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this document by MRFIC0919/D
MRFIC0919
Power Amplifier
The MRFIC0919 is a single supply, RF power amplifier designed for the
2.0 W GSM900 handheld radio. The negative power supply is generated
inside the chip using RF rectification, which avoids any spurious signal. A
built in priority switch is provided to prevent Drain Voltage being applied on
the RF lineup if not properly biased by the Negative Voltage. The device is
packaged in the TSSOP–16EP package, with exposed backside pad, which
allows excellent electrical and thermal performance through a solderable
contact.
•
Target 3.6 V Characteristics:
RF Input Power: 3.0 dBm
RF Output Power: 35.3 dBm Typical
Efficiency: 53% Typical
•
Single Positive Supply Solution
GSM 880 – 915 MHz
INTEGRATED
POWER AMPLIFIER
SEMICONDUCTOR
TECHNICAL DATA
•
•
•
Negative Voltage Generator
Positive Step–up Voltage Generator
VSS Check Switch for Gate–Drain Priority
16
1
PLASTIC PACKAGE
CASE 948L
(TSSOP–16EP, Tape and Reel Only)
PIN CONNECTIONS
VP
1
2
3
4
5
6
7
8
(Top View)
16
15
14
13
12
11
10
9
VDB
Gnd
RF In
VD1
Gnd
VD2
VSC
VSS
Simplified Block Diagram
VD3
RF Out
RF Out
VD1
VD2
VD3
RF Out
Bias3
RF In
RF Out
Bias2
Bias1
Bias1
Bias2
Bias3
VSS
VP
VSC
VDB
Negative
Voltage Generator
ORDERING INFORMATION
Device
Operating
Temp Range
TA = –40 to 85°C
Package
TSSOP–16EP
This device contains 8 active transistors.
MRFIC0919R2
©
Motorola, Inc. 2000
Rev 3
MOTOROLA WIRELESS SEMICONDUCTOR
Information On This Product,
For More
SOLUTIONS – RF AND IF DEVICE DATA
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1
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DEVICE ON LIFETIME BUY
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MRFIC0919
MAXIMUM RATINGS
Rating
Supply Voltage
RF Input Power
RF Output Power
Operating Case Temperature Range
Storage Temperature Range
Symbol
VD1, 2, 3
Pin
Pout
TC
Tstg
Value
6.0
12
38
–40 to 85
–55 to 150
Unit
dBm
dBm
°C
°C
NOTES:
1. Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the limits in the Recommended Operating
Contitions or Electrical Characteristics tables.
2. ESD (electrostatic discharge) immunity meets Human Body Model (HBM)
≤250
V and
Machine Model (MM)
≤60
V. This device is rated Moisture Sensitivity Level (MSL) 4.
Additional ESD data available upon request.
RECOMMENDED OPERATING CONDITIONS
Characteristic
Supply Voltage
Input Power
Symbol
VDB,
VD1, 2, 3
Pin
Min
–
–
Typ
3.0 to 5.5
3.0 to 8.0
Max
–
–
Unit
Vdc
dBm
ELECTRICAL CHARACTERISTICS
(VDB = 3.6 V, VD1, 2, 3 = 3.6 V, Pin = 3.0 dBm, Peak measurement at 12.5% duty
cycle, 4.6 ms Period, TA = 25°C, unless otherwise noted.)
Characteristic
Frequency Range
Output Power
Power Added Efficiency
Output Power at Low Voltage (VD1, 2, 3 = 3.0 V)
Harmonic Output
2fo
≥3f
o
Input Return Loss
Output Power Isolation (Pin = 8.0 dBm, VDB = 3.0 V, VD1, 2&3 = 0 V)
Noise Power in Rx band 925 to 960 MHz (100 kHz measurement
bandwidth)
Negative Voltage (Pin = 3.0 dBm, VDB = 3.0 V, VD1, 2&3 = 0 V)
Negative Voltage Setting Time (Pin = 3.0 dBm, VDB stepped
from 0 to 3.0 V)
Stability–Spurious Output (Pout = 5.0 to 35 dBm, Load VSWR 6:1 all
phase angles, source VSWR = 3:1, at any phase angle,
Adjust VD1, 2&3 for specified power)
Load Mismatch Stress (Pout = 5.0 to 35 dBm, Load VSWR = 10:1
all phase angles, 5 seconds, Adjust VD1, 2&3 for specified power)
Positive Voltage (Pin = 3.0 dBm, VDB = 3.0 V)
VP
Symbol
BW
Pout
PAE
Pout
–
–
|S11|
Poff
NP
Vss
Ts
Pspur
Min
880
34.5
45
33
–
–
–
–
–
–4.85
–
–
Typ
–
35.3
53
33.7
40
45
12
–32
–90
–
0.7
–
Max
915
–
–
–
35
40
–
–
–
–
–
–60
dB
dBm
dBm
V
µs
dBc
Unit
MHz
dBm
%
dBm
dBc
No Degradation in Output Power
Before & After Test
6.0
–
–
V
2
MOTOROLA
For More Information On This Product,
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SOLUTIONS – RF AND IF DEVICE DATA
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MRFIC0919
Table 1. Optimum Loads Derived from
Circuit Characterization
Zin
OHMS
R
9.83
9.88
9.83
9.82
9.82
9.79
9.78
9.75
jX
–75.84
–76.75
–77.65
–78.60
–79.50
–80.35
–81.23
–82.18
R
1.79
1.78
1.76
1.75
1.74
1.73
1.71
1.70
ZOL*
OHMS
jX
2.34
2.46
2.57
2.67
2.80
2.90
3.00
3.13
f
MHz
880
885
890
895
900
905
910
915
Zin represents the input impedance of the device.
ZOL* represents the conjugate of the optimum output load to present
to the device.
Figure 1. Reference Circuit
VSS
D1
C5
VDB
VP
VD1, 2 and 3
R1
R2
C2
C3
9
10
C1
T1
T2
50
Ω
In
GSM
C12
L2
C4
L1
11
12
13
14
15
16
C6
R3
8
7
6
5
4
3
2
1
C8
T4
T3
C9
C10
Note:
Use highQ
cap for C9 and C10
for best PAE/Pout
C11
T5
50
Ω
Out
GSM
MRFIC0919
TSSOP16EP
C7
C1, C3, C4, C7, C11
C2, C6
C5
C8
C9
C10
C12
L1
L2
D1
56 pF
10 nF
330 pF
4.7 pF
12 pF
6.8 pF
8.2 pF
12 nH
6.8 nH
Zener 5.1 V
AVX Accu–F
AVX Accu–F
R1, R2
R3
T1
T2
T3
T4
T5
12 k
6.8 k
60
Ω
Microstrip Line, L = 3.0 mm
60
Ω
Microstrip Line, L = 11 mm
50
Ω
Microstrip Line, L = 17 mm
30
Ω
Microstrip Line, L = 1.0 mm
30
Ω
Microstrip Line, L = 7.0 mm
MMSZ4689T1
MOTOROLA WIRELESS SEMICONDUCTOR
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SOLUTIONS – RF AND IF DEVICE DATA
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MRFIC0919
Figure 2. 3.6 V GSM IPA MRFIC0919 Application Circuit
0V
TxEn
12
BS
8
0V
GSM
3.0 V
DCS
CE
7
Vbat
11
Vramp
1
0V
MC33170
Pin 1
5
C5
10
µF
A
B
6
R11
10 k
2.0 V
MTSF3N02HD
G
R2 10 k
R5 0
A1
(Micro 8)
D
DEVICE ON LIFETIME BUY
U1
3
S
Pin 1
C39
0.1
µF
C1
100 nF
R1
10 k
2
4
10
VD1
2
VD2
4
VSS
5
VDB
6
VP
3
VD3
10
A
8
Gnd
9
C21
330 pF
R13B 12 k
R13C 12 k
R13A 6.8 k
Note:
Use highQ cap
for C14 and C15 for
best PAE/Pout
C15
6.8 pF
C7
10 nF
C6
56 pF
Zc = 60
Ω
L = 3.0 mm
Zc = 60
Ω
L = 11 mm
50
Ω
In
GSM
C20
8.2 pF
L2
12 nH
L4
6.8 nH
C11
56 pF
9
10
11
12
13
14
15
16
C8
10 nF
8
7
6
5
4
3
2
1
56 pF
C14
12 pF
MRFIC0919
TSSOP16EP
C16
56 pF
Zc = 30
Ω
L = 1.0 mm
Zc = 30
Ω
L = 7.0 mm
C17
56 pF
50
Ω
Out
GSM
C12
4.7 pF
Zc = 50
Ω
L = 17 mm
Note:
I/O labels and pin numbers refer to demoboard connector pin out.
4
MOTOROLA
For More Information On This Product,
WIRELESS SEMICONDUCTOR
SOLUTIONS – RF AND IF DEVICE DATA
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LAST ORDER 04JUL02 LAST SHIP 04JAN02
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MRFIC0919
Figure 3. 3.6 V GSM & DCS IPA Dual–Band Application Circuit with Companion Chip & NMOS Switch
0V
TxEn
12
BS
8
0V
GSM
3.0 V
DCS
CE
7
Vbat
11
Vramp
1
0V
2.0 V
MC33170
Pin 1
5
A
C5
10
µF
R11
10 k
S
Pin 1
R5 0
C39
0.1
µF
MTSF3N02HD
G
R2 10 k
A1
(Micro 8)
D
DEVICE ON LIFETIME BUY
B
6
U1
3
C1
100 nF
R1
10 k
2
4
10
VD1
2
VD2
4
VSS
5
VDB
6
C29
330 pF
VP
3
VD3
10
R13B 12 k
A
8
Gnd
9
C7
10 nF
C6
56 pF
9
Zc = 60
Ω
L = 3.0 mm
Zc = 60
Ω
L = 11 mm
10
11
12
13
14
C40
8.2 pF
L2
12 nH
15
16
L4
6.8 nH
C8
10 nF
R13C 12 k
R13A 6.8 k
8
7
6
5
C14
12 pF
C15
6.8 pF
C16
56 pF
Zc = 30
Ω
L = 7.0 mm
Zc = 50
Ω
L = 17 mm
C12
4.7 pF
Zc = 50
Ω
50
Ω
Out GSM
C4
56 pF
MRFIC0919
TSSOP16EP
4
3
2
1
50
Ω
In GSM
Zc = 50
C17
56 pF
C8
10 nF
C25 10 nF
C11
56 pF
B
C34 47 pF
C35 22 pF
8
C41
47 nF
9
8
7
6
C31 3.9 pF
C32 1.0 pF
C9 22 pF
4
3
2
1
Zc = 50
Ω
L = 17 mm
C22
2.7 pF
C33
22 pF
Zc = 30
Ω
L = 1.0 mm
Zc = 30
Ω
L = 1.0 mm
50
Ω
Out DCS
R13A 15 kΩ
R13B 15 kΩ
R13C 7.5 kΩ
10
Zc = 60
Ω
L = 3.0 mm 11
Zc = 60
Ω
L = 3.0 mm 12
C42
22 pF
C36 22 pF
50
Ω
ID DCS
L10
1.8 nH
Zc = 50
Ω
L = 4.5 mm
R10
680
Ω
Zc = 50
Ω
L = 2.5 mm
C37
MRFIC1819
TSSOP16EP
5
13
0.8 pF14
15
C24
22 pF
Zc = 80
Ω
L = 4.0 mm
16
L3
2.7 nH
L8 33 nH
C10
330 pF
C26
47 pF
C30
10 nF
MOTOROLA WIRELESS SEMICONDUCTOR
Information On This Product,
For More
SOLUTIONS – RF AND IF DEVICE DATA
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