CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
Spec. No. : C316
Issued Date : 2005.12.21
Revised Date : 2006.03.17
Page No. : 1/9
BTC2383A3
Features
•
High breakdown voltage, BV
CEO
≥
200V
•
Large continuous collector current capability
•
Low collector saturation voltage
•
Complementary to BTA1013A3
•
Pb-free package
Symbol
BTC2383A3
Outline
TO-92
B：Base
C：Collector
E：Emitter
ECB
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
Pd
Tj
Tstg
Limits
280
200
6
1
0.5
900
150
-55~+150
Unit
V
V
V
A
A
mW
°C
°C
BTC2383A3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics
(Ta=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
*V
CE(sat)
*V
BE(sat)
*V
BE(on)
*h
FE
1
*h
FE
2
*h
FE
3
f
T
Cob
Min.
280
200
6
-
-
-
-
-
0.45
100
100
50
20
-
Typ.
-
-
-
-
-
0.2
-
-
-
-
-
-
100
-
Max.
-
-
-
100
100
0.5
1
0.9
0.75
-
320
-
-
20
Unit
V
V
V
nA
nA
V
V
V
V
-
-
-
MHz
pF
Spec. No. : C316
Issued Date : 2005.12.21
Revised Date : 2006.03.17
Page No. : 2/9
Test Conditions
I
C
=10µA
I
C
=10mA
I
E
=10µA
V
CB
=250V
V
EB
=6V
I
C
=500mA, I
B
=50mA
I
C
=1A, I
B
=50mA
I
C
=500mA, I
B
=50mA
V
CE
=5V, I
C
=5mA
V
CE
=5V, I
C
=50mA
V
CE
=5V, I
C
=200mA
V
CE
=5V, I
C
=1A
V
CE
=5V, I
C
=200mA
V
CB
=10V, I
E
=0A,f=1MHz
*Pulse Test: Pulse Width
≤380µs,
Duty Cycle≤2%
Classification Of h
FE
2
Rank
Range
O
100~200
Y
160~320
Ordering Information
Device
BTC2383A3
Package
TO-92
(Pb-free)
Shipping
2000 pcs / Tape & Box
Marking
C2383
BTC2383A3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
1000
Saturation Voltage---(mV)
VCE=5V
Spec. No. : C316
Issued Date : 2005.12.21
Revised Date : 2006.03.17
Page No. : 3/9
Saturation Voltage vs Collector Current
1000
VCESAT
IC=50IB
Current Gain---HFE
100
100
10
VCE=2V
VCE=1V
IC=10IB
IC=20IB
IC=30IB
1
1
10
100
1000
10000
Collector Current---IC(mA)
10
1
10
100
1000
10000
Collector Current---IC(mA)
Saturation Voltage vs Collector Current
10000
Power Dissipation---PD(W)
Power Derating Curve
1.8
1.5
1.2
0.9
0.6
0.3
0
Saturation Voltage---(V)
VBESAT@IC=10IB
1000
100
1
10
100
1000
Collector Current---IC(mA)
10000
0
25
50
75
100
125
150
175
200
Ambient Temperature---TA(℃)
BTC2383A3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves(Cont.)
Output Characteristics
0.7
IB=10mA
Spec. No. : C316
Issued Date : 2005.12.21
Revised Date : 2006.03.17
Page No. : 4/9
Output Characteristics
0.7
IB=10mA
IB=8m
A
IB=5mA
IB=3mA
IB=2mA
0.6
Collector Current---IC(A)
0.5
0.4
0.3
0.2
0.1
0.6
Collector Current---IC(A)
0.5
0.4
0.3
0.2
0.1
IB=6mA
IB=4mA
IB=3mA
IB=2.5mA
IB=2mA
IB=1.5m
IB=1mA
IB=500uA
IB=0
IB=1mA
IB=0
0
0
1
2
3
4
5
Collector-to-Emitter Voltage---VCE(V)
6
0
0
1
2
3
4
5
Collector-to-Emitter Voltage---VCE(V)
6
Output Capacitance vs Reverse Biased Voltage
100
Output Capacitance---Cob(pF)
10
Safe Operating Area
PT=1ms
Forward Current---IC(A)
1
PT=1s
PT=10ms
0.1
PT=100ms
0.01
10
1
10
Reverse Biased Voltage---VCB(V)
100
0.001
1
10
100
Forward Voltage---VCE(V)
1000
BTC2383A3
CYStek Product Specification
CYStech Electronics Corp.
Product Designation
Spec. No. : C316
Issued Date : 2005.12.21
Revised Date : 2006.03.17
Page No. : 5/9
BTC2383A3
CYStek Product Specification
嵌入式系统
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