The PE4128 is a high linearity, passive Quad MOSFET
Mixer for WCS and 2.4 GHz ISM applications exhibiting
high dynamic range performance over an LO drive range
of up to +20 dBm. This mixer integrates passive
matching networks to provide single ended interfaces for
the RF and LO ports, eliminating the need for external
RF baluns or matching networks. The PE4128 is
optimized for low-side injection using a 300-360 MHz
nominal IF frequency, and is also suitable for use in up-
conversion applications.
The PE4128 is manufactured in Peregrine’s patented
Ultra Thin Silicon (UTSi) CMOS process, offering the
performance of GaAs with the economy and integration
of conventional CMOS.
Figure 1. Functional Schematic Diagram
High Linearity Quad MOSFET
Mixer for WCS and 2.4 GHz
ISM Band Applications
Features
•
Integrated, single-ended RF &
LO interfaces
•
High linearity: IIP3>+30 dBm,
2.28
−
2.5 GHz (+17 dBm LO)
•
Low conversion loss: 8 dB max
(+17 dBm LO)
•
High isolation: typical LO-IF at
38 dB / LO-RF at 34 dB
•
Designed for low-side LO
injection
Figure 2. Package Type
1
180
o
Two-Way
Power
Divider
6
6-lead MLPM
3 x 3 mm
LO
IF
2
3
5
4
180
o
RF
Two-Way
Power
Divider
Table 1. Electrical Specifications @ +25 °C
(Z
S
= Z
L
= 50
Ω)
Parameter
Frequency Range:
LO
RF
IF*
Conversion Loss**
Isolation:
LO-RF
LO-IF
Input IP3
Input 1 dB Compression
Minimum
1920
2280
--
Typical
--
--
300-360
7.5
34
38
30
20
Maximum
2200
2500
--
Units
MHz
MHz
MHz
dB
dB
dB
dB
dBm
dBm
*An IF frequency range of 300-360 MHz is a nominal frequency. The IF frequency can be specified by the user as long as the RF and LO frequencies are within the specified
maximum and minimum limits.
**Conversion Loss includes loss of IF transformer (M/A COM ETC1-1-13, nominal loss of 0.7dB at 70 MHz).
Test conditions unless otherwise noted: LO input drive = 17 dBm.
PEREGRINE SEMICONDUCTOR CORP.
|
http://www.peregrine-semi.com
Copyright
Peregrine Semiconductor Corp. 2003
Page 1 of 6
PE4128
Advance Information
Figure 3. Pin Configuration
Electrostatic Discharge (ESD) Precautions
When handling this UTSi device, observe the same
precautions that you would use with other ESD-
sensitive devices. Although this device contains
circuitry to protect it from damage due to ESD,
precautions should be taken to avoid exceeding the
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