1N4148WS/1N4448WS/1N914BWS
200mW High Speed SMD Switching Diode
Small Signal Diode
SOD-323F
B
Features
Fast switching device(T
rr
<4.0nS)
Surface device type mounting
Moisture sensitivity level 1
Matte Tin(Sn) lead finish with Nickel(Ni) underplate
Pb free version and RoHS compliant
Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
C
A
D
E
F
Unit (mm)
Min
1.15
2.30
0.25
1.60
0.80
0.05
Max
1.35
2.70
0.40
1.80
1.00
0.20
Unit (inch)
Min
Max
0.045 0.053
0.091 0.106
0.010 0.016
0.063 0.071
0.031 0.039
0.002 0.008
Mechanical Data
Case : Flat lead SOD-323 small outline plastic package
Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
High temperature soldering guaranteed: 260°C/10s
Polarity : Indicated by cathode band
Weight : 4.85±0.5 mg
Dimensions
A
B
C
D
E
F
Ordering Information
Part No.
1NxxxxWS RR
Package
SOD-323F
Packing
3Kpcs / 7" Reel
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Power Dissipation
Non-Repetitive Peak Reverse Voltage
Repetitive Peak Reverse Voltage
Repetitive Peak Forward Current
Mean Forward Current
Thermal Resistance (Junction to Ambient) (Note 1)
Junction and Storage Temperature Range
Symbol
P
D
V
RSM
V
RRM
I
FRM
I
O
RθJA
T
J
, T
STG
Value
200
100
75
300
150
500
-65 to + 150
Units
mW
V
V
mA
mA
°C/W
°C
Electrical Characteristics
Type Number
Reverse Breakdown Voltage
Forward Voltage
1N4448WS, 1N914BWS I
F
=5.0mA
1N4148W
I
F
=10.0mA
S
1N4448WS, 1N914BWS I
F
=100.0mA
Reverse Leakage Current
Junction Capacitance
Reverse Recovery Time (Note 2)
V
R
=20V
V
R
=75V
V
R
=0, f=1.0MHz
V
F
0.62
-
-
I
R
C
J
Trr
-
-
-
-
0.72
1.0
1.0
25
5.0
4.0
4.0
nA
μA
pF
ns
V
I
R
=100uA
I
R
=5uA
Symbol
V
(BR)
Min
100
75
Max
-
-
Units
V
Notes:1. Valid provided that electrodes are kept at ambient temperature
Notes:2. Reverse Recovery Test Conditions: I
F
=10mA, I
R
=60mA, R
L
=100Ω, I
RR
=1mA
Version : C09
1N4148WS/1N4448WS/1N914BWS
200mW High Speed SMD Switching Diode
Small Signal Diode
Rating and Sharacteristic Curves
FIG 1 Typical Forward Characteristics
100
FIG 2 Reverse Current vs Reverse Voltage
100
Instantaneous Forward Current
(A)
Reverse Current (uA)
10
1
10
Ta=25°C
Ta=25°C
1
0.1
0.01
0.1
0.001
0
0.2
0.01
Instantaneous Forward Volatge (V)
0.4
0.6
0.8
1
1.2
1.4
1.6
0
20
40
60
80
100
120
Reverse Voltage (V)
FIG 3 Admissible Power Dissipation Curve
250
0.5
FIG 4 Typical Junction Capacitance
Junction Capacitance (pF)
0
25
50
75
100
125
150
175
Power Dissipation (mW)
200
150
100
50
0
0.4
0.3
0.2
0.1
0
0
5
10
15
20
25
30
35
40
Ambient Temperature (°C)
Reverse Voltage (V)
Version : C09
stm32/stm8
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