SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
KRC410V~KRC414V
EPITAXIAL PLANAR NPN TRANSISTOR
E
FEATURES
With Built-in Bias Resistors.
Simplify Circuit Design.
High Packing Density.
A
G
1
B
H
3
EQUIVALENT CIRCUIT
P
P
C
J
B
R1
C
E
K
1. COMMON (EMITTER)
2. IN (BASE)
3. OUT (COLLECTOR)
VSM
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
RATING
50
50
5
100
UNIT
V
V
V
mA
CHARACTERISTIC
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
P
C
T
j
T
stg
RATING
100
150
-55 150
UNIT
mW
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
KRC410V
KRC411V
Input Resistor
KRC412V
KRC413V
KRC414V
Note : * Characteristic of Transistor Only.
R
1
SYMBOL
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
*
TEST CONDITION
V
CB
=50V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=5V, I
C
=1mA
I
C
=10mA, I
B
=0.5mA
V
CE
=10V, I
C
=5mA
MIN.
-
-
120
-
-
-
-
-
-
-
TYP.
-
-
-
0.1
250
4.7
10
100
22
47
MAX.
100
100
-
0.3
-
-
-
-
-
-
k
V
MHz
UNIT
nA
nA
Marking
MARK SPEC
TYPE
MARK
KRC410V
NK
KRC411V
NM
KRC412V
NN
KRC413V
NO
KRC414V
NP
D
Reduce a Quantity of Parts and Manufacturing Process.
2
DIM MILLIMETERS
_
A
1.2 +0.05
_
B
0.8 +0.05
_
C
0.5 + 0.05
_
0.3 + 0.05
D
_
1.2 + 0.05
E
_
G
0.8 + 0.05
H
0.40
_
J
0.12 + 0.05
_
K
0.2 + 0.05
P
5
Type Name
2002. 7. 10
Revision No : 1
1/4
KRC410V~KRC414V
h
FE
- I
C
COLLECTOR-EMITTER SATURATIN
VOLTAGE V
CE(sat)
(V)
2k
DC CURRENT GAIN h
FE
1k
500
300
100
50
30
V
CE
=5V
Ta=100 C
Ta=25 C
Ta=-25 C
KRC410V
V
CE(sat)
- I
C
2
1
0.5
0.3
KRC410V
I
C
/I
B
=20
0.1
0.05
0.03
0.01
0.1
Ta=100 C
Ta=25 C
Ta=-25 C
10
0.1
0.3
1
3
10
30
100
0.3
1
3
10
30
100
COLLECTOR CURRENT I
C
(mA)
COLLECTOR CURRENT I
C
(mA)
h
FE
- I
C
COLLECTOR-EMITTER SATURATIN
VOLTAGE V
CE(sat)
(V)
2k
DC CURRENT GAIN h
FE
1k
500
300
100
50
30
V
CE
=5V
Ta=100 C
Ta=25 C
Ta=-25 C
KRC411V
V
CE(sat)
- I
C
2
1
0.5
0.3
0.1
0.05
0.03
0.01
0.1
Ta=100 C
Ta=25 C
Ta=-25 C
KRC411V
I
C
/I
B
=20
10
0.1
0.3
1
3
10
30
100
0.3
1
3
10
30
100
COLLECTOR CURRENT I
C
(mA)
COLLECTOR CURRENT I
C
(mA)
h
FE
- I
C
COLLECTOR-EMITTER SATURATIN
VOLTAGE V
CE(sat)
(V)
2k
1k
DC CURRENT GAIN h
FE
500
300
100
50
30
V
CE
=5V
KRC412V
V
CE(sat)
- I
C
2
1
0.5
0.3
0.1
0.05
0.03
0.01
Ta=100 C
Ta=25 C
Ta=-25 C
KRC412V
I
C
/I
B
=20
Ta=100 C
Ta=25 C
Ta=-25 C
10
0.1
0.3
1
3
10
30
100
0.1
0.3
1
3
10
30
100
COLLECTOR CURRENT I
C
(mA)
COLLECTOR CURRENT I
C
(mA)
2002. 7. 10
Revision No : 1
3/4
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