CYStech Electronics Corp.
High Voltage PNP Epitaxial Planar Transistor
Spec. No. : C236L3
Issued Date : 2005.08.16
Revised Date : 2005.08.18
Page No. : 1/4
BTA1727L3
Features
•
High breakdown voltage, BV
CEO
=-400V
•
Low saturation voltage
•
High switching speed.
•
Complementary to BTD2568L3
•
Pb-free package
Symbol
BTA1727L3
Outline
SOT-223
C
E
B：Base
C：Collector
E：Emitter
C
B
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Base Current
Power Dissipation @T
C
=25℃
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
Pd
Tj
Tstg
Limits
-400
-400
-6
-300
-1
-100
5
150
-55~+150
Unit
V
V
V
mA
A
mA
W
°C
°C
BTA1727L3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics
(Ta=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
1
*V
CE(sat)
2
*V
BE(sat)
1
*V
BE(sat)
2
*V
BE(on)
*h
FE
1
*h
FE
2
*h
FE
3
*h
FE
4
f
T
Cob
Min.
-400
-400
-6
-
-
-
-
-
-
-
50
90
90
40
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
90
7
Max.
-
-
-
-100
-100
-0.3
-0.5
-0.8
-0.95
-0.95
-
260
260
-
-
-
Unit
V
V
V
nA
nA
V
V
V
V
V
-
-
-
-
MHz
pF
Spec. No. : C236L3
Issued Date : 2005.08.16
Revised Date : 2005.08.18
Page No. : 2/4
Test Conditions
I
C
=-100µA, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-10µA, I
C
=0
V
CB
=-400V, I
E
=0
V
EB
=-4V, I
C
=0
I
C
=-10mA, I
B
=-1mA
I
C
=-50mA, I
B
=-5mA
I
C
=-10mA, I
B
=-1mA
I
C
=-50mA, I
B
=-5mA
V
CE
=-10V, I
C
=-50mA
V
CE
=-10V, I
C
=-1mA
V
CE
=-10V, I
C
=-10mA
V
CE
=-10V, I
C
=-50mA
V
CE
=-10V, I
C
=-100mA
V
CE
=-5V, I
C
=-50mA, f =100MHz
V
CB
=-20V, f=1MHz
*Pulse Test : Pulse Width
≤380µs,
Duty Cycle≤2%
BTA1727L3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
1000
10000
VCESAT
VCE=10V
Spec. No. : C236L3
Issued Date : 2005.08.16
Revised Date : 2005.08.18
Page No. : 3/4
Saturation Voltage vs Collector Current
Saturation Voltage-(mV)
Current Gain---
HFE
1000
IC=30IB
100
100
IC=10IB
IC=20IB
VCE=5V
10
1
10
100
1000
Collector Current ---IC(mA)
10
1
10
Collector Current ---IC(mA)
100
Saturation Voltage vs Collector Current
10000
6
5
4
3
2
1
100
1
10
100
1000
Collector Current--- IC(mA)
0
0
Power Derating Curve
VBESAT@IC=10IB
1000
Power Dissipation---PD(W)
Saturation Voltage-(mV)
50
100
150
200
Ambient Temperature---TA(℃)
BTA1727L3
CYStek Product Specification
CYStech Electronics Corp.
SOT-223 Dimension
A
Spec. No. : C236L3
Issued Date : 2005.08.16
Revised Date : 2005.08.18
Page No. : 4/4
Marking:
B
1
2
3
C
AJ
D
E
F
G
H
a1
I
a2
Style: Pin 1.Base 2.Collector 3.Emitter
3-Lead SOT-223 Plastic
Surface Mounted Package
CYStek Package Code: L3
*: Typical
DIM
A
B
C
D
E
F
Inches
Min.
Max.
0.1142
0.1220
0.2638
0.2874
0.1299
0.1457
0.0236
0.0315
*0.0906
-
0.2480
0.2638
Millimeters
Min.
Max.
2.90
3.10
6.70
7.30
3.30
3.70
0.60
0.80
*2.30
-
6.30
6.70
DIM
G
H
I
a1
a2
Inches
Min.
Max.
0.0551
0.0709
0.0098
0.0138
0.0008
0.0039
o
*13
-
o
0
10
o
Millimeters
Min.
Max.
1.40
1.80
0.25
0.35
0.02
0.10
o
*13
-
o
0
10
o
Notes:
1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
•
Lead: 42 Alloy; solder plating
•
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
•
CYStek reserves the right to make changes to its products without notice.
•
CYStek
semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTA1727L3
CYStek Product Specification
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