BFG235
NPN Silicon RF Transistor*
•
For low-distortion broadband output amplifier
stages in antenna and telecommunication
systems up to 2 GHz at collector currents from
120 mA to 250 mA
•
Power amplifiers for DECT and PCN systems
•
Integrated emitter ballast resistor
•
f
T
= 5.5 GHz
•
Pb-free (RoHS compliant) package
1)
•
Qualified according AEC Q101
* Short term description
4
2
1
3
ESD
(Electrostatic
discharge)
sensitive device, observe handling precaution!
Type
BFG235
Maximum Ratings
Parameter
Marking
Pin Configuration
BFG235 1 = E 2 = B 3 = E 4 = C -
Symbol
V
CEO
V
CES
V
CBO
V
EBO
I
C
I
B
P
tot
T
j
T
A
T
stg
Package
-
SOT223
Value
15
25
25
2
300
40
2
150
-65 ... 150
-65 ... 150
W
°C
mA
Unit
V
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
2)
T
S
≤
80°C
Junction temperature
Ambient temperature
Storage temperature
1
Pb-containing
2
T
package may be available upon special request
S is measured on the collector lead at the soldering point to the pcb
2007-04-20
1
BFG235
Thermal Resistance
Parameter
Junction - soldering point
1)
Symbol
R
thJS
Value
≤
35
Unit
K/W
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Parameter
min.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
Collector-emitter cutoff current
V
CE
= 25 V,
V
BE
= 0
Collector-base cutoff current
V
CB
= 10 V,
I
E
= 0
Emitter-base cutoff current
V
EB
= 1 V,
I
C
= 0
DC current gain-
I
C
= 200 mA,
V
CE
= 8 V, pulse measured
1
For
Unit
max.
-
200
100
2
160
V
µA
nA
µA
-
typ.
-
-
-
-
120
V
(BR)CEO
I
CES
I
CBO
I
EBO
h
FE
15
-
-
-
75
calculation of
R
thJA
please refer to Application Note Thermal Resistance
2007-04-20
2
BFG235
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Unit
Parameter
min.
typ. max.
AC Characteristics
(verified by random sampling)
Transition frequency
f
T
I
C
= 200 mA,
V
CE
= 8 V,
f
= 200 MHz
Collector-base capacitance
V
CB
= 10 V,
f
= 1 MHz,
V
BE
= 0 ,
emitter grounded
Collector emitter capacitance
V
CE
= 10 V,
f
= 1 MHz,
V
BE
= 0 ,
base grounded
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1 MHz,
V
CB
= 0 ,
collector grounded
Noise figure
I
C
= 60 mA,
V
CE
= 8 V,
Z
S
=
Z
Sopt
,
f
= 900 MHz
Power gain, maximum available
1)
I
C
= 200 mA,
V
CE
= 8 V,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
f
= 900 MHz
Transducer gain
I
C
= 200 mA,
V
CE
= 8 V,
Z
S
=
Z
L
= 50
Ω
,
f
= 900 MHz
Third order intercept point at output
V
CE
= 8 V,
I
C
= 200 mA,
f
= 900 MHz,
Z
S
=
Z
L
= 50
Ω
1
G
4
-
5.5
2.2
-
3
GHz
pF
C
cb
C
ce
-
1.5
-
C
eb
-
14
-
F
-
1.7
-
dB
G
ma
-
12.5
-
|S
21e
|
2
-
6.5
-
dB
IP
3
-
33
-
dBm
2 1/2
ma
= |S
21
/S
12
| (k-(k -1) )
2007-04-20
3
BFG235
Total power dissipation
P
tot
=
ƒ
(T
S
)
Permissible Pulse Load
R
thJS
=
ƒ
(t
p
)
2200
mW
10
2
K/W
1800
1600
R
thJS
P
tot
10
1
1400
1200
1000
800
600
400
200
0
0
20
40
60
80
100
120
°C
150
10
0
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
10
-1 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
T
S
t
p
Permissible Pulse Load
P
totmax
/P
totDC
=
ƒ
(t
p
)
10
2
P
totmax
/P
totDC
-
10
1
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10
0 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
t
p
2007-04-20
4
Package SOT223
BFG235
Package Outline
A
6.5
±0.2
3
±0.1
4
1.6
±0.1
0.1 MAX.
15˚ MAX.
B
3.5
±0.2
1
2
3
7
±0.3
0.7
±0.1
4.6
0.25
M
A
2.3
0.5 MIN.
0.28
±0.04
0...10˚
Foot Print
0.25
M
B
3.5
1.4
1.2 1.1
Marking Layout (Example)
Manufacturer
2005, 24 CW
Date code (YYWW)
BCP52-16
Type code
Pin 1
Packing
Reel ø180 mm = 1.000 Pieces/Reel
Reel ø330 mm = 4.000 Pieces/Reel
1.4
4.8
8
0.3 MAX.
7.55
12
Pin 1
6.8
1.75
2007-04-20
5
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