MJE13007G
SWITCHMODE
NPN Bipolar Power Transistor
For Switching Power Supply Applications
The MJE13007G is designed for high−voltage, high−speed power
switching inductive circuits where fall time is critical. It is particularly
suited for 115 and 220 V SWITCHMODE applications such as
Switching Regulators, Inverters, Motor Controls, Solenoid/Relay
drivers and Deflection circuits.
Features
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POWER TRANSISTOR
8.0 AMPERES
400 VOLTS
−
80 WATTS
COLLECTOR
2,4
•
•
•
•
SOA and Switching Applications Information
Standard TO−220
These Devices are Pb−Free and are RoHS Compliant*
Complementary to the MJE5850 through MJE5852 Series
MAXIMUM RATINGS
Rating
Collector−Emitter Sustaining Voltage
Collector−Base Breakdown Voltage
Emitter−Base Voltage
Collector Current
Collector Current
Base Current
Base Current
Emitter Current
Emitter Current
−
Continuous
−
Peak (Note 1)
−
Continuous
−
Peak (Note 1)
−
Continuous
−
Peak (Note 1)
Symbol
V
CEO
V
CES
V
EBO
I
C
I
CM
I
B
I
BM
I
E
I
EM
P
D
T
J
, T
stg
Value
400
700
9.0
8.0
16
4.0
8.0
12
24
80
0.64
−65
to 150
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
Adc
Adc
Adc
W
W/_C
_C
1
2
1
BASE
3
EMITTER
4
TO−220AB
CASE 221A−09
STYLE 1
3
Total Device Dissipation @ T
C
= 25_C
Derate above 25°C
Operating and Storage Temperature
MARKING DIAGRAM
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle
≤
10%.
MJE13007G
AY WW
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Maximum Lead Temperature for Soldering
Purposes 1/8″ from Case for 5 Seconds
Symbol
R
qJC
R
qJA
T
L
Max
1.56
62.5
260
Unit
_C/W
_C/W
_C
A
Y
WW
G
= Assembly Location
= Year
= Work Week
= Pb−Free Package
*Measurement made with thermocouple contacting the bottom insulated mounting
surface of the package (in a location beneath the die), the device mounted on a
heatsink with thermal grease applied at a mounting torque of 6 to 8lbs.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2013
ORDERING INFORMATION
Device
MJE13007G
Package
TO−220
(Pb−Free)
Shipping
50 Units / Rail
August, 2013
−
Rev. 8
1
Publication Order Number:
MJE13007/D
MJE13007G
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
(Note 2)
Collector−Emitter Sustaining Voltage
(I
C
= 10 mA, I
B
= 0)
Collector Cutoff Current
(V
CES
= 700 Vdc)
(V
CES
= 700 Vdc, T
C
= 125°C)
Emitter Cutoff Current
(V
EB
= 9.0 Vdc, I
C
= 0)
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
Clamped Inductive SOA with Base Reverse Biased
ON CHARACTERISTICS
(Note 2)
DC Current Gain
(I
C
= 2.0 Adc, V
CE
= 5.0 Vdc)
(I
C
= 5.0 Adc, V
CE
= 5.0 Vdc)
Collector−Emitter Saturation Voltage
(I
C
= 2.0 Adc, I
B
= 0.4 Adc)
(I
C
= 5.0 Adc, I
B
= 1.0 Adc)
(I
C
= 8.0 Adc, I
B
= 2.0 Adc)
(I
C
= 5.0 Adc, I
B
= 1.0 Adc, T
C
= 100°C)
Base−Emitter Saturation Voltage
(I
C
= 2.0 Adc, I
B
= 0.4 Adc)
(I
C
= 5.0 Adc, I
B
= 1.0 Adc)
(I
C
= 5.0 Adc, I
B
= 1.0 Adc, T
C
= 100°C)
DYNAMIC CHARACTERISTICS
Current−Gain
−
Bandwidth Product
(I
C
= 500 mAdc, V
CE
= 10 Vdc, f = 1.0 MHz)
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 0.1 MHz)
SWITCHING CHARACTERISTICS
Resistive Load
(Table 1)
Delay Time
Rise Time
Storage Time
Fall Time
Inductive Load, Clamped
(Table 1)
Voltage Storage Time
Crossover Time
Fall Time
2. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2.0%.
V
CC
= 15 Vdc, I
C
= 5.0 A
V
clamp
= 300 Vdc
I
B(on)
= 1.0 A, I
B(off)
= 2.5 A
L
C
= 200
mH
T
C
= 25°C
T
C
= 100°C
T
C
= 25°C
T
C
= 100°C
T
C
= 25°C
T
C
= 100°C
t
sv
t
c
t
fi
−
−
−
−
−
−
1.2
1.6
0.15
0.21
0.04
0.10
2.0
3.0
0.30
0.50
0.12
0.20
ms
ms
ms
(V
CC
= 125 Vdc, I
C
= 5.0 A,
I
B1
= I
B2
= 1.0 A, t
p
= 25
ms,
Duty Cycle
≤
1.0%)
t
d
t
r
t
s
t
f
−
−
−
−
0.025
0.5
1.8
0.23
0.1
1.5
3.0
0.7
ms
f
T
C
ob
4.0
−
14
80
−
−
MHz
pF
h
FE
−
8.0
5.0
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
40
30
Vdc
1.0
2.0
3.0
3.0
Vdc
1.2
1.6
1.5
I
S/b
−
See Figure 6
See Figure 7
V
CEO(sus)
I
CES
400
−
−
Vdc
mAdc
−
−
−
−
−
−
0.1
1.0
100
mAdc
Symbol
Min
Typ
Max
Unit
I
EBO
V
CE(sat)
V
BE(sat)
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2
MJE13007G
1.4
VBE(sat), BASE-EMITTER SATURATION
VOLTAGE (VOLTS)
I
C
/I
B
= 5
1.2
VCE(sat), COLLECTOR-EMITTER SATURATION
VOLTAGE (VOLTS)
10
5
2
1
0.5
0.2
0.1
T
C
= - 40°C
25°C
100°C
0.05
0.1
0.2
0.5
1
2
5
10
I
C
/I
B
= 5
1
T
C
= - 40°C
25°C
0.6
100°C
0.8
0.05
0.4
0.01 0.02
0.05
0.1
0.2
0.5
1
2
5
10
0.02
0.01
0.01 0.02
I
C
, COLLECTOR CURRENT (AMPS)
I
C
, COLLECTOR CURRENT (AMPS)
Figure 1. Base−Emitter Saturation Voltage
Figure 2. Collector−Emitter Saturation Voltage
3
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
T
J
= 25°C
2.5
2
1.5
1
0.5
0
0.01 0.02
I
C
= 1 A
I
C
= 5 A
I
C
= 3 A
I
C
= 8 A
0.05
0.1
0.2
0.5
1
2
3
5
10
I
B
, BASE CURRENT (AMPS)
Figure 3. Collector Saturation Region
100
10000
C
ib
C, CAPACITANCE (pF)
1000
T
J
= 25°C
T
J
= 100°C
hFE , DC CURRENT GAIN
25°C
10
40°C
C
ob
100
V
CE
= 5 V
1
0.01
0.1
1
10
10
0.1
1
10
100
1000
I
C
, COLLECTOR CURRENT (AMPS)
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 4. DC Current Gain
Figure 5. Capacitance
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3
MJE13007G
100
50
IC, COLLECTOR CURRENT (AMPS)
20
10
5
2
1
0.5
0.2
0.1
0.05
0.02
0.01
T
C
= 25°C
DC
5 ms
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
CURVES APPLY BELOW
RATED V
CEO
10
Extended SOA @ 1
ms,
10
ms
1
ms
10
ms
1 ms
IC, COLLECTOR CURRENT (AMPS)
8
6
4
T
C
≤
100°C
GAIN
≥
4
L
C
= 500
mH
V
BE(off)
-5 V
0V
-2 V
100 200
300
400
500
600
700
800
V
CEV
, COLLECTOR-EMITTER CLAMP VOLTAGE (VOLTS)
2
0
0
10
20 30
50 70 100 200 300 500
1000
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 6. Maximum Forward Bias
Safe Operating Area
Figure 7. Maximum Reverse Bias Switching
Safe Operating Area
1
0.8
SECOND BREAKDOWN
DERATING
0.6
THERMAL
DERATING
0.4
0.2
0
20
40
60
80
100
120
140
160
T
C
, CASE TEMPERATURE (°C)
Figure 8. Forward Bias Power Derating
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
−
V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 6 is based on T
C
= 25°C; T
J(pk)
is
variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated
when T
C
≥
25°C. Second breakdown limitations do not
derate the same as thermal limitations. Allowable current at
the voltages shown on Figure 6 may be found at any case
temperature by using the appropriate curve on Figure 8.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
Use of reverse biased safe operating area data (Figure 7)
is discussed in the applications information section.
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
POWER DERATING FACTOR
1
0.7
0.5
D = 0.5
D = 0.2
0.2
0.1
0.07
0.05
D = 0.1
D = 0.05
D = 0.02
t
1
t
2
0.02
D = 0.01
SINGLE PULSE
0.02
0.05
0.1
0.2
0.5
1
2
t, TIME (msec)
5
10
20
50
100
200
500
10 k
DUTY CYCLE, D = t
1
/t
2
0.01
0.01
P
(pk)
R
qJC
(t) = r(t) R
qJC
R
qJC
= 1.56°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
R
qJC
(t)
Figure 9. Typical Thermal Response for MJE13007
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MJE13007G
SPECIFICATION INFORMATION FOR SWITCHMODE APPLICATIONS
INTRODUCTION
The primary considerations when selecting a power
transistor for SWITCHMODE applications are voltage and
current ratings, switching speed, and energy handling
capability. In this section, these specifications will be
discussed and related to the circuit examples illustrated in
Table 2. (Note 1)
VOLTAGE REQUIREMENTS
Both blocking voltage and sustaining voltage are
important in SWITCHMODE applications.
Circuits B and C in Table 2 illustrate applications that
require high blocking voltage capability. In both circuits the
switching transistor is subjected to voltages substantially
higher than V
CC
after the device is completely off (see load
line diagrams at I
C
= I
leakage
≈
0 in Table 2). The blocking
capability at this point depends on the base to emitter
conditions and the device junction temperature. Since the
highest device capability occurs when the base to emitter
junction is reverse biased (V
CEV
), this is the recommended
and specified use condition. Maximum I
CEV
at rated V
CEV
is specified at a relatively low reverse bias (1.5 Volts) both
at 25°C and 100°C. Increasing the reverse bias will give
some improvement in device blocking capability.
The sustaining or active region voltage requirements in
switching applications occur during turn−on and turn−off. If
the load contains a significant capacitive component, high
current and voltage can exist simultaneously during turn−on
and the pulsed forward bias SOA curves (Figure 6) are the
proper design limits.
For inductive loads, high voltage and current must be
sustained simultaneously during turn−off, in most cases,
with the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping, RC
snubbing, load line shaping, etc. The safe level for these
devices is specified as a Reverse Bias Safe Operating Area
(Figure 7) which represents voltage−current conditions that
can be sustained during reverse biased turn−off. This rating
is verified under clamped conditions so that the device is
never subjected to an avalanche mode.
NOTE: 1. For detailed information on specific switching applications,
see ON Semiconductor Application Note AN719, AN873,
AN875, AN951.
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