BF859A概述

TRANSISTOR 0.1 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-202, BIP General Purpose Power

BF859A规格参数

	BF859A	BF858A	BF857A
描述	TRANSISTOR 0.1 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-202, BIP General Purpose Power	TRANSISTOR 0.1 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-202, BIP General Purpose Power	TRANSISTOR 0.1 A, 160 V, NPN, Si, POWER TRANSISTOR, TO-202, BIP General Purpose Power
厂商名称	NXP(恩智浦)	NXP(恩智浦)	NXP(恩智浦)
Reach Compliance Code	compliant	unknown	unknown
ECCN代码	EAR99	EAR99	EAR99
外壳连接	COLLECTOR	COLLECTOR	COLLECTOR
最大集电极电流 (IC)	0.1 A	0.1 A	0.1 A
基于收集器的最大容量	3 pF	3 pF	3 pF
集电极-发射极最大电压	300 V	250 V	160 V
配置	SINGLE	SINGLE	SINGLE
最小直流电流增益 (hFE)	26	26	26
JEDEC-95代码	TO-202	TO-202	TO-202
JESD-30 代码	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
元件数量	1	1	1
端子数量	3	3	3
最高工作温度	150 °C	150 °C	150 °C
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
极性/信道类型	NPN	NPN	NPN
功耗环境最大值	6 W	6 W	6 W
认证状态	Not Qualified	Not Qualified	Not Qualified
表面贴装	NO	NO	NO
端子形式	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
端子位置	SINGLE	SINGLE	SINGLE
晶体管应用	AMPLIFIER	AMPLIFIER	AMPLIFIER
晶体管元件材料	SILICON	SILICON	SILICON
标称过渡频率 (fT)	90 MHz	90 MHz	90 MHz
VCEsat-Max	1 V	1 V	1 V
包装说明	-	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3

器件捷径: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ