= -5.0 V, V
B
= -5.5 V, R
L
= 1.0 kW)
(V
CC
= -5.0 V, V
B
= -4.0 V, R
L
= 1.0 kW)
Output Voltage (off)
(V
CC
= -5.0 V, V
B
= -0.5 V, R
L
= 1.0 kW)
LMUN5111DW1T1G
LMUN5112DW1T1G
LMUN5113DW1T1G
LMUN5114DW1T1G
LMUN5133DW1T1G
LMUN5134DW1T1G
LMUN5135DW1T1G
LMUN5136DW1T1G
LMUN5137DW1T1G
(V
CC
= -5.0 V, V
B
= -0.05 V, R
L
= 1.0 kW)
LMUN5130DW1T1G
LMUN5115DW1T1G
(V
CC
= -5.0 V, V
B
= -0.25 V, R
L
= 1.0 kW)
LMUN5116DW1T1G
LMUN5131DW1T1G
LMUN5132DW1T1G
4. Pulse Test: Pulse Width < 300
ms,
Duty Cycle < 2.0%
Rev.A 3/19
LESHAN RADIO COMPANY, LTD.
LMUN5111DW1T1G
S-LMUN5111DW1T1G
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted, common for Q
1
and Q
2
,) (Continued)
Characteristic
Symbol
Min
Typ
ON CHARACTERISTICS(Note
5.)
Input Resistor
LMUN5111DW1T1G
LMUN5112DW1T1G
LMUN5113DW1T1G
LMUN5114DW1T1G
LMUN5115DW1T1G
LMUN5116DW1T1G
LMUN5130DW1T1G
LMUN5131DW1T1G
LMUN5132DW1T1G
LMUN5133DW1T1G
LMUN5134DW1T1G
LMUN5135DW1T1G
LMUN5136DW1T1G
LMUN5137DW1T1G
LMUN5111DW1T1G
LMUN5112DW1T1G
LMUN5113DW1T1G
LMUN5114DW1T1G
LMUN5115DW1T1G
LMUN5116DW1T1G
LMUN5130DW1T1G
LMUN5131DW1T1G
LMUN5132DW1T1G
LMUN5133DW1T1G
LMUN5134DW1T1G
LMUN5135DW1T1G
LMUN5136DW1T1G
LMUN5137DW1T1G
R
1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
70
32.9
0.8
0.8
0.8
0.17
-
-
0.8
0.8
0.8
0.055
0.38
0.038
0.8
1.7
Series
Series
Max
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
100
47
1.0
1.0
1.0
0.21
-
-
1.0
1.0
1.0
0.12
0.47
0.047
1.0
2.15
Unit
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
130
61.1
1.2
1.2
1.2
0.25
-
-
1.2
1.2
1.2
0.185
0.56
0.056
1.2
2.6
k
W
Resistor Ratio
R
1
/R
2
5. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
300
P
D
, POWER DISSIPATION (mW)
250
200
150
100
50
0
–50
0
50
100
150
T
A
, AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
Rev.A 4/19
LESHAN RADIO COMPANY, LTD.
LMUN5111DW1T1G
S-LMUN5111DW1T1G
TYPICAL ELECTRICAL CHARACTERISTICS – LMUN5111DW1T1G
VCE(sat) , COLLECTOR VOLTAGE (VOLTS)
1
hFE , DC CURRENT GAIN (NORMALIZED)
I
C
/I
B
= 10
1000
V
CE
= 10 V
Series
Series
T
A
= -25
°C
0.1
25°C
75°C
T
A
= 75°C
25°C
100
-25
°C
0.01
0
20
I
C
, COLLECTOR CURRENT (mA)
40
50
10
1
10
I
C
, COLLECTOR CURRENT (mA)
100
Figure 2. V
CE(sat)
versus I
C
Figure 3. DC Current Gain
4
f = 1 MHz
l
E
= 0 V
T
A
= 25°C
100
75°C
IC, COLLECTOR CURRENT (mA)
10
25°C
T
A
= -25
°C
Cob , CAPACITANCE (pF)
3
1
2
0.1
1
0.01
0
1
2
V
O
= 5 V
6
7
3
4
5
V
in
, INPUT VOLTAGE (VOLTS)
8
9
10
0
0
10
20
30
40
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
50
0.001
Figure 4. Output Capacitance
100
V
O
= 0.2 V
V in , INPUT VOLTAGE (VOLTS)
Figure 5. Output Current versus Input Voltage
10
T
A
= -25
°C
25°C
75°C
1
0.1
0
10
20
30
I
C
, COLLECTOR CURRENT (mA)
40
50
Figure 6. Input Voltage versus Output Current
Rev.A 5/19
Microchip MCU
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