FAP-450
FAP-IIS Series
> Features
-
-
-
-
-
-
-
High Speed Switching
Low On-Resistance
No Secondary Breakdown
Low Driving Power
High Voltage
V
GS
= ± 30V Guarantee
Repetitive Avalanche Rated
N-channel MOS-FET
500V
0,38Ω
14A
190W
> Outline Drawing
> Applications
-
-
-
-
Switching Regulators
UPS
DC-DC converters
General Purpose Power Amplifier
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (T
C
=25°C),
unless otherwise specified
Item
Drain-Source-Voltage
Continous Drain Current
Pulsed Drain Current
Gate-Source-Voltage
Avalanche Current
Maximum Avalanche Energy
Max. Power Dissipation
Operating and Storage Temperature Range
Symbol
Rating
Unit
V
DS
500
V
I
D
14
A
I
D(puls)
56
A
V
GS
±30
V
*2
I
AR
A
14
*1
E
AS
mJ
760
P
D
190
W
T
ch
150
°C
T
stg
-55 ~ +150
°C
*1) V
CC
= 50V; L = 7mH; I
AS
= 14A; R
G
= 50
Ω;
Starting T
ch
= 25°C (See Fig. 1 & 2)
*2) Repetitive Rating : Pulse Width limited by max. Channel Temperature
Symbol
BV
DSS
V
GS(th)
I
DSS
I
R
g
C
C
C
t
t
t
t
I
C
C
C
V
t
Q
GSS
DS(on)
fs
iss
oss
rss
d(on)
r
d(off)
f
AV
iss
oss
rss
SD
rr
rr
> Equivalent Circuit
- Electrical Characteristics (T
C
=25°C),
unless otherwise specified
Item
Drain-Source Breakdown-Voltage
Gate Threshhold Voltage
Zero Gate Voltage Drain Current
Gate Source Leakage Current
Drain Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On-Time t
on
(t
on
=t
d(on)
+t
r
)
Turn-Off-Time t
off
(t
on
=t
d(off)
+t
f
)
Avalanche Capability
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
- Thermal Characteristics
Item
Thermal Resistance
Test conditions
I
D
=1mA
V
GS
=0V
I
D
=250µA
V
DS=
V
GS
V
DS
=500V
T
ch
=25°C
T
ch
=125°C
V
GS
=0V
V
GS
=±30V
V
DS
=0V
I
D
=8A
V
GS
=10V
I
D
=8A
V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MHz
V
CC
=250V
V
GS
=10V
R
G
= 6,1W
R
D
= 20Ω
T
ch
=25°C
L = 100µH
V
CC
=400V
V
GS
=10V
I
D
= 14A
I
F
=2xI
DR
V
GS
=0V T
ch
=25°C
I
F
=I
DR
V
GS
=0V
-dI
F
/dt=100A/µs T
ch
=25°C
Min.
500
3,0
Typ.
3,0
Max.
4,0
25
1,0
100
0,38
Unit
V
V
µA
mA
nA
Ω
S
pF
pF
pF
ns
ns
ns
ns
A
nC
nC
nC
V
ns
µC
7
10
0,32
14
2200
330
140
18
70
130
70
4
170
20
90
1,5
1,0
700
9,0
Symbol
R
th(ch-a)
R
th(ch-c)
Test conditions
channel to ambient
channel to case
Min.
Typ.
Max.
35
0,65
Unit
°C/W
°C/W
Collmer Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX - 75370 - 972-233-1589 - FAX 972-233-0481 - http://www.collmer.com
N-channel MOS-FET
500V
0,38Ω
FAP-450
FAP-IIS Series
Drain-Source-On-State Resistance vs. T
ch
R
DS(on)
= f(T
ch
); I
D
=8A; V
GS
=10V; 80µs pulse test
14A
190W
> Characteristics
Typical Output Characteristics
I
D
=f(V
DS
); 80µs pulse test; T
C
=25°C
Typical Transfer Characteristics
I
D
=f(V
GS
); 80µs pulse test;V
DS
=25V; T
ch
=25°C
↑
I
D
[A]
↑
1
R
DS(ON)
[Ω]
↑
2
I
D
[A]
3
V
DS
[V]
→
T
ch
[°C]
→
V
GS
[V]
→
Typical Drain-Source-On-State-Resistance vs. I
D
R
DS(on)
=f(I
D
); 80µs pulse test; T
C
=25°C
Typical Forward Transconductance vs. I
D
g
fs
=f(I
D
); 80µs pulse test; V
DS
=25V; T
ch
=25°C
Gate Threshold Voltage vs. T
ch
V
GS(th)
=f(T
ch
); I
D
=250µA; V
DS
=V
GS
↑
R
DS(ON)
[Ω]
↑
g
fs
[S]
↑
5
V
GS(th)
[V]
4
6
I
D
[A]
→
I
D
[A]
→
T
ch
[°C]
→
Typical Capacitances vs. V
DS
C=f(V
DS
); V
GS
=0V; f=1MHz
Max. Avalanche Energy Derating
vs. Starting Channel Temperature
E
as
=f(starting T
ch
): Peak I
L
= 14A; V
CC
=50V
Forward Characteristics of Reverse Diode
I
F
=f(V
SD
); 80µs pulse test; V
GS
=0V
↑
C [F]
↑
Eas [mJ]
↑
8
I
F
[A]
7
9
V
DS
[V]
→
Starting T
ch
[°C]
→
V
SD
[V]
→
Allowable Power Dissipation vs. T
C
P
D
=f(Tc)
Safe Operation Area
I
D
=f(V
DS
): Single Pulse, Tc=25°C
Transient Thermal impedance
Zth(ch-c=f(t); D=t/T
↑
P
D
[W]
10
↑
I
D
[A]
12
↑
Z
th(ch-c)
[K/W]
Z
thch
=f(t) parameter:D=t/T
T
c
[°C]
→
V
DS
[V]
→
t [s]
→
This specification is subject to change without notice!
N-channel MOS-FET
500V
0,38Ω
FAP-450
FAP-IIS Series
Typical Gate Charge
V
GS
= f(Q
g
); I
D
=14A
14A
190W
> Characteristics
Drain Current Derating
I
D
= f(T
C
)
↑
I
D
[A]
↑
V
DS
[V]
T
C
[°C]
→
Q
g
[nC]
→
Fig. 1: Test Circuit
Fig. 2: Operating Waveforms
This
Dallas, TX - (972)
change without notice!
P.O. Box 702708 -
specification is subject to
733-1700 - (972) 381-9991 (fax)
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