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MMBT5401LT1
Preferred Device
High Voltage Transistor
PNP Silicon
Features
•
Pb−Free Packages are Available
MAXIMUM RATINGS
Rating
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
−150
−160
−5.0
−500
Unit
Vdc
Vdc
Vdc
mAdc
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COLLECTOR
3
1
BASE
2
EMITTER
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
MARKING
DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
FR−5 Board (Note 1)
T
A
= 25°C
Derate Above 25°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation
Alumina Substrate (Note 2)
T
A
= 25°C
Derate Above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
Symbol
P
D
Max
225
1.8
R
qJA
P
D
556
300
2.4
R
qJA
T
J
, T
stg
417
−55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
2L = Device Code
M = Month Code
SOT−23 (TO−236)
CASE 318
STYLE 6
2L M
ORDERING INFORMATION
Device
MMBT5401LT1
MMBT5401LT1G
MMBT5401LT3
MMBT5401LT3G
Package
SOT−23
SOT−23
(Pb−Free)
SOT−23
Shipping
†
3000 Tape & Reel
3000 Tape & Reel
10,000 Tape & Reel
1. FR−5 = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in 99.5% alumina.
SOT−23 10,000 Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2005
1
January, 2005 − Rev. 4
Publication Order Number:
MMBT5401LT1/D
MMBT5401LT1
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(I
C
= −1.0 mAdc, I
B
= 0)
Collector −Base Breakdown Voltage
(I
C
= −100
mAdc,
I
E
= 0)
Emitter −Base Breakdown Voltage
(I
E
= −10
mAdc,
I
C
= 0)
Collector Cutoff Current
(V
CB
= −120 Vdc, I
E
= 0)
(V
CB
= −120 Vdc, I
E
= 0, T
A
= 100°C)
V
(BR)CEO
−150
V
(BR)CBO
−160
V
(BR)EBO
−5.0
I
CES
−
−
−50
−50
nAdc
mAdc
−
−
Vdc
−
Vdc
Vdc
ON CHARACTERISTICS
DC Current Gain
(I
C
= −1.0 mAdc, V
CE
= −5.0 Vdc)
(I
C
= −10 mAdc, V
CE
= −5.0 Vdc)
(I
C
= −50 mAdc, V
CE
= −5.0 Vdc)
Collector −Emitter Saturation Voltage
(I
C
= −10 mAdc, I
B
= −1.0 mAdc)
(I
C
= −50 mAdc, I
B
= −5.0 mAdc)
Base −Emitter Saturation Voltage
(I
C
= −10 mAdc, I
B
= −1.0 mAdc)
(I
C
= −50 mAdc, I
B
= −5.0 mAdc)
h
FE
50
60
50
V
CE(sat)
−
−
V
BE(sat)
−
−
−1.0
−1.0
−0.2
−0.5
Vdc
−
240
−
Vdc
−
SMALL−SIGNAL CHARACTERISTICS
Current −Gain — Bandwidth Product
(I
C
= −10 mAdc, V
CE
= −10 Vdc, f = 100 MHz)
Output Capacitance
(V
CB
= −10 Vdc, I
E
= 0, f = 1.0 MHz)
Small Signal Current Gain
(I
C
= −1.0 mAdc, V
CE
= −10 Vdc, f = 1.0 kHz)
Noise Figure
(I
C
= −200
mAdc,
V
CE
= −5.0 Vdc, R
S
= 10
W,
f = 1.0 kHz)
f
T
100
C
obo
−
h
fe
40
NF
−
8.0
200
dB
6.0
−
300
pF
MHz
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2
MMBT5401LT1
200
150
T
J
= 125°C
h FE, CURRENT GAIN
100
70
50
−55
°C
30
20
V
CE
= − 1.0 V
V
CE
= − 5.0 V
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
I
C
, COLLECTOR CURRENT (mA)
10
20
30
50
100
25°C
Figure 1. DC Current Gain
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1.0
I
B
, BASE CURRENT (mA)
2.0
5.0
10
20
50
I
C
= 1.0 mA
10 mA
30 mA
100 mA
Figure 2. Collector Saturation Region
10
3
IC, COLLECTOR CURRENT (
µ
A)
10
2
10
1
T
J
= 125°C
10
0
10
−1
10
−2
10
−3
0.3
75°C
REVERSE
25°C
FORWARD
V
CE
= 30 V
I
C
= I
CES
0.2
0.1
0
0.1 0.2 0.3 0.4
0.5
V
BE
, BASE−EMITTER VOLTAGE (VOLTS)
0.6
0.7
Figure 3. Collector Cut−Off Region
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3
MMBT5401LT1
θ
V, TEMPERATURE COEFFICIENT (mV/
°
C)
1.0
0.9
0.8
V, VOLTAGE (VOLTS)
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.1
0.2 0.3 0.5
1.0 2.0 3.0 5.0
10
20 30
I
C
, COLLECTOR CURRENT (mA)
50
100
V
CE(sat)
@ I
C
/I
B
= 10
V
BE(sat)
@ I
C
/I
B
= 10
T
J
= 25°C
2.5
2.0
1.5
1.0
0.5
0
−0.5
−1.0
−1.5
−2.0
−2.5
0.1
q
VB
for V
BE(sat)
0.2 0.3 0.5 1.0 2.0 3.0 5.0
10
20 30
I
C
, COLLECTOR CURRENT (mA)
50
100
q
VC
for V
CE(sat)
T
J
= − 55°C to 135°C
Figure 4. “On” Voltages
Figure 5. Temperature Coefficients
10.2 V
V
in
10
ms
INPUT PULSE
t
r
, t
f
≤
10 ns
DUTY CYCLE = 1.0%
0.25
mF
100
R
B
5.1 k
V
in
100
1N914
3.0 k
R
C
V
out
C, CAPACITANCE (pF)
V
BB
+8.8 V
V
CC
−30 V
100
70
50
30
20
10
7.0
5.0
3.0
2.0
1.0
0.2
0.3
2.0 3.0
5.0 7.0
0.5 0.7 1.0
V
R
, REVERSE VOLTAGE (VOLTS)
C
ibo
T
J
= 25°C
C
obo
Values Shown are for I
C
@ 10 mA
10
20
Figure 6. Switching Time Test Circuit
Figure 7. Capacitances
1000
700
500
300
t, TIME (ns)
200
100
70
50
30
20
2000
I
C
/I
B
= 10
T
J
= 25°C
t
r
@ V
CC
= 120 V
t
r
@ V
CC
= 30 V
t, TIME (ns)
1000
700
500
300
200
100
70
50
30
50
100
200
20
0.2 0.3 0.5
1.0
2.0 3.0 5.0
10
20 30
50
100
200
I
C
/I
B
= 10
T
J
= 25°C
t
f
@ V
CC
= 30 V
t
s
@ V
CC
= 120 V
t
f
@ V
CC
= 120 V
t
d
@ V
BE(off)
= 1.0 V
V
CC
= 120 V
1.0
2.0 3.0 5.0
10
20 30
10
0.2 0.3 0.5
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 8. Turn−On Time
Figure 9. Turn−Off Time
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