CYStech Electronics Corp.
Low V
CE(sat)
PNP Epitaxial Planar Transistor
Spec. No. : C817D3
Issued Date : 2005.05.16
Revised Date :2006.04.21
Page No. : 1/4
BTB1424AD3
Features
•
Excellent DC current gain characteristics
•
Low Saturation Voltage, V
CE(sat)
=-0.3V(typ) @I
C
=-2A, I
B
=-100mA.
•
Complementary to BTD2150AD3
•
Pb-free package
Symbol
BTB1424AD3
Outline
TO-126ML
B：Base
C：Collector
E：Emitter
EC B
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulsed)
(Note 1)
Power Dissipation(T
A
=25℃)
Power Dissipation(T
C
=25℃)
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
d
T
j
T
stg
Limits
-50
-50
-6
-3
-5
1
10
150
-55~+150
Unit
V
V
V
A
W
°C
°C
Note 1: Single pulse, Pw≤10ms, Duty Cycle≤30%.
BTB1424AD3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics
(Ta=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
*V
CE(sat)
*h
FE
f
T
Cob
Min.
-50
-50
-6
-
-
-
-
82
-
-
Typ.
-
-
-
-
-
-
-
-
240
35
Max.
-
-
-
-0.1
-0.1
-0.4
-0.5
560
-
-
Unit
V
V
V
µA
µA
V
V
-
MHz
pF
Spec. No. : C817D3
Issued Date : 2005.05.16
Revised Date :2006.04.21
Page No. : 2/4
Test Conditions
I
C
=-50µA
I
C
=-1mA
I
E
=-50µA
V
CB
=-20V
V
EB
=-5V
I
C
=-1A, I
B
=-50mA
I
C
=-2A, I
B
=-100mA
V
CE
=-2V, I
C
=-500mA
V
CE
=-2V, I
C
=-500mA, f=100MHz
V
CB
=-10V, f=1MHz
*Pulse Test: Pulse Width
≤380µs,
Duty Cycle≤2%
Classification Of h
FE
Rank
h
FE
range
P
82~180
Q
120~270
R
180~390
S
270~560
BTB1424AD3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
1000
Spec. No. : C817D3
Issued Date : 2005.05.16
Revised Date :2006.04.21
Page No. : 3/4
Saturation Voltage vs Collector Current
10000
Saturation Voltage---(mV)
VCE=5V
Current Gain---HFE
1000
VCESAT@IC=60IB
100
VCE=2V
100
VCE=1V
10
VCESAT=30IB
VCESAT=10IB
10
1
10
100
1000
10000
Collector Current---IC(mA)
1
1
10
100
1000
Collector Current---IC(mA)
10000
Saturation Voltage vs Collector Current
10000
Power Dissipation---PD(W)
Saturation Voltage---(mV)
Power Derating Curve
1.2
1
0.8
0.6
0.4
0.2
0
1000
VBESAT@IC=10IB
100
1
10
100
1000
Collector Current---IC(mA)
10000
0
50
100
150
Case Temperature---TA(℃)
200
Power Derating Curve
12
Power Dissipation---PD(W)
10
8
6
4
2
0
0
50
100
150
Case Temperature---TC(℃)
200
BTB1424AD3
CYStek Product Specification
CYStech Electronics Corp.
TO-126ML Dimension
Marking:
Spec. No. : C817D3
Issued Date : 2005.05.16
Revised Date :2006.04.21
Page No. : 4/4
B1424
Style: Pin 1.Emitter 2.Collector 3.Base
3-Lead TO-126ML Plastic Package
CYStek Package Code: D3
*: Typical
DIM
A
A1
b
b1
c
D
E
Inches
Min.
Max.
0.118
0.134
0.071
0.087
0.026
0.034
0.046
0.054
0.018
0.024
0.307
0.323
0.425
0.441
Millimeters
Min.
Max.
3.000
3.400
1.800
2.200
0.660
0.860
1.170
1.370
0.450
0.600
7.800
8.200
10.800
11.200
DIM
e
e1
L
L1
P
Φ
1
Φ
2
Inches
Min.
*0.090
0.176
0.594
0.051
0.159
0.118
0.122
0.183
0.610
0.059
0.167
0.126
0.130
Max.
Millimeters
Min.
Max.
*2.28
4.460
4.660
15.100
15.500
1.300
1.500
4.040
4.240
3.000
3.200
3.100
3.300
Notes:
1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
•
Lead: 42 Alloy ; solder plating
•
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
•
CYStek reserves the right to make changes to its products without notice.
•
CYStek
semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTB1424AD3
CYStek Product Specification
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