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GS88132BGT-250V: 产品描述Cache SRAM, 256KX36, 5.5ns, CMOS, PQFP100, ROHS COMPLIANT, TQFP-100; 产品类别存储存储; 文件大小1MB，共36页; 制造商GSI Technology; 官网地址http://www.gsitechnology.com/; 标准

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GS88132BGT-250V概述

Cache SRAM, 256KX36, 5.5ns, CMOS, PQFP100, ROHS COMPLIANT, TQFP-100

GS88132BGT-250V规格参数

参数名称	属性值
是否Rohs认证	符合
厂商名称	GSI Technology
零件包装代码	QFP
包装说明	LQFP,
针数	100
Reach Compliance Code	unknown
ECCN代码	3A991.B.2.B
最长访问时间	5.5 ns
其他特性	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY
JESD-30 代码	R-PQFP-G100
JESD-609代码	e3
长度	20 mm
内存密度	9437184 bit
内存集成电路类型	CACHE SRAM
内存宽度	36
湿度敏感等级	3
功能数量	1
端子数量	100
字数	262144 words
字数代码	256000
工作模式	SYNCHRONOUS
最高工作温度	70 °C
最低工作温度
组织	256KX36
封装主体材料	PLASTIC/EPOXY
封装代码	LQFP
封装形状	RECTANGULAR
封装形式	FLATPACK, LOW PROFILE
并行/串行	PARALLEL
峰值回流温度（摄氏度）	260
认证状态	Not Qualified
座面最大高度	1.6 mm
最大供电电压 (Vsup)	2 V
最小供电电压 (Vsup)	1.7 V
标称供电电压 (Vsup)	1.8 V
表面贴装	YES
技术	CMOS
温度等级	COMMERCIAL
端子面层	Matte Tin (Sn)
端子形式	GULL WING
端子节距	0.65 mm
端子位置	QUAD
处于峰值回流温度下的最长时间	NOT SPECIFIED
宽度	14 mm

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GS88118/32/36B(T/D)-xxxV

100-pin TQFP & 165-bump BGA

Commercial Temp

Industrial Temp

Features

• IEEE 1149.1 JTAG-compatible Boundary Scan

• 1.8 V or 2.5 V +10%/–10% core power supply

• 1.8 V or 2.5 V I/O supply

• LBO pin for Linear or Interleaved Burst mode

• Internal input resistors on mode pins allow floating mode pins

• Byte Write (BW) and/or Global Write (GW) operation

• Internal self-timed write cycle

• Automatic power-down for portable applications

• JEDEC-standard 100-lead TQFP and 165-bump BGA

packages

• RoHS-compliant 100-lead TQFP and 165-bump BGA

packages available

512K x 18, 256K x 32, 256K x 36

9Mb Sync Burst SRAMs

250 MHz–150 MHz

1.8 V or 2.5 V V

1.8 V or 2.5 V I/O

Flow Through/Pipeline Reads

The function of the Data Output register can be controlled by

the user via the FT mode pin (Pin 14). Holding the FT mode

pin low places the RAM in Flow Through mode, causing

output data to bypass the Data Output Register. Holding FT

high places the RAM in Pipeline mode, activating the rising-

edge-triggered Data Output Register.

SCD Pipelined Reads

The GS88118/32/36B(T/D)-xxxV is a SCD (Single Cycle

Deselect) pipelined synchronous SRAM. DCD (Dual Cycle

Deselect) versions are also available. SCD SRAMs pipeline

deselect commands one stage less than read commands. SCD

RAMs begin turning off their outputs immediately after the

deselect command has been captured in the input registers.

Byte Write and Global Write

Byte write operation is performed by using Byte Write enable

(BW) input combined with one or more individual byte write

signals (Bx). In addition, Global Write (GW) is available for

writing all bytes at one time, regardless of the Byte Write

control inputs.

Sleep Mode

Low power (Sleep mode) is attained through the assertion

(High) of the ZZ signal, or by stopping the clock (CK).

Memory data is retained during Sleep mode.

Core and Interface Voltages

The GS88118/32/36B(T/D)-xxxV operates on a 1.8 V or 2.5 V

power supply. All input are 1.8 V and 2.5 V compatible.

Separate output power (V

DDQ

) pins are used to decouple

output noise from the internal circuits and are 1.8 V and 2.5 V

compatible.

Functional Description

Applications

The GS88118/32/36B(T/D)-xxxV is a 9,437,184-bit high

performance synchronous SRAM with a 2-bit burst address

counter. Although of a type originally developed for Level 2

Cache applications supporting high performance CPUs, the

device now finds application in synchronous SRAM

applications, ranging from DSP main store to networking chip

set support.

Controls

Addresses, data I/Os, chip enable (E1, E2), address burst

control inputs (ADSP, ADSC, ADV) and write control inputs

(Bx, BW, GW) are synchronous and are controlled by a

positive-edge-triggered clock input (CK). Output enable (G)

and power down control (ZZ) are asynchronous inputs. Burst

cycles can be initiated with either ADSP or ADSC inputs. In

Burst mode, subsequent burst addresses are generated

internally and are controlled by ADV. The burst address

counter may be configured to count in either linear or

interleave order with the Linear Burst Order (LBO) input. The

Burst function need not be used. New addresses can be loaded

on every cycle with no degradation of chip performance.

Paramter Synopsis

-250

-200

3.0

5.0

170

195

6.5

140

160

-150

3.8

6.7

140

160

7.5

128

145

Unit

Pipeline

3-1-1-1

tCycle

Curr (x18)

Curr (x32/x36)

tCycle

Curr (x18)

Curr (x32/x36)

3.0

4.0

200

230

5.5

160

185

Flow Through

2-1-1-1

Rev: 1.00 6/2006

1/36

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS88132BGT-250V相似产品对比

	GS88132BGT-250V	GS88132BT-250V	GS88132BT-250VT	GS88132BGT-250IVT	GS88132BGT-250IV	GS88132BGT-250VT	GS88132BT-250IVT	GS88132BT-250IV
描述	Cache SRAM, 256KX36, 5.5ns, CMOS, PQFP100, ROHS COMPLIANT, TQFP-100	Cache SRAM, 256KX36, 5.5ns, CMOS, PQFP100, TQFP-100	Cache SRAM, 256KX36, 5.5ns, CMOS, PQFP100, TQFP-100	Cache SRAM, 256KX36, 5.5ns, CMOS, PQFP100, ROHS COMPLIANT, TQFP-100	Cache SRAM, 256KX36, 5.5ns, CMOS, PQFP100, ROHS COMPLIANT, TQFP-100	Cache SRAM, 256KX36, 5.5ns, CMOS, PQFP100, ROHS COMPLIANT, TQFP-100	Cache SRAM, 256KX36, 5.5ns, CMOS, PQFP100, TQFP-100	Cache SRAM, 256KX36, 5.5ns, CMOS, PQFP100, TQFP-100
是否Rohs认证	符合	不符合	不符合	符合	符合	符合	不符合	不符合
零件包装代码	QFP	QFP	QFP	QFP	QFP	QFP	QFP	QFP
包装说明	LQFP,	LQFP,	LQFP,	LQFP,	LQFP,	LQFP,	LQFP,	LQFP,
针数	100	100	100	100	100	100	100	100
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN代码	3A991.B.2.B	3A991.B.2.B	3A991.B.2.B	3A991.B.2.B	3A991.B.2.B	3A991.B.2.B	3A991.B.2.B	3A991.B.2.B
最长访问时间	5.5 ns	5.5 ns	5.5 ns	5.5 ns	5.5 ns	5.5 ns	5.5 ns	5.5 ns
其他特性	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY
JESD-30 代码	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100
长度	20 mm	20 mm	20 mm	20 mm	20 mm	20 mm	20 mm	20 mm
内存密度	9437184 bit	9437184 bit	9437184 bit	9437184 bit	9437184 bit	9437184 bit	9437184 bit	9437184 bit
内存集成电路类型	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM
内存宽度	36	36	36	36	36	36	36	36
功能数量	1	1	1	1	1	1	1	1
端子数量	100	100	100	100	100	100	100	100
字数	262144 words	262144 words	262144 words	262144 words	262144 words	262144 words	262144 words	262144 words
字数代码	256000	256000	256000	256000	256000	256000	256000	256000
工作模式	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
最高工作温度	70 °C	70 °C	70 °C	85 °C	85 °C	70 °C	85 °C	85 °C
组织	256KX36	256KX36	256KX36	256KX36	256KX36	256KX36	256KX36	256KX36
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	LQFP	LQFP	LQFP	LQFP	LQFP	LQFP	LQFP	LQFP
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
峰值回流温度（摄氏度）	260	NOT SPECIFIED	NOT SPECIFIED	260	260	260	NOT SPECIFIED	NOT SPECIFIED
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	1.6 mm	1.6 mm	1.6 mm	1.6 mm	1.6 mm	1.6 mm	1.6 mm	1.6 mm
最大供电电压 (Vsup)	2 V	2 V	2 V	2 V	2 V	2 V	2 V	2 V
最小供电电压 (Vsup)	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V
标称供电电压 (Vsup)	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	COMMERCIAL	COMMERCIAL	COMMERCIAL	INDUSTRIAL	INDUSTRIAL	COMMERCIAL	INDUSTRIAL	INDUSTRIAL
端子形式	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
端子节距	0.65 mm	0.65 mm	0.65 mm	0.65 mm	0.65 mm	0.65 mm	0.65 mm	0.65 mm
端子位置	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
宽度	14 mm	14 mm	14 mm	14 mm	14 mm	14 mm	14 mm	14 mm
厂商名称	GSI Technology	-	-	GSI Technology	GSI Technology	GSI Technology	GSI Technology	GSI Technology

GS88132BGT-250V

GS88132BGT-250V概述

GS88132BGT-250V规格参数

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