SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
KRC410E~KRC414E
EPITAXIAL PLANAR NPN TRANSISTOR
E
FEATURES
・With
Built-in Bias Resistors.
・Simplify
Circuit Design.
・Reduce
a Quantity of Parts and Manufacturing Process.
・High
Packing Density.
・Suffix
U
: Qualified to AEC-Q101.
ex) KRC414E-RTK/HU
2
B
D
3
1
DIM
A
B
C
D
E
F
G
J
C
H
J
EQUIVALENT CIRCUIT
F
F
MILLIMETERS
_
1.60 + 0.20
_ 0.10
0.85+
_
0.70 + 0.10
_
0.27 + 0.10
_
1.60 + 0.10
_ 0.10
0.39 +
_
1.00 + 0.10
0.50
_
0.13 + 0.05
A
G
H
C
R1
1. COMMON (EMITTER)
2. IN (BASE)
3. OUT (COLLECTOR)
B
E
ESM
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
RATING
50
50
5
100
UNIT
V
V
V
mA
CHARACTERISTIC
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
P
C
T
j
T
stg
RATING
100
150
-55½150
UNIT
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
KRC410E
KRC411E
Input Resistor
KRC412E
KRC413E
KRC414E
R
1
SYMBOL
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
*
TEST CONDITION
V
CB
=50V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=5V, I
C
=1mA
I
C
=10mA, I
B
=0.5mA
V
CE
=10V, I
C
=5mA
MIN.
-
-
120
-
-
3.29
7
70
15.4
32.9
TYP.
-
-
-
0.1
250
4.7
10
100
22
47
MAX.
100
100
-
0.3
-
6.11
13
130
28.6
61.1
Type Name
UNIT
nA
nA
V
MHz
kΩ
Marking
MARK SPEC
TYPE
MARK
KRC410E
NK
KRC411E
NM
KRC412E
NN
KRC413E
NO
KRC414E
NP
2019. 01. 08
Revision No : 4
1/4
KRC410E~KRC414E
h
FE
- I
C
2k
DC CURRENT GAIN h
FE
1k
500
300
100
50
30
V
CE
=5V
Ta=100 C
Ta=25 C
Ta=-25 C
V
CE(sat)
- I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CE(sat)
(V)
2
1
0.5
0.3
KRC410E
I
C
/I
B
=20
KRC410E
0.1
0.05
0.03
0.01
0.1
Ta=100 C
Ta=25 C
Ta=-25 C
10
0.1
0.3
1
3
10
30
100
0.3
1
3
10
30
100
COLLECTOR CURRENT I
C
(mA)
COLLECTOR CURRENT I
C
(mA)
h
FE
- I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CE(sat)
(V)
2k
DC CURRENT GAIN h
FE
1k
500
300
100
50
30
V
CE
=5V
Ta=100 C
Ta=25 C
Ta=-25 C
KRC411E
V
CE(sat)
- I
C
2
1
0.5
0.3
0.1
0.05
0.03
0.01
0.1
Ta=100 C
Ta=25 C
Ta=-25 C
KRC411E
I
C
/I
B
=20
10
0.1
0.3
1
3
10
30
100
0.3
1
3
10
30
100
COLLECTOR CURRENT I
C
(mA)
COLLECTOR CURRENT I
C
(mA)
h
FE
- I
C
2k
1k
DC CURRENT GAIN h
FE
500
300
100
50
30
V
CE
=5V
V
CE(sat)
- I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CE(sat)
(V)
2
1
0.5
0.3
0.1
0.05
0.03
0.01
Ta=100 C
Ta=25 C
Ta=-25 C
KRC412E
I
C
/I
B
=20
KRC412E
Ta=100 C
Ta=25 C
Ta=-25 C
10
0.1
0.3
1
3
10
30
100
0.1
0.3
1
3
10
30
100
COLLECTOR CURRENT I
C
(mA)
COLLECTOR CURRENT I
C
(mA)
2019. 01. 08
Revision No : 4
3/4
电子竞赛
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
