High Resolution Optical
Reflective Sensor
Technical Data
HBCS-1100
Features
• Focused Emitter and
Detector in a Single Package
• High Resolution–0.190 mm
Spot Size
• 700 nm Visible Emitter
• Lens Filtered to Reject
Ambient Light
• TO-5 Miniature Sealed
Package
• Photodiode and Transistor
Output
• Solid State Reliability
matched I.C. photodetector. A
bifurcated aspheric lens is used
to image the active areas of the
emitter and the detector to a
single spot 4.27 mm (0.168 in.)
in front of the package. The
reflected signal can be sensed
directly from the photodiode or
through an internal transistor
that can be configured as a high
gain amplifier.
Applications
Applications include pattern
recognition and verification,
object sizing, optical limit
switching, tachometry, textile
thread counting and defect
detection, dimensional monitor-
ing, line locating, mark, and bar
code scanning, and paper edge
detection.
Mechanical
Considerations
The HBCS-1100 is packaged in a
high profile 8 pin TO-5 metal can
with a glass window. The emitter
and photodetector chips are
mounted on the header at the
base of the package. Positioned
above these active elements is a
bifurcated aspheric acrylic lens
that focuses them to the same
point.
S.P.
12.0
(0.473)
R.P.
Description
The HBCS-1100 is a fully inte-
grated module designed for
optical reflective sensing. The
module contains a 0.178 mm
(0.007 in.) diameter 700 nm
visible LED emitter and a
Package Dimensions
9.40 (0.370)
8.51 (0.335)
MAXIMUM
SIGNAL POINT
0.86 (0.034)
0.73 (0.029)
C
L
REFERENCE
PLANE
4.27 ± 0.25
(0.168 ± 0.010)
4.11
(0.162)
1.14 (0.045)
0.73 (0.029)
15.24 (0.600)
12.70 (0.500)
5.08
(0.200)
8.33 (0.328)
7.79 (0.307)
5.08
(0.200)
11.50 (0.453)
11.22 (0.442)
NOTES:
1. ALL DIMENSIONS IN MILLIMETERS AND (INCHES).
2. ALL UNTOLERANCED DIMENSIONS ARE FOR REFERENCE ONLY.
3. THE REFERENCE PLANE IS THE TOP SURFACE OF THE PACKAGE.
4. NICKEL CAN AND GOLD PLATED LEADS.
5. S.P. SEATING PLANE.
6. THE LEAD DIAMETER IS 0.45 mm (0.018 IN.) TYP.
2
The sensor can be rigidly secured
by commercially available two
piece TO-5 style heat sinks, such
as Thermalloy 2205, or Aavid
Engineering 3215. These fixtures
provide a stable reference plat-
form and their tapped mounting
holes allow for ease of affixing
this assembly to the circuit board.
Electrical Operation
The detector section of the
sensor can be connected as a
single photodiode or as a
photodiode transistor amplifier.
When photodiode operation is
desired, it is recommended that
the substrate diodes be defeated
by connecting the collector of the
transistor to the positive potential
of the power supply and shorting
the base-emitter junction of the
transistor. Figure 15 shows
photocurrent being supplied from
the anode of the photodiode to an
inverting input of the operational
amplifier. The circuit is recom-
mended to improve the reflected
photocurrent to stray photocur-
rent ratio by keeping the
substrate diodes from acting as
photodiodes.
The cathode of the 700 nm
emitter is physically and
electrically connected to the case-
substrate of the device. Applica-
tions that require modulation or
switching of the LED should be
designed to have the cathode
connected to the electrical
ground of the system. This
insures minimum capacitive
coupling of the switching
transients through the substrate
diodes to the detector amplifier
section.
The HBCS-1100 detector also
includes an NPN transistor which
can be used to increase the
output current of the sensor. A
current feedback amplifier as
shown in Figure 6 provides
moderate current gain and bias
point stability.
Schematic Diagram
V
D
REFLECTOR
REFERENCE
PLANE
3
V
C
1
Connection Diagram
3
4
2
5
ANODE
V
F
6
1
TOP VIEW
6
7
D
S
D
S
8
CATHODE 4
SUBSTRATE, CASE
D
S
– SUBSTRATE DIODES
PIN
1
2
3
4
5
6
7
8
FUNCTION
TRANSISTOR COLLECTOR
TRANSISTOR BASE, PHOTODIODE ANODE
PHOTODIODE CATHODE
LED CATHODE, SUBSTRATE, CASE
NC
LED ANODE
NC
TRANSISTOR EMITTER
2
V
B
8
V
E
CAUTION: The small junction sizes inherent to the design of this bipolar component increase the component's
susceptibility to damage from electrostatic discharge (ESD). It is advised that normal static precautions be
taken in handling and assembly of this component to prevent damage and/or degradation which may be
introduced by ESD.
3
Absolute Maximum Ratings at T
A
= 25
°
C
Parameter
Storage Temperature
Operating Temperature
Lead Soldering Temperature
1.6 mm from Seating Plane
Average LED Forward Current
Peak LED Forward Current
Reverse LED Input Voltage
Package Power Dissipation
Collector Output Current
Supply and Output Voltage
Transistor Base Current
Transistor Emitter Base Voltage
Symbol
T
S
T
A
Min.
-40
-20
Max.
+75
+70
260 for 10 sec.
50
75
5
120
8
20
5
0.5
Units
°C
°C
°C
mA
mA
V
mW
mA
V
mA
V
Fig.
Notes
11
2
1
3
10
I
F
I
FPK
V
R
P
P
I
O
V
D
, V
C
, V
E
I
B
V
EB
1
-0.5
System Electrical/Optical Characteristics at T
A
= 25
°
C
Parameter
Total Photocurrent
(I
PR
+ I
PS
)
Reflected Photocurrent
(I
PR
) to Internal Stray
Photocurrent (I
PS
)
Transistor DC Static
Current Transfer Ratio
Slew Rate
Symbol
I
P
Min. Typ. Max. Units
Conditions
575
nA
T
A
= 20°C I
F
= 35 mA,
150 250 375
T
A
= 25°C V
D
= V
C
= 5 V
80
T
A
= 70°C
4
8.5
I
F
= 35 mA,
V
C
= V
D
= 5 V
50
100 200
0.08
T
A
= 20°C V
CE
= 5 V,
T
A
= 25°C I
C
= 10
µA
R
L
= 100 K, I
PK
= 50 mA,
R
F
= 10 M, t
ON
= 100
µs,
Rate = 1 kHz
I
F
= 35 mA,
= 4.27 mm (0.168 in.)
Measured from Reference
Plane
I
F
= 35 mA,
=4.27 mm
50% of I
P
at = 4.27 mm
Fig. Note
2, 3
4
15
3
I
PR
I
PS
h
FE
4, 5
6
V/µs
Image Diameter
Maximum Signal Point
50% Modulation
Transfer Function
Depth of Focus
Effective Numerical
Aperture
Image Location
d
0.17
4.01 4.27
4.52
mm
mm
I
npr/mm
mm
8, 10 8, 9
9
10,
11
9
5, 7
5
MTF
∆
FWHM
N.A.
D
2.5
1.2
0.3
0.51
mm
Diameter Reference to
Centerline
= 4.27 mm
6
Thermal Resistance
Θ
JC
85
°C/W
4
Detector Electrical/Optical Characteristics at T
A
= 25
°
C
Parameter
Dark Current
Capacitance
Flux Responsivity
Detector Area
Symbol
I
PD
C
D
Rφ
A
D
Min. Typ.
5
45
0.22
0.160
Max.
200
10
Units
pA
nA
pF
A/W
mm
2
Conditions
Fig. Note
T
A
= 25°C
I
F
= 0, V
D
= 5 V;
Reflection = 0%
T
A
= 70°C
V
D
= 0 V, I
P
= 0, f = 1 MHz
λ
= 700 nm, V
D
= 5 V
Square, with
Length = 0.4 mm/Side
12
Emitter Electrical/Optical Characteristics at T
A
= 25
°
C
Parameter
Forward Voltage
Reverse Breakdown Voltage
Radiant Flux
Peak Wavelength
Thermal Resistance
Temperature Coefficient of V
F
Symbol
V
F
BV
R
φ
E
λ
p
Θ
JC
∆V
F
/∆T
Min.
5
5
680
Typ.
1.6
9.0
700
150
-1.2
720
Max.
1.8
Units
V
V
µW
nm
°C/W
mV/°C
Conditions
I
F
= 35 mA
I
R
= 100
µA
I
F
= 35 mA,
λ
= 700 nm
I
F
= 35 mA
I
F
= 35 mA
Fig. Note
13
14
14
Transistor Electrical Characteristics at T
A
= 25
°
C
Parameter
Collector-Emitter Leakage
Base-Emitter Voltage
Collector-Emitter Saturation
Voltage
Collector-Base Capacitance
Base-Emitter Capacitance
Thermal Resistance
Symbol Min. Typ. Max. Units
Conditions
I
CEO
1
nA
V
CE
= 5 V
V
BE
0.6
V
I
C
= 10
µA,
I
B
= 70 nA
V
CE
(SAT)
0.4
V
I
B
= 1
µA,
I
E
= 10
µA
C
CB
C
BE
Θ
JC
0.3
0.4
200
pF
f = 1 MHz, V
CB
= 5 V
pF
f = 1 MHz, V
BE
= 0 V
°C/W
Fig. Note
Notes:
1. 300
µs
pulse width, 1 kHz pulse rate.
2. Derate Maximum Average Current linearly from 65°C by 6 mA/°C.
3. Without heat sinking from T
A
= 65°C, derate Maximum Average Power linearly by 12 mW/°C.
4. Measured from a reflector coated with a 99% reflective white paint (Kodak 6080) positioned 4.27 mm (0.168 in.) from the
reference plane.
5. Peak-to-Peak response to black and white bar patterns.
6. Center of maximum signal point image lies within a circle of diameter D relative to the center line of the package. A second
emitter image (through the detector lens) is also visible. This image does not affect normal operation.
7. This measurement is made with the lens cusp parallel to the black-white transition.
8. Image size is defined as the distance for the 10%-90% response as the sensor moves over an abrupt black-white edge.
9. (+) indicates an increase in the distance from the reflector to the reference plane.
10. All voltages referenced to Pin 4.
11. CAUTION: The thermal constraints of the acrylic lens will not permit the use of conventional wave soldering procedures. The
typical preheat and post cleaning temperatures and dwell times can subject the lens to thermal stresses beyond the absolute
maximum ratings and can cause it to defocus.
5
I
FPK (MAX.)
RATIO OF MAXIMUM OPERATING PEAK
I
F (MAX.)
CURRENT TO TEMPERATURE DERATED
MAXIMUM DC CURRENT
PHOTOCURRENT, I
PR
OR I
PS
(NORMALIZED AT I
F
= 35 mA, T
A
= 25 °C)
1.6
-20 °C
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
10
20
30
40
50
60
70
80
0 °C
25 °C
50 °C
70 °C
2.0
1.8
1.6
1.4
1 00
300
1K
3K
Hz
30 K
Hz
10 K
Hz
Hz
Hz
Hz
1.2
1.0
1
10
100
t
P
– PULSE DURATION (µs)
1000
10,000
I
F
– DC FORWARD CURRENT (mA)
Figure 1. Maximum Tolerable Peak Current vs. Pulse
Duration.
Figure 2. Relative Total Photocurrent
vs. LED DC Forward Current.
+5 V
REFLECTOR
REFERENCE
PLANE
ANODE
V
F
+
HP 6177
6
3
1
I
F
= 35 mA
D
S
CATHODE 4
SUBSTRATE, CASE
I
P
= I
PR
+ I
PS
D
S
2
I
P
+
NANOAMPERE METER
(KEITHLEY MODEL 480)
NOTES:
1. I
P
MEASUREMENT CONDITIONS ARE: = 4.34 mm,
KODAK 6080 PAINT REFLECTOR.
2. I
PS
MEASUREMENT CONDITIONS ARE: =
A CAVITY WHOSE DEPTH IS MUCH GREATER THAN
THE HBCS-1100 DEPTH OF FIELD.
8
Figure 3. I
P
Test Circuit.
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