TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal
| 参数名称 | 属性值 |
| 厂商名称 | NXP(恩智浦) |
| 包装说明 | SMALL OUTLINE, R-PDSO-G4 |
| Reach Compliance Code | unknown |
| ECCN代码 | EAR99 |
| 其他特性 | LOW NOISE |
| 外壳连接 | SOURCE |
| 配置 | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 7 V |
| 最大漏极电流 (ID) | 0.03 A |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| 最大反馈电容 (Crss) | 0.035 pF |
| 最高频带 | ULTRA HIGH FREQUENCY BAND |
| JESD-30 代码 | R-PDSO-G4 |
| 元件数量 | 1 |
| 端子数量 | 4 |
| 工作模式 | DUAL GATE, ENHANCEMENT MODE |
| 最高工作温度 | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 极性/信道类型 | N-CHANNEL |
| 认证状态 | Not Qualified |
| 表面贴装 | YES |
| 端子形式 | GULL WING |
| 端子位置 | DUAL |
| 晶体管应用 | AMPLIFIER |
| 晶体管元件材料 | SILICON |
| BF904R-TAPE-13 | 575R25IE | BF904-TAPE-13 | BF904-TAPE-7 | |
|---|---|---|---|---|
| 描述 | TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal | Temperature Compensated Crystal Oscillator | TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal | TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal |
| 厂商名称 | NXP(恩智浦) | - | NXP(恩智浦) | NXP(恩智浦) |
| 包装说明 | SMALL OUTLINE, R-PDSO-G4 | - | SMALL OUTLINE, R-PDSO-G4 | SMALL OUTLINE, R-PDSO-G4 |
| Reach Compliance Code | unknown | - | unknown | unknown |
| ECCN代码 | EAR99 | - | EAR99 | EAR99 |
| 其他特性 | LOW NOISE | - | LOW NOISE | LOW NOISE |
| 外壳连接 | SOURCE | - | SOURCE | SOURCE |
| 配置 | SINGLE WITH BUILT-IN DIODE | - | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 7 V | - | 7 V | 7 V |
| 最大漏极电流 (ID) | 0.03 A | - | 0.03 A | 0.03 A |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | - | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| 最大反馈电容 (Crss) | 0.035 pF | - | 0.035 pF | 0.035 pF |
| 最高频带 | ULTRA HIGH FREQUENCY BAND | - | ULTRA HIGH FREQUENCY BAND | ULTRA HIGH FREQUENCY BAND |
| JESD-30 代码 | R-PDSO-G4 | - | R-PDSO-G4 | R-PDSO-G4 |
| 元件数量 | 1 | - | 1 | 1 |
| 端子数量 | 4 | - | 4 | 4 |
| 工作模式 | DUAL GATE, ENHANCEMENT MODE | - | DUAL GATE, ENHANCEMENT MODE | DUAL GATE, ENHANCEMENT MODE |
| 最高工作温度 | 150 °C | - | 150 °C | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY | - | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | - | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | - | SMALL OUTLINE | SMALL OUTLINE |
| 极性/信道类型 | N-CHANNEL | - | N-CHANNEL | N-CHANNEL |
| 认证状态 | Not Qualified | - | Not Qualified | Not Qualified |
| 表面贴装 | YES | - | YES | YES |
| 端子形式 | GULL WING | - | GULL WING | GULL WING |
| 端子位置 | DUAL | - | DUAL | DUAL |
| 晶体管应用 | AMPLIFIER | - | AMPLIFIER | AMPLIFIER |
| 晶体管元件材料 | SILICON | - | SILICON | SILICON |
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