CYStech Electronics Corp.
Low Vcesat PNP Epitaxial Planar Transistor
Spec. No. : C816M3-A
Issued Date : 2003.05.26
Revised Date : 2005.11.28
Page No. : 1/5
BTB1427M3
Features
•
Low V
CE
(sat), V
CE
(sat)=-0.6 V (typical), at I
C
/ I
B
= -4A / -0.1A
•
Excellent DC current gain characteristics
Symbol
BTB1427M3
Outline
SOT-89
B：Base
C：Collector
E：Emitter
B C E
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
Pd
Pd
Tj
Tstg
Limits
-20
-15
-6
-5
-10
(Note 1)
0.5
2
(Note 2)
150
-55~+150
Unit
V
V
V
A
W
°C
°C
Note : 1
.
Single Pulse Pw=10ms
2. When mounted on a 40
×40 ×0.7
mm ceramic board.
BTB1427M3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics
(Ta=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
*h
FE
f
T
Cob
Min.
-20
-15
-6
-
-
-
120
-
-
Typ.
-
-
-
-
-
-
-
120
60
Max.
-
-
-
-0.5
-0.5
-1.0
560
-
-
Unit
V
V
V
µA
µA
V
-
MHz
pF
Spec. No. : C816M3-A
Issued Date : 2003.05.26
Revised Date : 2005.11.28
Page No. : 2/5
Test Conditions
I
C
=-50µA, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-50µA, I
C
=0
V
CB
=-20V, I
E
=0
V
EB
=-5V, I
C
=0
I
C
=-4A, I
B
=-0.1A
V
CE
=-2V, I
C
=-0.5A
V
CE
=-6V, I
C
=-50mA, f =30MHz
V
CB
=-20V, f =1MHz
*Pulse Test : Pulse Width
≤380µs,
Duty Cycle≤2%
Classification Of h
FE
Rank
Range
Q
120~270
R
180~390
S
270~560
Ordering Information
Device
BTB1386M3
Package
SOT-89
Shipping
1000 pcs / Tape & Reel
Marking
BH
BTB1427M3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
1000
Spec. No. : C816M3-A
Issued Date : 2003.05.26
Revised Date : 2005.11.28
Page No. : 3/5
Saturation Voltage vs Collector Current
1000
Saturation Voltage---VCE(SAT)(mV)
VCE=5V
Current Gain---HFE
100
IC=40IB
10
IC=20IB
IC=10IB
1
1
10
100
1000
10000
100
VCE=2V
VCE=1V
10
1
10
100
1000
10000
Collector Current---IC(mA)
Collector Current---IC(mA)
Saturation Voltage vs Collector Current
10000
Saturation Voltage---VBE(SAT)(mV)
Power Dissipation---PD(mW)
2.5
2
1.5
1
0.5
0
1
10
100
1000
10000
0
Power Derating Curve
See Note 2 on page
IC=10IB
1000
100
50
100
150
200
Collector Current---IC(mA)
Ambient Temperature --- Ta(℃ )
BTB1427M3
CYStek Product Specification
CYStech Electronics Corp.
Reel Dimension
Spec. No. : C816M3-A
Issued Date : 2003.05.26
Revised Date : 2005.11.28
Page No. : 4/5
Carrier Tape Dimension
BTB1427M3
CYStek Product Specification
CYStech Electronics Corp.
SOT-89 Dimension
A
Spec. No. : C816M3-A
Issued Date : 2003.05.26
Revised Date : 2005.11.28
Page No. : 5/5
Marking:
1
2
C
3
H
BH*
B
D
Style: Pin 1. Base 2. Collector 3. Emitter
E
F
G
I
3-Lead SOT-89 Plastic
Surface Mounted Package
CYStek Package Code: M3
*: Typical
DIM
A
B
C
D
E
Inches
Min.
Max.
0.1732 0.1811
0.1594 0.1673
0.0591 0.0663
0.0945 0.1024
0.01417 0.0201
Millimeters
Min.
Max.
4.40
4.60
4.05
4.25
1.50
1.70
2.40
2.60
0.36
0.51
DIM
F
G
H
I
Inches
Min.
Max.
0.0583 0.0598
0.1165 0.1197
0.0551 0.0630
0.0138 0.0161
Millimeters
Min.
Max.
1.48
1.527
2.96
3.04
1.40
1.60
0.35
0.41
Notes:
1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
•
Lead: 42 Alloy ; solder plating
•
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
•
CYStek reserves the right to make changes to its products without notice.
•
CYStek
semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTB1427M3
CYStek Product Specification
嵌入式系统
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