FMW40N60S1FDHF
Super J-MOS series
Features
Pb-free lead terminal
RoHS compliant
uses Halogen-free molding compound
TO-247
http://www.fujielectric.com/products/semiconductor/
FUJI POWER MOSFET
N-Channel enhancement mode power MOSFET
Outline Drawings [mm]
Equivalent circuit schematic
②Drain
Applications
For switching
①
②
③
①
Gate
①
CONNECTION
①
GATE
②
DRAIN
③
SOURCE
②
③
③Source
①
②
③
DIMENSIONS ARE IN MILLIMETERS.
Absolute Maximum Ratings at T
C
=25°C (unless otherwise specified)
Parameter
Drain-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
Repetitive and Non-Repetitive
Maximum Avalanche Current
Non-Repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Peak Diode Recovery -di/dt
Maximum Power Dissipation
Operating and Storage Temperature range
Note *1 : Limited by maximum channel temperature.
Note *2 : T
ch
≤150°C, See Fig.1 and Fig.2
Note *3 : Starting T
ch
=25°C, I
AS
=4.6A, L=120mH, V
DD
=60V, R
G
=50Ω, See Fig.1 and Fig.2
E
AS
limited by maximum channel temperature and avalanche current.
Note *4 : I
F
≤ -I
D
, -di/dt=100A/μs, V
DS
peak ≤ 600V, T
ch
≤ 150°C.
Note *5 : I
F
≤ -I
D
, dV/dt=30kV/μs, V
DS
peak ≤ 600V, T
ch
≤ 150°C.
Symbol
V
DS
V
DSX
I
D
I
DP
V
GS
I
AR
E
AS
dV
DS
/dt
dV/dt
-di/dt
P
D
T
ch
T
stg
Characteristics
600
600
±40
±25
±120
±30
7.6
1390
50
30
100
2.5
315
150
-55 to +150
Unit
V
V
A
A
A
V
A
mJ
kV/μs
kV/μs
A/μs
W
°C
°C
Remarks
V
GS
=-30V
Tc=25°C Note*1
Tc=100°C Note*1
Note*1
Note *2
Note *3
V
DS
≤ 600V
Note *4
Note *5
T
a
=25°C
T
C
=25°C
• Static Ratings
Parameter
Electrical Characteristics at T
C
=25°C (unless otherwise specified)
Symbol
BV
DSS
V
GS(th)
Conditions
I
D
=250μA
V
GS
=0V
I
D
=1.5mA
V
DS
=V
GS
V
DS
=600V
V
GS
=0V
V
DS
=480V
V
GS
=0V
V
GS
= ± 30V
V
DS
=0V
I
D
=20A
V
GS
=10V
f=1MHz, open drain
T
ch
=25°C
T
ch
=125°C
min.
600
3
-
-
-
-
-
typ.
-
4
-
300
10
0.079
1.1
max.
-
5
25
μA
-
100
0.093
-
nA
Ω
Ω
Unit
V
V
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
I
DSS
Gate-Source Leakage Current
Drain-Source On-State Resistance
Gate resistance
I
GSS
R
DS(on)
R
G
1
8508
OCTOBER 2015
FMW40N60S1FDHF
• Dynamic Ratings
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective output capacitance,
energy related (Note *6)
Effective output capacitance,
time related (Note *7)
Turn-On Time
Turn-Off Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source crossover Charge
Symbol
g
fs
C
iss
C
oss
C
rss
C
o(er)
C
o(tr)
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
Q
SW
Conditions
I
D
=20A
V
DS
=25V
V
DS
=400V
V
GS
=0V
f=250kHz
V
GS
=0V
V
DS
=0…400V
V
GS
=0V
V
DS
=0…400V
I
D
=constant
V
DD
=400V, V
GS
=10V
I
D
=20A, R
G
=13Ω
See Fig.3 and Fig.4
V
DD
=400V, I
D
=40A
V
GS
=10V
See Fig.5
FUJI POWER MOSFET
http://www.fujielectric.com/products/semiconductor/
min.
14.5
-
-
-
-
-
-
-
-
-
-
-
-
-
typ.
29
2865
83
6.5
216
758
124
29
139
19
104
27
46
14
max.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
S
pF
ns
nC
Note *6 : C
o(er)
is a fixed capacitance that gives the same stored energy as C
oss
while V
DS
is rising from 0 to 400V.
Note *7 : C
o(tr)
is a fixed capacitance that gives the same charging times as C
oss
while V
DS
is rising from 0 to 400V.
• Reverse Diode
Parameter
Avalanche Capability
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
Peak Reverse Recovery Current
Symbol
I
AV
V
SD
t
rr
Q
rr
I
rp
Conditions
L=26.7mH, T
ch
=25°C
See Fig.1 and Fig.2
I
F
=40A, V
GS
=0V
T
ch
=25°C
I
F
=40A, V
DD
=400V
-di/dt=100A/μs
T
ch
=25°C
See Fig.6 and Fig.7
min.
7.6
-
typ.
-
1.1
200
-
-
1.35
13.5
max.
-
1.35
-
-
-
Unit
A
V
ns
μC
A
Thermal Resistance
Parameter
Channel to Case
Channel to Ambient
Symbol
R
th(ch-c)
R
th(ch-a)
min.
-
-
typ.
-
-
max.
0.40
50
Unit
°C/W
°C/W
2
FMW40N60S1FDHF
Allowable Power Dissipation
P
D
=f(T
c
)
100
300
FUJI POWER MOSFET
http://www.fujielectric.com/products/semiconductor/
Safe Operating Area
I
D
=f(V
DS
): Duty=0(Single pulse), T
c
=25
°
C
t=
1
µ
s
10
µ
s
350
250
10
200
P
D
[W]
150
100
I
D
[A]
1
100
µ
s
0.1
50
Power loss waveform :
Square waveform
P
D
t
1ms
0
0
25
50
75
T
c
[
°
C]
100
125
150
0.01
1
10
V
DS
[V]
100
1000
130
120
110
100
90
80
I
D
[A]
Typical Output Characteristics
I
D
=f(V
DS
): 80
µ
s pulse test, T
ch
=25
°
C
20V
10V
80
70
60
Typical Output Characteristics
I
D
=f(V
DS
): 80
µ
s pulse test, T
ch
=150
°
C
10V
20V
8V
7.5V
7V
8V
I
D
[A]
50
40
30
20
10
0
70
60
50
40
30
20
10
0
0
5
10
V
DS
[V]
15
20
7.5V
7V
6.5V
V
GS
=6V
6.5V
6V
V
GS
=5.5V
25
0
5
10
V
DS
[V]
15
20
25
0.35
Typical Drain-Source on-state Resistance
R
DS
(on)=f(I
D
): 80
µ
s pulse test, T
ch
=25
°
C
6V
6.5V
7V
7.5V
8V
0.70
0.65
0.60
0.55
Typical Drain-Source on-state Resistance
R
DS
(on)=f(I
D
): 80
µ
s pulse test, T
ch
=150
°
C
5.5V
6V
6.5V
0.30
0.25
10V
R
DS
(on) [
Ω
]
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
7V
7.5V
R
DS
(on) [
Ω
]
0.20
8V
10V
0.15
V
GS
=20V
V
GS
=20V
0.10
0.05
0.10
0.05
0.00
0
10
20
30
40
50
60
70
80
90 100 110 120 130
I
D
[A]
0.00
0
10
20
30
40
I
D
[A]
50
60
70
80
3
FMW40N60S1FDHF
Drain-Source On-state Resistance
R
DS
(on)=f(T
ch
): I
D
=20A, V
GS
=10V
FUJI POWER MOSFET
http://www.fujielectric.com/products/semiconductor/
Gate Threshold Voltage vs. T
ch
V
GS
(th)=f(T
ch
): V
DS
=V
GS
, I
D
=1.5mA
6
0.3
5
typ.
0.2
R
DS
(on) [
Ω
]
4
V
GS
(th) [V]
max.
3
0.1
typ.
2
1
0.0
-50
-25
0
25
50
T
ch
[
°
C]
75
100
125
150
0
-50
-25
0
25
50
75
T
ch
[
°
C]
100
125
150
100
Typical Transfer Characteristic
I
D
=f(V
GS
): 80
µ
s pulse test, V
DS
=25V
Typical Transconductance
g
fs
=f(I
D
): 80
µ
s pulse test, V
DS
=25V
100
T
ch
=25℃
10
I
D
[A]
10
1
g
fs
[S]
150℃
T
ch
=25℃
150℃
1
0.1
0
1
2
3
4
5
V
GS
[V]
6
7
8
9
10
0.1
0.1
1
I
D
[A]
10
100
Typical Forward Characteristics of Reverse Diode
I
F
=f(V
SD
): 80
µ
s pulse test
100
Typical Capacitance
C=f(V
DS
): V
GS
=0V, f=250kHz
100000
10000
Ciss
10
I
F
[A]
1000
150℃
T
ch
=25℃
C [pF]
100
1
10
Coss
Crss
0.1
0.0
0.5
1.0
V
SD
[V]
1.5
2.0
1
0.1
1
10
V
DS
[V]
100
4
FMW40N60S1FDHF
Typical Coss stored energy
FUJI POWER MOSFET
http://www.fujielectric.com/products/semiconductor/
Typical Switching Characteristics vs. ID T
ch
=25
°
C
t=f(I
D
): V
dd=
400V, V
GS
=10V/0V, R
G
=13
Ω
10000
30
25
20
E
oss
[uJ]
1000
t
d
(on)
15
t [ns]
t
d
(off)
10
100
t
r
5
t
f
10
0
100
200
300
V
DS
[V]
400
500
600
0.1
1
10
100
0
10
Typical Gate Charge Characteristics
V
GS
=f(Q
g
): I
D
=40A, T
ch
=25
°
C
Maximum Avalanche Energy vs. startingTch
E(AV)=f(starting T
ch
): V
cc
=60V, I(A
V
)<=7.6A
3000
I
AS
=2.3A
V
dd
=480V
8
120V
2500
400V
2000
E
AV
[mJ]
6
V
GS
[V]
1500
I
AS
=4.6A
4
1000
2
I
AS
=7.6A
500
0
0
20
40
60
Q
g
[nC]
80
100
120
0
0
25
50
75
starting T
ch
[
°
C]
100
125
150
10
1
Transient Thermal Impedance
Z
th
(ch-c)=f(t): D=0
10
0
Z
th
(ch-c) [℃/W]
10
-1
10
-2
10
-3
10
-6
10
-5
10
-4
10
-3
t [sec]
10
-2
10
-1
10
0
5
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