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MMBT2222LT1,
MMBT2222ALT1
MMBT2222ALT1 is a Preferred Device
General Purpose Transistors
NPN Silicon
Features
http://onsemi.com
COLLECTOR
3
•
Pb-Free Packages are Available
MAXIMUM RATINGS
Rating
Collector - Emitter Voltage
MMBT2222LT1
MMBT2222ALT1
Collector - Base Voltage
MMBT2222LT1
MMBT2222ALT1
Emitter - Base Voltage
MMBT2222LT1
MMBT2222ALT1
Collector Current - Continuous
Collector Current - Peak (Note 3)
I
C
I
CM
V
EBO
5.0
6.0
600
1100
mAdc
mAdc
1
V
CBO
60
75
Vdc
Symbol
V
CEO
30
40
Vdc
Value
Unit
Vdc
1
BASE
2
EMITTER
3
2
SOT-23
CASE 318
STYLE 6
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR- 5 Board
(Note 1) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction-to-Ambient
Total Device Dissipation Alumina
Substrate (Note 2) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction-to-Ambient
Junction and Storage Temperature Range
Symbol
P
D
225
1.8
R
qJA
P
D
300
2.4
R
qJA
T
J
, T
stg
417
-55 to +150
mW
mW/°C
°C/W
°C
1
556
mW
mW/°C
°C/W
Max
Unit
MARKING DIAGRAM
xxx M
G
G
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR- 5 = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
3. Reference SOA curve.
xxx = 1P or M1B
M = Date Code*
G
= Pb-Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2007
1
July, 2007 - Rev. 7
Publication Order Number:
MMBT2222LT1/D
MMBT2222LT1, MMBT2222ALT1
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector - Emitter Breakdown Voltage (I
C
= 10 mAdc, I
B
= 0)
MMBT2222A
Collector - Base Breakdown Voltage (I
C
= 10
mAdc,
I
E
= 0)
MMBT2222A
Emitter - Base Breakdown Voltage (I
E
= 10
mAdc,
I
C
= 0)
MMBT2222A
Collector Cutoff Current (V
CE
= 60 Vdc, V
EB(off)
= 3.0 Vdc)
Collector Cutoff Current (V
CB
= 50 Vdc, I
E
= 0)
(V
CB
= 60 Vdc, I
E
= 0)
(V
CB
= 50 Vdc, I
E
= 0, T
A
= 125°C)
(V
CB
= 60 Vdc, I
E
= 0, T
A
= 125°C)
Emitter Cutoff Current (V
EB
= 3.0 Vdc, I
C
= 0)
Base Cutoff Current (V
CE
= 60 Vdc, V
EB(off)
= 3.0 Vdc)
ON CHARACTERISTICS
DC Current Gain
(I
C
= 0.1 mAdc, V
CE
= 10 Vdc)
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc)
(I
C
= 10 mAdc, V
CE
= 10 Vdc)
(I
C
= 10 mAdc, V
CE
= 10 Vdc, T
A
= -55°C)
(I
C
= 150 mAdc, V
CE
= 10 Vdc) (Note 4)
(I
C
= 150 mAdc, V
CE
= 1.0 Vdc) (Note 4)
(I
C
= 500 mAdc, V
CE
= 10 Vdc) (Note 4)
Collector - Emitter Saturation Voltage (Note 4)
(I
C
= 150 mAdc, I
B
= 15 mAdc)
(I
C
= 500 mAdc, I
B
= 50 mAdc)
Base - Emitter Saturation Voltage (Note 4)
(I
C
= 150 mAdc, I
B
= 15 mAdc)
(I
C
= 500 mAdc, I
B
= 50 mAdc)
SMALL-SIGNAL CHARACTERISTICS
Current - Gain - Bandwidth Product (Note 5)
(I
C
= 20 mAdc, V
CE
= 20 Vdc, f = 100 MHz)
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
Input Capacitance
(V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz)
Input Impedance
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
(I
C
= 10 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
Voltage Feedback Ratio
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
(I
C
= 10 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
Small - Signal Current Gain
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
(I
C
= 10 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
Output Admittance
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
(I
C
= 10 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
MMBT2222
MMBT2222A
h
ie
MMBT2222A
MMBT2222A
h
re
MMBT2222A
MMBT2222A
h
fe
MMBT2222A
MMBT2222A
h
oe
MMBT2222A
MMBT2222A
5.0
25
35
200
50
75
300
375
mmhos
-
-
8.0
4.0
-
2.0
0.25
8.0
1.25
X 10
- 4
f
T
MMBT2222
MMBT2222A
C
obo
-
C
ibo
-
-
30
25
kW
8.0
pF
250
300
-
-
pF
MHz
h
FE
35
50
75
35
100
50
30
40
V
CE(sat)
MMBT2222
MMBT2222A
MMBT2222
MMBT2222A
V
BE(sat)
MMBT2222
MMBT2222A
MMBT2222
MMBT2222A
-
0.6
-
-
1.3
1.2
2.6
2.0
-
-
-
-
0.4
0.3
1.6
1.0
Vdc
-
-
-
-
300
-
-
-
Vdc
-
MMBT2222
MMBT2222
MMBT2222
MMBT2222A
MMBT2222
MMBT2222A
MMBT2222
MMBT2222A
MMBT2222A
MMBT2222A
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CEX
I
CBO
30
40
60
75
5.0
6.0
-
-
-
-
-
-
-
-
-
-
-
-
-
10
0.01
0.01
10
10
100
20
Vdc
Vdc
Vdc
nAdc
mAdc
Symbol
Min
Max
Unit
I
EBO
I
BL
nAdc
nAdc
MMBT2222A only
MMBT2222
MMBT2222A
http://onsemi.com
2
MMBT2222LT1, MMBT2222ALT1
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
SMALL-SIGNAL CHARACTERISTICS
Collector Base Time Constant
(I
E
= 20 mAdc, V
CB
= 20 Vdc, f = 31.8 MHz)
Noise Figure
(I
C
= 100
mAdc,
V
CE
= 10 Vdc, R
S
= 1.0 kW, f = 1.0 kHz)
SWITCHING CHARACTERISTICS (MMBT2222A only)
Delay Time
Rise Time
Storage Time
Fall Time
(V
CC
= 30 Vdc, V
BE(off)
= - 0.5 Vdc,
I
C
= 150 mAdc, I
B1
= 15 mAdc)
(V
CC
= 30 Vdc, I
C
= 150 mAdc,
I
B1
= I
B2
= 15 mAdc)
t
d
t
r
t
s
t
f
-
-
-
-
10
25
225
ns
60
ns
rb, C
c
MMBT2222A
NF
MMBT2222A
-
4.0
-
150
dB
ps
Symbol
Min
Max
Unit
4. Pulse Test: Pulse Width
v
300
ms,
Duty Cycle
v
2.0%.
5. f
T
is defined as the frequency at which |h
fe
| extrapolates to unity.
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+ 30 V
+16 V
0
-2 V
1.0 to 100
ms,
DUTY CYCLE
≈
2.0%
1 kW
< 2 ns
200
+16 V
0
C
S
* < 10 pF
-14 V
< 20 ns
1k
1N914
C
S
* < 10 pF
1.0 to 100
ms,
DUTY CYCLE
≈
2.0%
+ 30 V
200
-4 V
Scope rise time < 4 ns
*Total shunt capacitance of test jig, connectors, and oscilloscope.
Figure 1. Turn-On Time
Figure 2. Turn-Off Time
1000
700
500
hFE, DC CURRENT GAIN
300
200
T
J
= 125°C
25°C
100
70
50
30
20
10
0.1
-55°C
V
CE
= 1.0 V
V
CE
= 10 V
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0 10
20 30
I
C
, COLLECTOR CURRENT (mA)
50
70
100
200
300
500 700 1.0 k
Figure 3. DC Current Gain
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3
MMBT2222LT1, MMBT2222ALT1
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
1.0
T
J
= 25°C
0.8
0.6
I
C
= 1.0 mA
10 mA
150 mA
500 mA
0.4
0.2
0
0.005
0.01
0.02 0.03
0.05
0.1
0.2
0.3
0.5
1.0
I
B
, BASE CURRENT (mA)
2.0
3.0
5.0
10
20
30
50
Figure 4. Collector Saturation Region
200
100
70
50
t, TIME (ns)
30
20
10
7.0
5.0
3.0
2.0
5.0 7.0
10
20 30
50 70 100
I
C
, COLLECTOR CURRENT (mA)
200 300
500
I
C
/I
B
= 10
T
J
= 25°C
t
r
@ V
CC
= 30 V
t
d
@ V
EB(off)
= 2.0 V
t
d
@ V
EB(off)
= 0
500
300
200
100
70
50
30
20
10
7.0
5.0
5.0 7.0 10
20 30
50 70 100
I
C
, COLLECTOR CURRENT (mA)
200
300
500
t′
s
= t
s
- 1/8 t
f
V
CC
= 30 V
I
C
/I
B
= 10
I
B1
= I
B2
T
J
= 25°C
t, TIME (ns)
t
f
Figure 5. Turn-On Time
Figure 6. Turn-Off Time
10
8.0
NF, NOISE FIGURE (dB)
I
C
= 1.0 mA, R
S
= 150
W
500
mA,
R
S
= 200
W
100
mA,
R
S
= 2.0 kW
50
mA,
R
S
= 4.0 kW
R
S
= OPTIMUM
R
S
=
SOURCE
R
S
=
RESISTANCE
10
f = 1.0 kHz
8.0
NF, NOISE FIGURE (dB)
I
C
= 50
mA
100
mA
500
mA
1.0 mA
6.0
6.0
4.0
4.0
2.0
2.0
0
0.01 0.02 0.05 0.1 0.2
0.5 1.0 2.0
5.0 10
20
50 100
0
50
100 200
500 1.0 k 2.0 k
5.0 k 10 k 20 k
50 k 100 k
f, FREQUENCY (kHz)
R
S
, SOURCE RESISTANCE (OHMS)
Figure 7. Frequency Effects
Figure 8. Source Resistance Effects
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