CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Spec. No. : C848J3-H
Issued Date : 2003.04.02
Revised Date :2009.02.04
Page No. : 1/7
BTD882J3
Features
•
Low V
CE
(sat), typically 0.25V at I
C
/ I
B
= 2A / 0.2A
•
Excellent current gain characteristics
•
Complementary to BTB772J3
•
RoHS compliant package
BV
CEO
I
C
R
CESAT
30V
3A
125mΩ typ.
Symbol
BTD882J3
Outline
TO-252
B：Base
C：Collector
E：Emitter
B C E
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Note : *1. Single Pulse Pw
≦
350us,Duty
≦
2%.
Symbol
V
CBO
V
CEO
V
EBO
I
C
(DC)
I
C
(Pulse)
Pd(Ta=25
℃
)
Pd(Tc=25
℃
)
Tj
Tstg
Limit
40
30
5
3
7
1
10
150
-55~+150
Unit
V
V
V
A
A
W
°C
°C
*1
BTD882J3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics
(Ta=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
*V
BE(sat)
*h
FE
1
*h
FE
2
fT
Cob
Min.
40
30
5
-
-
-
-
150
180
-
-
Typ.
-
-
-
-
-
0.25
-
-
-
90
45
Max.
-
-
-
1
1
0.5
2
-
560
-
-
Unit
V
V
V
μA
μA
V
V
-
-
MHz
pF
Spec. No. : C848J3-H
Issued Date : 2003.04.02
Revised Date :2009.02.04
Page No. : 2/7
Test Conditions
I
C
=50μA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=50μA, I
C
=0
V
CB
=30V, I
E
=0
V
EB
=3V, I
C
=0
I
C
=2A, I
B
=0.2A
I
C
=2A, I
B
=0.2A
V
CE
=2V, I
C
=20mA
V
CE
=2V, I
C
=1A
V
CE
=5V, I
C
=0.1A, f=100MHz
V
CB
=10V, f=1MHz
*Pulse Test : Pulse Width
≤380μs,
Duty Cycle≤2%
Classification Of h
FE
2
Rank
Range
P
180~390
E
270~560
Ordering Information
Device
BTD882J3
Package
TO-252
(RoHS compliant)
Shipping
2500 pcs/Tape & Reel
Marking
D882
BTD882J3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Emitter Grounded Output Characteristics
0.25
IB=500uA
Spec. No. : C848J3-H
Issued Date : 2003.04.02
Revised Date :2009.02.04
Page No. : 3/7
Emitter Grounded Output Characteristics
1
Collector Current---IC(A)
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
IB=0
IB=2.5mA
IB=2mA
IB=1.5mA
IB=1mA
IB=500uA
Collector Current---IC(A)
0.2
IB=400uA
0.15
0.1
0.05
0
0
IB=300uA
IB=200uA
IB=100uA
IB=0
1
2
3
4
5
Collector-to-Emitter Voltage---VCE(V)
6
0
1
2
3
4
5
Collector-to-Emitter Voltage---VCE(V)
6
Emitter Grounded Output Characteristics
3
IB=10mA
Emitter Grounded Output Characteristics
4.5
4
Collector Current---IC(A)
3.5
3
2.5
2
1.5
1
0.5
0
6
0
IB=0
IB=25mA
IB=20mA
IB=15mA
IB=10mA
IB=5mA
Collector Current---IC(A)
2.5
2
1.5
IB=8mA
IB=6mA
IB=4mA
IB=2mA
1
0.5
IB=0
0
0
1
2
3
4
5
Collector-to-Emitter Voltage---VCE(V)
1
2
3
4
5
Collector-to-Emitter Voltage---VCE(V)
6
Current Gain vs Collector Current
1000
VCE=5V
Saturation Voltage vs Collector Current
10000
Saturation Voltage---(mV)
VCE(SAT)
Current Gain---HFE
1000
IC=100IB
IC=50IB
100
VCE=2V
VCE=1V
100
IC=20IB
10
1
10
100
1000
Collector Current---IC(mA)
10000
10
1
10
100
1000
Collector Current---IC(mA)
10000
BTD882J3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves(Cont.)
Saturation Voltage vs Collector Current
10000
Saturation Voltage---(mV)
VBE(SAT)@IC=10IB
Spec. No. : C848J3-H
Issued Date : 2003.04.02
Revised Date :2009.02.04
Page No. : 4/7
Capacitance vs Reverse-Biased Voltage
1000
Capacitance---(pF)
Cib
100
1000
Cob
100
1
10
100
1000
Collector Current---IC(mA)
10000
10
0.1
1
10
Reverse-Biased Voltage---(V)
100
Power Derating Curve
1.2
Power Dissipation---PD(W)
12
10
8
6
4
2
0
Power Derating Curve
Power Dissipation---PD(W)
1
0.8
0.6
0.4
0.2
0
0
25
50
75
100 125 150
Ambient Temperature---TA(℃)
175
200
0
25
50
75 100 125 150
Case Temperature---TC(℃)
175
200
BTD882J3
CYStek Product Specification
CYStech Electronics Corp.
Reel Dimension
Spec. No. : C848J3-H
Issued Date : 2003.04.02
Revised Date :2009.02.04
Page No. : 5/7
Carrier Tape Dimension
BTD882J3
CYStek Product Specification
PCB设计
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