CYStech Electronics Corp.
Low Vcesat PNP Epitaxial Planar Transistor
Spec. No. : C601I3
Issued Date : 2005.10.14
Revised Date : 2009.02.04
Page No. : 1/ 5
BTA1952I3
Features
BV
CEO
I
C
R
CESAT
-100V
-5A
150mΩ
•
Low V
CE
(sat), V
CE
(sat)=-0.45 V (typical), at I
C
/ I
B
= -3A / -0.15A
•
Excellent DC current gain characteristics
•
Wide SOA
•
Complementary to BTC5103I3
•
RoHS compliant package
Symbol
BTA1952I3
Outline
TO-251
B：Base
C：Collector
E：Emitter
B CCE
B
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Note : *1
.
Single Pulse Pw=10ms
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(Pulse)
Pd(T
A
=25℃)
Pd(T
C
=25℃)
Tj
Tstg
Limits
-100
-60
-5
-5
-10
1
25
150
-55~+150
Unit
V
V
V
*1
A
W
°C
°C
BTA1952I3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics
(Ta=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
*V
BE(sat)
*h
FE
1
*h
FE
2
f
T
Min.
-100
-60
-5
-
-
-
-
70
30
-
Typ.
-
-
-
-
-
-0.45
-
-
-
60
Max.
-
-
-
-1
-1
-0.6
-1.2
240
-
-
Unit
V
V
V
μA
μA
V
V
-
-
MHz
Spec. No. : C601I3
Issued Date : 2005.10.14
Revised Date : 2009.02.04
Page No. : 2/ 5
Test Conditions
I
C
=-50μA, I
E
=0
I
C
=-10mA, I
B
=0
I
E
=-50μA, I
C
=0
V
CB
=-100V, I
E
=0
V
EB
=-5V, I
C
=0
I
C
=-3A, I
B
=-0.15A
I
C
=-3A, I
B
=-0.15A
V
CE
=-1V, I
C
=-1A
V
CE
=-1V, I
C
=-3A
V
CE
=-4V, I
C
=-1A, f=30MHz
*Pulse Test : Pulse Width
≤380μs,
Duty Cycle≤2%
Ordering Information
Device
BTA1952I3
Package
TO-251
(RoHS compliant)
Shipping
80 pcs / tube, 50 tubes / box
Marking
A1952
BTA1952I3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
1000
10000
VCE(SAT)
Saturation Voltage---(mV)
Current Gain---HFE
1000
IC=20IB
Spec. No. : C601I3
Issued Date : 2005.10.14
Revised Date : 2009.02.04
Page No. : 3/ 5
Saturation Voltage vs Collector Current
100
100
VCE=1V
10
IC=10IB
10
1
10
100
1000
10000
Collector Current---IC(mA)
1
1
10
100
1000
10000
Collector Current---IC(mA)
Saturation Voltage vs Collector Current
10000
Power Derating Curve
1.2
Power Dissipation---PD(W)
Saturation Voltage---(mV)
VBE(SAT) @ IC=10IB
1
0.8
0.6
0.4
0.2
0
1000
100
1
10
100
1000
Collector Current---IC(mA)
10000
0
50
100
150
200
Ambient Temperature---TA(℃)
Power Derating Curve
30
Power Dissipation---PD(W)
25
20
15
10
5
0
0
50
100
150
200
Case Temperature---TC(℃)
BTA1952I3
CYStek Product Specification
CYStech Electronics Corp.
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5
°C
Spec. No. : C601I3
Issued Date : 2005.10.14
Revised Date : 2009.02.04
Page No. : 4/ 5
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature
Min(T
S
min)
−Temperature
Max(T
S
max)
−Time(ts
min
to ts
max
)
Time maintained above:
−Temperature
(T
L
)
−
Time (t
L
)
Peak Temperature(T
P
)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25
°C
to peak temperature
Sn-Pb eutectic Assembly
3°C/second max.
100°C
150°C
60-120 seconds
183°C
60-150 seconds
240 +0/-5
°C
10-30 seconds
6°C/second max.
6 minutes max.
Pb-free Assembly
3°C/second max.
150°C
200°C
60-180 seconds
217°C
60-150 seconds
260 +0/-5
°C
20-40 seconds
6°C/second max.
8 minutes max.
BTA1952I3
CYStek Product Specification
CYStech Electronics Corp.
TO-251 Dimension
A
B
C
D
Spec. No. : C601I3
Issued Date : 2005.10.14
Revised Date : 2009.02.04
Page No. : 5/ 5
Marking:
A1952
F
3
E
K
2
1
J
G
I
H
Style: Pin 1.Base 2.Collector 3.Emitter
3-Lead TO-251 Plastic Package
CYStek Package Code: I3
*: Typical
DIM
A
B
C
D
E
F
Inches
Min.
Max.
0.0177
0.0217
0.0354
0.0591
0.0177
0.0236
0.0866
0.0945
0.2441
0.2677
0.2677
0.2835
Millimeters
Min.
Max.
0.45
0.55
0.90
1.50
0.45
0.60
2.20
2.40
6.20
6.80
6.80
7.20
DIM
G
H
I
J
K
Inches
Min.
Max.
0.2559
-
-
*0.1811
-
0.0449
-
0.0346
0.2047
0.2165
Millimeters
Min.
Max.
6.50
-
-
*4.60
-
1.14
-
0.88
5.20
5.50
Notes:
1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
•
Lead: KFC; pure tin plated
•
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
•
CYStek reserves the right to make changes to its products without notice.
•
CYStek
semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTA1952I3
CYStek Product Specification
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