CYStech Electronics Corp.
NPN Epitaxial Planar Transistor
Spec. No. : C652J3
Issued Date : 2003.05.16
Revised Date :2009.02.04
Page No. : 1/7
BTC1510J3
Description
BV
CEO
I
C
R
CESAT
150V
10A
220mΩ
The BTC1510J3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed
switching application.
Features:
•
High BV
CEO
•
Low V
CE(SAT)
•
High current gain
•
Monolithic construction with built-in base-emitter shunt resistors
•
TO-252 surface mount package
•
RoHS compliant package
Equivalent Circuit
BTC1510J3
C
B
R1≈8k
R2≈120
Outline
TO-252
B：Base
C：Collector
E：Emitter
E
B C E
BTC1510J3
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Note : *1. Single Pulse Pw=100ms
Spec. No. : C652J3
Issued Date : 2003.05.16
Revised Date :2009.02.04
Page No. : 2/7
Symbol
V
CBO
V
CEO
V
EBO
I
C
(DC)
I
C
(Pulse)
Pd(T
A
=25℃)
Pd(T
C
=25℃)
Tj
Tstg
Limits
150
150
5
10
15
1.75
20
150
-55~+150
Unit
V
V
V
*1
A
W
°C
°C
Characteristics
(Ta=25°C)
Symbol
BV
CBO
BV
CEO
I
CEO
I
CBO
I
EBO
*V
CE(sat)
1
*V
CE(sat)
2
*V
CE(sat)
3
*V
BE(sat)
*V
BE(on)
1
*V
BE(on)
2
*V
FEC
*h
FE
1
*h
FE
2
Min.
150
150
-
-
-
-
-
-
-
-
-
-
2
100
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
200
200
2
1.5
3
2
2
2.8
4.5
3
20
-
Unit
V
V
μA
μA
mA
V
V
V
V
V
V
V
K
-
Test Conditions
I
C
=100μA, I
E
=0
I
C
=1mA, I
B
=0
V
CE
=150V, I
E
=0
V
CB
=150V, I
E
=0
V
EB
=5V, I
C
=0
I
C
=5A, I
B
=10mA
I
C
=10A, I
B
=100mA
I
C
=5A, I
B
=2.5mA
I
C
=5A, I
B
=5mA
V
CE
=3V, I
C
=5A
V
CE
=3V, I
C
=10A
I
C
=5A
V
CE
=3V, I
C
=5A
V
CE
=3V, I
C
=10A
*Pulse Test : Pulse Width
≤380μs,
Duty Cycle≤2%
Ordering Information
Device
BTC1510J3
Package
TO-252
(RoHS compliant)
Shipping
2500 pcs / Tape & Reel
Marking
C1510
BTC1510J3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
100000
HFE@VCE=3V
Current Gain---
HFE
10000
125℃
1000
75℃
100
25℃
10
1
10
100
1000
10000
Collector Current---IC(mA)
Saturation Voltage---(mV)
10000
VCE(SAT)@IC=250IB
Spec. No. : C652J3
Issued Date : 2003.05.16
Revised Date :2009.02.04
Page No. : 3/7
Saturation Voltage vs Collector Current
25℃
1000
75℃
100
100
1000
125℃
10000
Collector Current---IC(mA)
Saturation Voltage vs Collcetor Current
10000
VCE(SAT)@IC=2000IB
Saturation Voltage---(mV)
75℃
25℃
1000
Saturation Voltage---(mV)
10000
Saturation Voltage vs Colltctor Current
VCE(SAT)@IC=500IB
25℃
1000
75℃
125℃
100
1000
Collector Current---IC(mA)
125℃
100
10000
100
1000
Collector Current---IC(mA)
10000
Saturation Voltage vs Collcetor Current
10000
Power Derating Curve
2
Power Dissipation---P
D
(W)
VBE(ON)@VCE=3V
On Voltage---(mV)
25℃
75℃
1.75
1.5
1.25
1
0.75
0.5
0.25
1000
125℃
100
100
1000
Collector Current---IC(mA)
10000
0
0
50
100
150
200
Ambient Temperature---T
A
(℃)
BTC1510J3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves(Cont.)
Power Derating Curve
25
Spec. No. : C652J3
Issued Date : 2003.05.16
Revised Date :2009.02.04
Page No. : 4/7
Power Dissipation---PD(W)
20
15
10
5
0
0
50
100
150
200
Case Temperature---TC(℃)
BTC1510J3
CYStek Product Specification
CYStech Electronics Corp.
Reel Dimension
Spec. No. : C652J3
Issued Date : 2003.05.16
Revised Date :2009.02.04
Page No. : 5/7
Carrier Tape Dimension
BTC1510J3
CYStek Product Specification
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