BF861A; BF861B; BF861C
N-channel junction FETs
Rev. 04 — 24 September 2004
Product data sheet
1. Product profile
1.1 General description
N-channel symmetrical junction field effect transistors in a SOT23 package.
CAUTION
The device is supplied in an antistatic package. The gate-source input must be protected against
static discharge during transport or handling.
MSC895
1.2 Features
s
High transfer admittance
s
Low feedback capacitance
s
Low input capacitance
s
Low noise.
1.3 Applications
s
Preamplifiers for AM tuners in car radios.
1.4 Quick reference data
Table 1:
Symbol
V
DS
I
DSS
Quick reference data
Parameter
drain-source voltage
(DC)
drain current
BF861A
BF861B
BF861C
P
tot
y
fs
forward transfer
admittance;
BF861A
BF861B
BF861C
C
iss
C
rss
input capacitance
reverse transfer
capacitance
V
GS
= 0 V; V
DS
= 8 V
V
GS
= 0 V; V
DS
= 8 V
V
GS
= 0 V; V
DS
= 8 V
f = 1 MHz
f = 1 MHz
12
16
20
-
-
-
-
-
-
-
20
25
30
10
2.7
mS
mS
mS
pF
pF
V
GS
= 0 V; V
DS
= 8 V
V
GS
= 0 V; V
DS
= 8 V
V
GS
= 0 V; V
DS
= 8 V
2
6
12
-
-
-
-
-
6.5
15
25
250
mA
mA
mA
mW
Conditions
Min
-
Typ
-
Max
25
Unit
V
total power dissipation up to T
amb
= 25
°C
Philips Semiconductors
BF861A; BF861B; BF861C
N-channel junction FETs
2. Pinning information
Table 2:
Pin
1
2
3
Discrete pinning
Description
source
drain
gate
3
3
1
2
Simplified outline
Symbol
sym053
1
2
SOT23
3. Ordering information
Table 3:
Type
number
BF861A
BF861B
BF861C
Ordering information
Package
Name
-
-
-
Description
plastic surface mounted package; 3 leads
plastic surface mounted package; 3 leads
plastic surface mounted package; 3 leads
Version
SOT23
SOT23
SOT23
4. Marking
Table 4:
BF861A
BF861B
BF861C
[1]
* = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
Marking codes
Marking code
[1]
28*
29*
30*
Type number
5. Limiting values
Table 5:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GSO
V
DGO
I
G
Parameter
drain-source voltage (DC)
gate-source voltage
drain-gate voltage (DC)
forward gate current (DC)
open drain
open source
Conditions
Min
-
-
-
-
Max
25
25
25
10
Unit
V
V
V
mA
9397 750 13395
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 04 — 24 September 2004
2 of 13
Philips Semiconductors
BF861A; BF861B; BF861C
N-channel junction FETs
Table 5:
Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
P
tot
T
stg
T
j
Parameter
total power dissipation
storage temperature
operating junction
temperature
Device mounted on an FR4 printed-circuit board.
Conditions
up to T
amb
= 25
°C
[1]
Min
-
−65
-
Max
250
+150
150
Unit
mW
°C
°C
[1]
300
P
tot
(mW)
200
mrc166
100
0
0
50
100
T
amb
(°C)
150
Fig 1. Power derating curve.
6. Thermal characteristics
Table 6:
Symbol
R
th(j-a)
[1]
Thermal characteristics
Parameter
thermal resistance from junction
to ambient
Conditions
[1]
Typ
500
Unit
K/W
Device mounted on an FR4 printed-circuit board.
7. Characteristics
Table 7:
Characteristics
T
j
= 25
°
C; V
DS
= 8 V; V
GS
= 0 V unless otherwise specified.
Symbol
V
(BR)GSS
Parameter
gate-source
breakdown voltage
Conditions
I
G
=
−1 µA
Min
−25
Typ
-
Max
-
Unit
V
9397 750 13395
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 04 — 24 September 2004
3 of 13
Philips Semiconductors
BF861A; BF861B; BF861C
N-channel junction FETs
Table 7:
Characteristics
…continued
T
j
= 25
°
C; V
DS
= 8 V; V
GS
= 0 V unless otherwise specified.
Symbol
V
GSoff
Parameter
gate-source cut-off
voltage
BF861A
BF861B
BF861C
V
GSS
I
DSS
gate-source forward
voltage
drain current
BF861A
BF861B
BF861C
I
GSS
y
fs
gate cut-off current
forward transfer
admittance
BF861A
BF861B
BF861C
g
os
common source
output conductance
BF861A
BF861B
BF861C
C
iss
C
rss
V
n
/√B
input capacitance
reverse transfer
capacitance
f = 1 MHz
f = 1 MHz
-
-
-
-
-
-
-
-
-
-
2.1
1.5
200
250
300
10
2.7
-
µS
µS
µS
pF
pF
nV/√Hz
12
16
20
-
-
-
20
25
30
mS
mS
mS
V
GS
=
−20
V;
V
DS
= 0 V
2
6
12
-
-
-
-
-
6.5
15
25
−1
mA
mA
mA
nA
I
D
= 1
µA
I
D
= 1
µA
I
D
= 1
µA
V
DS
= 0 V; I
G
= 1 mA
−0.2
−0.5
−0.8
-
-
-
-
-
−1
−1.5
−2
1
V
V
V
V
Conditions
Min
Typ
Max
Unit
equivalent input noise V
GS
= 0 V; f = 1 MHz
voltage
9397 750 13395
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 04 — 24 September 2004
4 of 13
Philips Semiconductors
BF861A; BF861B; BF861C
N-channel junction FETs
30
I
DSS
(mA)
20
mbd461
300
g
os
(µS)
200
mbd462
10
100
0
0
−0.5
−1
−1.5
−2
V
GSoff
(V)
0
0
5
10
15
20
25
I
DSS
(mA)
V
DS
= 8 V.
V
DS
= 8 V.
V
GS
= 0 V.
Fig 2. Drain current as a function of gate-source
cut-off voltage; typical values.
30
| y
fs
|
(mS)
20
mbd463
Fig 3. Common-source output conductance as a
function of drain current; typical values.
mbd464
25
| y
fs
|
(mS)
20
BF861C
BF861B
BF861A
15
10
10
5
0
0
5
10
15
20
25
I
DSS
(mA)
0
0
5
10
15
I
D
(mA)
20
V
DS
= 8 V.
V
GS
= 0 V.
V
DS
= 8 V.
Fig 4. Forward transfer admittance as a function of
drain current; typical values.
Fig 5. Forward transfer admittance as a function of
drain current; typical values.
9397 750 13395
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 04 — 24 September 2004
5 of 13
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
