Bulletin PD-20037 04/05
IRHD320CW40
HEXFRED
TM
Features
• Reduced RFI and EMI
• Reduced Snubbing
• Extensive Characterization of
Recovery Parameters
Ultrafast, Soft Recovery Diode
LUG
TERMINAL
ANODE 1
LUG
TERMINAL
ANODE 2
V
R
= 400V
V
F
(typ.) = 1V
I
F(AV)
= 320A
Q
rr
(typ.) = 420nC
I
RRM
(typ.) = 8.7A
t
rr
(typ.) = 45ns
BASE COMMON CATHODE
di
(rec)M
/dt (typ.) = 280A/µs
Description/ Applications
HEXFRED diodes are optimized to reduce losses and EMI/ RFI in high frequency power conditioning systems. An
extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies
the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber
in most applications. These devices are ideally suited for power converters, motors drives and other applications
where switching losses are significant portion of the total losses.
TM
Absolute Maximum Ratings
Parameters
V
R
I
F
@ T
C
= 25°C
I
F
@ T
C
= 100°C
I
FSM
E
AS
P
D
@ T
C
= 25°C
T
J
, T
STG
Cathode-to-Anode Voltage
Continuous Forward Current
Continuous Forward Current
Single Pulse Forward Current
Non-Repetitive Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Max
400
321
160
1200
1.4
625
250
- 55 to 150
Units
V
A
mJ
W
°C
P
D
@ T
C
= 100°C Maximum Power Dissipation
Case Styles
IRHD320CW40
TO-244
Limited by junction temperature
L = 100µH, duty cycle limited by max T
J
125°C
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1
IRHD320CW40
Bulletin PD-20037 04/05
Electrical Characteristics (per Leg) @ T
J
= 25°C (unless otherwise specified)
Parameters
V
BR
V
FM
Cathode Anode
Breakdown Voltage,
Max. Forward Voltage
Min Typ Max Units Test Conditions
400
-
-
-
-
-
V
V
V
V
µA
µA
pF
nH
I
R
= 100µA
I
F
= 160A
I
F
= 320A
I
F
= 160A, T
J
= 125°C
V
R
= V
R
Rated
T
J
= 125°C, V
R
= 320V
V
R
= 200V
See Fig. 3
See Fig. 2
See Fig. 1
1.10 1.35
1.30 1.55
1.00 1.20
2.0
3.0
370
5.0
12
16
500
-
I
RM
Max. Reverse Leakage Current
-
-
C
T
L
S
Junction Capacitance
Series Inductance
-
-
From top of terminal hole to mounting plane
.
Dynamic Recovery Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameters
t
rr
t
rr1
t
rr2
I
RRM1
I
RRM2
Q
rr1
Q
rr2
di
(rec)M
/d/t1
di
(rec)M
/d/t2
Reverse Recovery Charge
Peak Recovery Current
Reverse Recovery Time
Min Typ Max Units Test Conditions
-
-
-
-
-
-
-
-
-
45
90
290
8.7
18
-
140
440
20
30
nC
A
ns
I
F
= 1.0A, di
F
/dt = 200A/µs, V
R
= 30V
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
A/µs
T
J
= 25°C
T
J
= 25°C
See Fig. 7
See Fig. 6
See Fig. 5
I
F
= 160A
V
R
= 200V
di
F
/dt = 200A/µs
420 1100
2600 7000
300
280
-
-
See Fig. 8
Thermal - Mechanical Characteristics
Parameters
T
J
T
Stg
R
thJC
R
thCS
Wt
Max. Junction Temperature Range
Max. Storage Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Heatsink
Weight
Mounting Torque (*)
Mounting Torque Center Hole
Terminal Torque
Vertical Pull
2 inch Lever Pull
Per Leg
Per Module
Min
-
-
-
-
-
-
30 (3.4)
12 (1.4)
30 (3.4)
-
-
Typ
-
-
-
-
0.10
68 (2.4)
-
-
-
-
-
Max
- 55 to 150
- 55 to 150
0.24
0.12
-
-
40 (4.6)
18 (2.1)
40 4.6)
80
35
Units
°C
°C/W
K/W
g (oz)
lbf.in
(N.m)
lbf.in
(*) Mounting surface must be smooth, flat, free or burrs or other protrusions. Apply a thin even film or thermal grease to
mounting surface. Gradually tighten each mounting bolt in 5-10lbf.in steps until desired or maximum torque limits are reached
2
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IRHD320CW40
Bulletin PD-20037 04/05
100000
Reverse Current - I
R
(µA)
1000
10000
1000
100
10
1
0.1
0
T = 150°C
J
TJ = 125°C
Instantaneous Forward Current - I
F
(A)
100
T
J
= 150°C
T
J
= 125°C
T
J
= 25°C
TJ = 25°C
100
200
300
400
Reverse Voltage - V
R
(V)
Fig. 2 - Typical Reverse Current vs. Reverse
Voltage, (per Leg)
Junction Capacitance - C
T
(pF)
10
10000
A
T
J
= 25°C
1000
1
0.4
0.8
1.2
1.6
2.0
Forward Voltage Drop - V
FM
(V)
Fig. 1 - Maximum Forward Voltage Drop
vs. Instantaneous Forward Current (per Leg)
100
1
10
100
1000
Reverse Voltage - V
R
(V)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage, (per Leg)
1
Thermal Impedance - Z
thJC
(K/W)
0.1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
P
DM
t
0.01
1
t
2
Single Pulse
(Thermal Resistance)
0.0001
0.001
0.01
0.1
Notes:
1. Duty factor D = t / t
1 2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
1
10
100
0.001
0.00001
t
1
, Rectangular Pulse Duration (Seconds)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics, (per Leg)
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IRHD320CW40
Bulletin PD-20037 04/05
500
100
V
R
= 200V
T
J
= 125°C
T
J
= 25°C
400
V
R
= 200V
T
J
= 125°C
T
J
= 25°C
I
F
= 200A
I
F
= 200A
I
F
= 160A
t
rr
- (ns)
300
I
F
= 70A
I
IRRM
- (A)
I
F
= 160A
10
I
F
= 70A
200
100
0
100
di f /dt - (A/µs)
1000
1
100
di
f
/dt - (A/µs)
1000
Fig. 5 - Typical Reverse Recovery vs. di
f
/dt,
(per Leg)
Fig. 6 - Typical Recovery Current vs. di
f
/dt,
(per Leg)
6000
10000
V
R
= 200V
T
J
= 125°C
T
J
= 25°C
I
F
= 200A
4000
V
R
= 200V
T
J
= 125°C
T
J
= 25°C
Q
RR
- (nC)
I
F
= 160A
I
F
= 70A
di(rec)M/dt - (A/µs)
I
F
= 70A
1000
I
F
= 160A
2000
I
F
= 200A
0
100
di
f
/dt - (A/µs)
1000
100
100
di
f
/dt - (A/µs)
1000
Fig. 7 - Typical Stored Charge vs. di
f
/dt,
(per Leg)
Fig. 8 - Typical di
(rec)M
/dt vs. di
f
/dt,
(per Leg)
4
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IRHD320CW40
Bulletin PD-20037 04/05
Reverse Recovery Circuit
V
R
= 200V
0.01
Ω
L = 70µH
D.U.T.
di
F
/dt
dif/dt
D
G
IRFP250
S
ADJUST
Fig. 9- Reverse Recovery Parameter Test Circuit
3
I
F
0
t
rr
t
a
t
b
4
Q
rr
2
I
RRM
0.5 I
RRM
di(rec)M/dt
0.75 I
RRM
5
1
/dt
di
f
F
/dt
1. di
F
/dt - Rate of change of current through zero
crossing
2. I
RRM
- Peak reverse recovery current
3. t
rr
- Reverse recovery time measured from zero
crossing point of negative going I
F
to point where
a line passing through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current
4. Q
rr
- Area under curve defined by t
rr
and I
RRM
t
rr
x I
RRM
Q
rr
=
2
5. di
(rec) M
/ dt - Peak rate of change of
current during t
b
portion of t
rr
Fig. 10 - Reverse Recovery Waveform and Definitions
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