REVISIONS
REVISION
DESCRIPTION
APPROVED
DATE
-
Initial release
Luis Vargas
5/28/2008
GENERAL RELEASE DOCUMENT
CONSULT FACTORY FOR CURRENT REVISION
50MHz TCXO ,Vcc=12v,+25ºC
9/17/08
-30
-40
-50
-60
-70
-80
L(f), dBc
-90
-100
-110
-120
-130
-140
-150
-160
-170
-180
1
10
100
1000
10000
100000
Frequency Offset, HZ
Example 1 of Temperature Stability
2.0
1.5
Example 2 of Temperature Stability
1.0
freq error, PPM
0.5
0.0
-0.5
-1.0
-1.5
-2.0
-50 -45 -40 -35 -30 -25 -20 -15 -10
-5
0
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
temp, deg C
UNLESS OTHERWISE
SPECIFIED, DIMENSIONS
ARE IN INCHES.
SPECIFICATION CONTROL DRAWING
DATE
PREPARED BY:
Luis Vargas
6/5/08
Q-TECH CORPORATION
10150 W. JEFFERSON BLVD.
CULVER CITY, CA 90232-3510
LOW PROFILE 24 PIN DDIP HYBRID CRYSTAL
OSCILLATOR, TCXO, CLASS S,
Standard Design For Sine Wave up to 150MHz
DRAWING NO.:
REVISION
TOLERANCES:
3 PLACE DECIMAL = .005
2 PLACE DECIMAL = .02
1 PLACE DECIMAL = .1
FRACTIONS = ± 1/16
ANGLES = 2 DEGREES
CHECKED BY:
QUALITY
DATE
QT800 DDIP Sine-Wave
RELEASED BY:
DOCUMENT CONTROL
-
APPROVED BY:
ENGINEERING
DATE
SCALE
SIZE
CAGE
CODE
NONE
A
51774
SHEET 1 OF 7
1.0
SCOPE
This specification establishes the detail requirements for low profile hybrid, hermetically sealed, Sine-
Wave output temperature compensated crystal oscillators (TCXO) for use in space flight missions.
2.0
APPLICABLE DOCUMENTS
The following documents of the latest issue form a part of this drawing to the extent specified herein.
2.1
Specifications and Standards
SPECIFICATIONS
MILITARY
MIL-S-19500
Semiconductor Devices, General Specification For
MIL-PRF-55310 Crystal Oscillators, General Specification For
MIL-PRF-38535 Integrated Circuits, (Microcircuits) Manufacturing, General Specification For
MIL-PRF-38534 Hybrid Microcircuits, General Specification For
STANDARDS
MILITARY
MIL-STD-202
MIL-STD-883
MIL-STD-1686
Test Methods for Electronic and Electrical Component Parts
Test Methods and Procedures for Microelectronics
Electrostatic Discharge Control Program for Protection of Electrical and
Electronics Parts, Assemblies and Equipment.
2.2
Conflicting requirements
In the event of conflict between requirements of this specification and other requirements of the
applicable detail drawing, the precedence in which requirements shall govern, in descending order, is
as follows:
a) Applicable Customer purchase order.
b) Applicable detail drawing.
c) This specification.
d)
Other specifications or standards referenced in 2.1 herein.
2.3
Customer Purchase Order Special Requirements
Additional special requirements shall be specified in the applicable Customer purchase order when
additional requirements or modifications specified herein are needed for compliance to special
program or product line requirements.
3.0
3.1
PERFORMANCE REQUIREMENTS
General Definition
The TCXO is a high reliability signal generator that provides a sine-wave output. The TCXO has been
designed to operate in a spaceflight environment with an expected lifetime in excess of 15 years.
Lifetime is defined as the sum of operational and storage environments.
SIZE
CAGE NO.
Q-TECH Corporation
10150 W. Jefferson Blvd.
Culver City, CA 90232
QT800 DDIP Sine-Wave
Sheet
2
of 7
REV.
A
51774
-
3.1.1
Electrical Characteristics
SYMBOL
fo
-
Vs
Vs±5%
CONDITIONS
VALUE
See part number
generation table
See part number
generation table
PARAMETER
Frequency Nom.
Supply voltage, Nom.
Input Current, max.
Freq. stability vs.
temperature
(including ±5% Load
Change and ±5% Input
Voltage change)
Electrical Frequency
Adjustment Min.
(when specified)
UNIT
MHz
V
mA
ppm
Is
Vs, nom. / Ta=+25°C
f/fc (Ta) Ta=-20°C…+70°C (option 1)
Ta=-40°C…+85°C (option 2)
30
±1.0
±2.0
50
Contact factory for other options
available
See part number
generation table
f/fo
( Vcc)
Aging Max
Freq. stability vs. Vacuum
Short term stability
RF Output
f/fo
f/fo
f/fc( t)
±5 PPM Two options:
1) via an external select-at-test
resistor connected from Pin 1
to Ground
2) Via External tuning voltage
over 10 year (first year 1 ppm)
Met by design, not tested
t=1sec. (Allan variance)
Contact factory for other options
available
See part number
generation table
±5.0
ppm
±5.0
±0.2
0.001
75.1 to
30 to
150
75
3
rd
X
3rd
See part number
generation table
ppm
ppm
ppm
MHz
Output level Min.
Harmonics Max.
Sub-harmonics Max.
Phase noise @ freq. offset
Sine Class S, 100 krads (Si) total
dose Min
dBm
dBc
dBc
dBc/Hz
dBc/Hz
dBc/Hz
dBc/Hz
dBc/Hz
£
£
£
£
£
(
(
(
(
(
f)
f)
f)
f)
f)
Spurious
f=10Hz
f=100Hz
f=1kHz
f=10kHz
f=100kHz
Under static conditions. Met by
design, not tested.
-20
N/A
-80
-110
-135
-145
-145
-70
-20
-20
Contact
factory
for
options
available
dBc
3.2
Absolute Maximum Rating
Supply Voltage
DC Input Current
Storage Temperature range
Lead Temperature (Soldering, 10 seconds)
0 to +16.5 VDC
50 mA maximum
-62°C to +125°C
300°C
3.2.1
Physical Characteristics
3.2.1.1 Dimensions - The TCXO outline dimensions and terminal connections shall be as shown in Figure 1
herein.
3.2.1.2 Weight - The TCXO shall weigh less than or equal to 25 grams.
3.2.1.3 Materials - The TCXO package body and lead finish shall be gold in accordance with MIL-PRF-38534.
SIZE
CAGE NO.
Q-TECH Corporation
10150 W. Jefferson Blvd.
Culver City, CA 90232
QT800 DDIP Sine-Wave
Sheet
3
of 7
REV.
A
51774
-
3.2.2
Environmental Conditions
MIL-STD-202, Method 204, TC “D”
MIL-STD-202, Method 214 TC “I-K” (15 minutes per axis)
MIL-STD-202, Method 213, TC “F”
MIL-STD-883, Method 2001, TC “A”
50,000 feet minimum to deep space
Radiation testing is not performed, but these TCXOs have been acceptable for
use in environments up to 100K rads by analysis of the components used. Only
bipolar semiconductors are employed. A copy of the parts list and materials
can be provided for review.
The electronics used in the TCXO shall be single event latchup free.
The TCXO supplied to this drawing shall be considered to be electrostatic
discharge sensitive and require further protection and shall use one of the
packaging requirements in accordance with MIL-PRF-38534, Category A,
Section 5.3.2.4 Transportability.
The TCXO shall be capable of being transported by air, ship or road when
packaged in a suitable container.
Sine Vibration
Random Vibration
Shock
Acceleration
Altitude
Radiation
Electrostatic Discharge Sensitivity
3.3
Design and Construction
The design and construction of the crystal oscillator shall be as specified herein. As a minimum, the
oscillators shall meet the design and construction requirements of MIL-PRF-55310, except element
evaluation shall be as specified in 3.3.1.
Operation
Design, Construction &
Component Screen (see 3.3.2)
Workmanship
Screening
Non-Destruct Wire Bond Pull
Internal Visual
MIL-PRF-55310 Class S
M883, Method 2017 for Class S
MIL-PRF-55310 Class S
100%, M883, Method 2023 (2.4 grams)
MIL-STD-883, methods 2017 & 2032 condition K (class S). During the time
interval between final internal visual inspection and preparation for sealing,
hybrid crystal oscillators shall be stored in a dry, controlled environment as
defined in MIL-STD-883, method 2017 or in a vacuum bake oven.
48 hrs minimum @ +150 C M883, Method 1008 TC B
M883, Method 1011, TC A
M883, Method 1010, TC B
M883, Method 2001, TC A (5000 gs, Y1 Axis only)
100% Method 1014, (TC A1 for fine leak and TC C for gross leak)
M883, Method 2020, TC B
Frequency, Output levels, Input Current@ +25 C
+125 C for 240 hours
Frequency, Output levels, Input Current
@ +25°C & Temp Extremes listed on the Electrical Specification
M883, Method 2012 class S
100%
100%
883 Method 2009
Stabilization Bake
Thermal Shock
Temperature Cycling
Constant Acceleration
Seal Test (fine & gross)
PIND
Electrical Test
Burn-In (Powered with load)
Electrical Test
Radiographic
Group A
Group B (30 day Aging @ +70 C)
External visual
SIZE
CAGE NO.
Q-TECH Corporation
10150 W. Jefferson Blvd.
Culver City, CA 90232
QT800 DDIP Sine-Wave
Sheet
4
of 7
REV.
A
51774
-
3.3.1
All piece parts shall be derived from lots that meet the element evaluation requirements of MIL-PRF-
38534, Class K, with the exception of the following exceptions:
Active elements
a) Visual inspection of silicon on sapphire microcircuits. Semicircular crack(s) or multiple adjacent
cracks, not in the active area, starting and terminating at the edge of the die are acceptable.
Attached (chip in place) sapphire is nonconductive material and shall not be considered as foreign
material and will be considered as nonconductive material for all inspection criteria.
b) Subgroup 4, Scanning Electron Microscope (SEM) inspection. The manufacturer may allow the die
distributor, at his option, to select two (2) dice from a waffle pack (containing a maximum quantity
of 100 die), visually inspect for the worst case metallization of the 2 dice, and take SEM photographs
of the worst case.
c) Subgroup 5 radiation tests. Subgroup 5 radiation tests are not required unless otherwise specified
in the detail purchase order.
3.3.2
Processes - Processes used for manufacturing the TCXO are selected on the basis of their ability to
meet the quality requirements for space High Reliability manufacturing. Travelers or Process Cards are
used in the manufacturing and testing of all of the TCXO Series, and might be available for customer
review. Copies of these Travelers can be provided with the TCXOs at time of shipment if so specified
on the purchase order.
Interchangeability - Each TCXO shall be interchangeable without using a special selection process.
Product Marking - Each unit shall be permanently marked with the manufacturer's name or symbol,
part number, lot date code number, and serial number. The unit shall be marked with the outline of an
equilateral triangle near pin 1 to show that it contains devices which are sensitive to electrostatic
discharge.
Parts Program
Devices delivered to this specification represent the standardized Parts, Materials and Processes (PMP)
Program developed, implemented and certified for advanced applications and extended environments.
3.3.3
3.3.4
3.4
3.4.1
Quartz Crystal Resonator - The crystal resonator used shall be constructed using a 4 point mount
premium synthetic swept Quartz and procured to Q-TECH SCD.
(For
the Engineering models, non-
swept quartz may be used).
Traceability Requirements
Material, element and process traceability requirements shall be as specified by MIL-PRF-38534 for
Class K hybrids.
3.5
3.6
Data
3.6.1. Design Documentation - When required by the purchase order, design, topography, process and flow
charts for all assembly/inspection and test operation for devices to be supplied under this specification
on the initial procurement shall be established and shall be available in-plant for review by the procuring
activity upon request. This design documentation shall be sufficient to depict the physical and electrical
construction of the devices supplied under the specification and shall be traceable to the specific parts,
drawings or part type numbers to which it applies, and to the production lot(s) and inspection lot codes
under which devices are manufactured and tested so that revisions can be identified.
SIZE
CAGE NO.
Q-TECH Corporation
10150 W. Jefferson Blvd.
Culver City, CA 90232
QT800 DDIP Sine-Wave
Sheet
5
of 7
REV.
A
51774
-
传感器
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
