CYStech Electronics Corp.
PNP Epitaxial Planar Transistor
Spec. No. : C599N3
Issued Date : 2005.12.30
Revised Date : 2008.04.22
Page No. : 1/8
BTA1542N3
Features
•
Large current capability
•
Low collector-to-emitter saturation voltage
•
High speed switching
•
Ultra small package facilitates miniaturization in end products
•
High allowable power dissipation
•
Pb-free package
Symbol
BTA1542N3
Outline
SOT-23
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature
DC
Pulse
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
Pd
Tj
Tstg
Limits
-30
-20
-5
-3
-5
-600
225
0.9
(Note)
150
-55~+150
Unit
V
V
V
A
mA
mW
W
°C
°C
Note : When device mounted on a ceramic board (600mm²
×
0.8mm)
BTA1542N3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics
(Ta=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
1
*V
CE(sat)
1
*V
BE(sat)
*h
FE
f
T
Cob
ton
tstg
tf
Min.
-30
-20
-5
-
-
-
-
-
250
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
380
25
50
270
25
Max.
-
-
-
-100
-100
-300
-200
-1.2
560
-
-
-
-
-
Unit
V
V
V
nA
nA
mV
mV
V
-
MHz
pF
ns
ns
ns
Spec. No. : C599N3
Issued Date : 2005.12.30
Revised Date : 2008.04.22
Page No. : 2/8
Test Conditions
I
C
=-10μA, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-10μA, I
C
=0
V
CB
=-30V, I
E
=0
V
EB
=-4V, I
C
=0
I
C
=-1.5A, I
B
=-30mA
I
C
=-1.5A, I
B
=-75mA
I
C
=-1.5A, I
B
=-30mA
V
CE
=-2V, I
C
=-500mA
V
CE
=-10V, I
C
=-500mA
V
CB
=-10V, I
E
=0A, f=1MHz
V
CC
=-12V, R
L
=24
Ω
,
I
C
=20I
B
1=-20I
B
2=-500mA
*Pulse Test : Pulse Width
≤380μs,
Duty Cycle≤2%
Ordering Information
Device
BTA1542N3
Package
SOT-23
(Pb-free)
Shipping
3000 pcs / Tape & Reel
Marking
SH
BTA1542N3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Output Characteristics
0.25
IB=500uA
Spec. No. : C599N3
Issued Date : 2005.12.30
Revised Date : 2008.04.22
Page No. : 3/8
Output Characteristics
1.2
IB=2.5mA
Collector Current---IC(A)
IB=400uA
IB=300uA
IB=200uA
IB=100uA
Collector Current---IC(A)
0.2
0.15
0.1
0.05
1
0.8
0.6
0.4
0.2
0
IB=1mA
IB=500uA
IB=0
IB=2mA
IB=1.5mA
IB=0
0
0
1
2
3
4
5
Collector-to-Emitter Voltage---VCE(V)
6
0
1
2
3
4
5
Collector-to-Emitter Voltage---VCE(V)
6
Output Characteristics
3.5
3
IB=10mA
IB=8mA
IB=6mA
Output Characteristics
6
IB=25mA
Collector Current---IC(A)
Collector Current---IC(A)
5
IB=20mA
2.5
2
1.5
1
0.5
4
3
2
1
IB=15mA
IB=10mA
IB=5mA
IB=4mA
IB=2mA
IB=0
IB=0
0
0
1
2
3
4
5
Collector-to-Emitter Voltage---VCE(V)
6
0
0
1
2
3
4
5
Collector-to-Emitter Voltage---VCE(V)
6
Current Gain vs Collector Current
1000
VCE=5V
Saturation Voltage vs Collector Current
10000
VCE(SAT)
Saturation Voltage---(mV)
Current Gain---HFE
1000
IC=50IB
IC=30IB
100
VCE=2V
10
IC=10IB
IC=20IB
100
1
10
100
1000
Collector Current---IC(mA)
10000
1
1
10
100
1000
10000
Collector Current---IC(mA)
BTA1542N3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves(Cont.)
Saturation Voltage vs Collector Current
10000
1000
Power Dissipation---PD(mW)
Spec. No. : C599N3
Issued Date : 2005.12.30
Revised Date : 2008.04.22
Page No. : 4/8
Power Derating Curves
Saturation Voltage---(mV)
IC=10IB
900
800
700
600
500
400
300
200
100
0
See note
on page 1
1000
100
1
10
100
1000
Collector Current---IC(mA)
10000
0
50
100
150
200
Ambient Temperature---TA(℃)
BTA1542N3
CYStek Product Specification
CYStech Electronics Corp.
Reel Dimension
Spec. No. : C599N3
Issued Date : 2005.12.30
Revised Date : 2008.04.22
Page No. : 5/8
Carrier Tape Dimension
BTA1542N3
CYStek Product Specification
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